Sample & Buy Product Folder Technical Documents Support & Community Tools & Software bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 bq7716xy Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries with External Delay Capacitor 1 Features 3 Description • • • • The bq7716xy device family provides an overvoltage monitor and protector for Li-Ion battery pack systems. Each cell is monitored independently for an overvoltage condition. For quicker production-line testing, the bq7716xy device provides a Customer Test Mode with greatly reduced delay time. 1 • • • 2-, 3-, and 4-Series Cell Overvoltage Protection External Capacitor-Programmed Delay Timer Fixed OVP Threshold High-Accuracy Overvoltage Protection: ±10 mV Low Power Consumption ICC ≈ 1 µA (VCELL(ALL) < VPROTECT) Low Leakage Current Per Cell Input < 100 nA Small Package Footprint – 8-pin WSON (3.00 mm × 4.00 mm) In the bq7716xy device, an external delay timer is initiated upon detection of an overvoltage condition on any cell. Upon expiration of the delay timer, the output is triggered into its active state (either high or low, depending on the configuration). The external delay timer feature also includes the ability to detect an open or shorted delay capacitor on the CD pin, which will similarly trigger the output driver in an overvoltage condition. 2 Applications • • • Power Tools UPS Battery Backup Light Electric Vehicles – eBike – eScooter – Pedal Assist Bicycles Table 1. Device Information Table(1) PART NUMBER PACKAGE BODY SIZE (NOM) bq771600 WSON (8) 3.00 mm × 4.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet and the Device Comparison Table. 4 Simplified Schematic C VD VDD OUT R VD V4 CD V3 VSS V2 V1 CCD R IN CIN Cell 2 R IN Cell 1 CIN 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA. bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Simplified Schematic............................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 1 2 3 4 7.1 7.2 7.3 7.4 7.5 7.6 4 4 4 4 5 7 Absolute Maximum Ratings ...................................... ESD Ratings ............................................................ Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 8 8.1 Overview ................................................................... 8 8.2 Functional Block Diagram ......................................... 8 8.3 Feature Description................................................... 8 8.4 Device Functional Modes........................................ 10 9 Application and Implementation ........................ 12 9.1 Application Information............................................ 12 9.2 Typical Application .................................................. 13 10 Power Supply Recommendations ..................... 14 11 Layout................................................................... 14 11.1 Layout Guidelines ................................................. 14 11.2 Layout Example .................................................... 14 12 Device and Documentation Support ................. 15 12.1 12.2 12.3 12.4 12.5 12.6 Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Export Control Notice............................................ Glossary ................................................................ 15 15 15 15 15 15 13 Mechanical, Packaging, and Orderable Information ........................................................... 16 5 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (August 2014) to Revision D Page • Changed QFN to WSON ....................................................................................................................................................... 1 • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 • Changed the bq771605 to Production Data ........................................................................................................................... 3 • Added table note 2, which was hidden inadvertently ............................................................................................................. 4 • Moved Pin Details to Feature Description section ................................................................................................................. 8 • Moved from Application Information section to Design Requirements section ................................................................... 13 Changes from Revision B (June 2014) to Revision C • Page Added the bq771612 device to Production Data.................................................................................................................... 3 Changes from Revision A (September 2013) to Revision B Page • Changed the data sheet format .............................................................................................................................................. 1 • Added the bq771611 device to Production Data.................................................................................................................... 3 Changes from Original (December 2012) to Revision A • 2 Page Added the bq771604 device to Production Data.................................................................................................................... 3 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 www.ti.com SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 Table 2. Device Comparison Table PART NUMBER OVP (V) OV HYSTERESIS (V) OUTPUT DRIVE TAPE AND REEL (LARGE) TAPE AND REEL (SMALL) bq771600 4.3 0.3 CMOS Active High bq771600DPJR bq771600DPJT bq771601 4.225 0.05 CMOS Active High bq771601DPJR bq771601DPJT bq771602 4.225 0.05 NCH Active Low, Open Drain bq771602DPJR bq771602DPJT bq771603 (1) 4.325 0.05 NCH Active Low, Open Drain bq771603DPJR bq771603DPJT bq771604 4.2 0.05 CMOS Active High bq771604DPJR bq771604DPJT bq771605 3.85 0.25 NCH Active Low bq771605DPJR bq771605DPJT bq771607 (1) 4.2 0.25 CMOS Active High bq771607DPJR bq771607DPJT bq771608 (1) 4.225 0.25 CMOS Active High bq771608DPJR bq771608DPJT bq771609 (1) 4.25 0.05 CMOS Active High bq771609DPJR bq771609DPJT bq771610 (1) 4.250 0.25 CMOS Active High bq771610DPJR bq771610DPJT bq771611 4.35 0.3 CMOS Active High bq771611DPJR bq771611DPJT bq771612 3.9 0.3 CMOS Active High bq771612DPJR bq771612DPJT bq771613 (1) 4.2 0.05 NCH Active Low bq771613DPJR bq771613DPJT bq771614 (1) 4.225 0.25 NCH Active Low bq771614DPJR bq771614DPJT bq771615 (1) 4.25 0.05 NCH Active Low bq771615DPJR bq771615DPJT 0–0.3 CMOS Active High or NCH Active Low, Open Drain bq7716xyTBD bq7716xyTBD bq7716xy future options (2) (1) (2) 3.85–4.65 Product Preview only. Contact TI. 6 Pin Configuration and Functions DPJ Package 8-Pin WSON Top View VDD 1 8 OUT V4 2 7 CD V3 3 6 VSS V2 4 5 V1 Pin Functions PIN (1) TYPE DESCRIPTION NAME NO. I/O (1) CD 7 I/O External capacitor connection for delay timer OUT 8 OA Output drive for overvoltage fault signal VDD 1 P Power supply VSS 6 P Electrically connected to IC ground and negative terminal of the lowest cell in the stack V1 5 I Sense input for positive voltage of the lowest cell in the stack V2 4 I Sense input for positive voltage of the second cell from the bottom of the stack V3 3 I Sense input for positive voltage of the third cell from the bottom of the stack V4 2 I Sense input for positive voltage of the fourth cell from the bottom of the stack IA = Input Analog, OA = Output Analog, P = Power Connection Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 3 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) Supply voltage range (2) Input voltage range (2) Output voltage range (2) MIN MAX UNIT VDD–VSS –0.3 30 V V4–V3, V3–V2, V2–V1, V1–VSS, or CD–VSS –0.3 30 V OUT–VSS –0.3 30 V 110 °C Continuous total power dissipation, PTOT See package dissipation rating. Functional temperature –40 Lead temperature (soldering, 10 s), TSOLDER 300 Storage temperature, Tstg –65 (1) (2) °C 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Absolute maximum ratings for input voltage range, output voltage range, and supply voltage are assured by design and not tested in production. 7.2 ESD Ratings VALUE VESD Rating (1) (2) Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted) MIN VDD (1) NOM MAX UNIT Supply voltage 3 20 V V4–V3, V3–V2, V2–V1, V1–VSS, or CD–VSS Input voltage range 0 5 V TA Operating ambient temperature range –40 110 °C (1) See Typical Application. 7.4 Thermal Information bq7716xy THERMAL METRIC (1) DPJ (WSON) UNIT 8 PINS RθJA Junction-to-ambient thermal resistance 56.6 °C/W RθJC(top) Junction-to-case(top) thermal resistance 56.4 °C/W RθJB Junction-to-board thermal resistance 30.6 °C/W ψJT Junction-to-top characterization parameter 1.0 °C/W ψJB Junction-to-board characterization parameter 37.8 °C/W RθJC(bot) Junction-to-case(bottom) thermal resistance 11.3 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 www.ti.com SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 7.5 Electrical Characteristics Typical values stated where TA = 25°C and VDD = 14.4 V, MIN/MAX values stated where TA = –40°C to +110°C and VDD = 3 V to 20 V (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOLTAGE PROTECTION THRESHOLD VCx V(PROTECT) Overvoltage Detection VOV bq771600 4.300 V bq771601 4.225 V bq771602 4.225 V bq771603 (1) 4.325 V bq771604 4.200 V bq771605 3.850 V bq771607 (1) 4.200 V (1) 4.225 V bq771609 (1) 4.250 V bq771610 (1) 4.250 V bq771611 4.350 V bq771612 3.900 V bq771613 (1) 4.200 V bq771614 (1) 4.225 V bq771608 bq771615 VHYS OV Detection Hysteresis VOADRIFT OV Detection Accuracy Across Temperature V 250 300 400 mV bq771601 25 50 75 mV bq771602 25 50 75 mV bq771603 (1) 25 50 75 mV bq771604 25 50 75 mV bq771605 200 250 300 mV bq771607 (1) 200 250 300 mV bq771608 (1) 200 250 300 mV bq771609 (1) 25 50 75 mV (1) 200 250 300 mV bq771611 250 300 400 mV bq771612 250 300 400 mV (1) 25 50 75 mV bq771614 (1) 200 250 300 mV bq771615 (1) 25 50 75 mV bq771613 OV Detection Accuracy 4.250 bq771600 bq771610 VOA (1) TA = 25°C –10 10 mV TA = –40°C –40 44 mV TA = 0°C –20 20 mV TA = 60°C –24 24 mV TA = 110°C –54 54 mV 2 µA 0.1 µA SUPPLY AND LEAKAGE CURRENT ICC Supply Current (V4–V3) = (V3–V2) = (V2–V1) = (V1–VSS) = 4.0 V (See Figure 10.) IIN Input Current at Vx Pins (V4–V3) = (V3–V2) = (V2–V1) = (V1–VSS) = 4.0 V (See Figure 10.) (1) 1 –0.1 Future option. Contact TI. Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 5 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com Electrical Characteristics (continued) Typical values stated where TA = 25°C and VDD = 14.4 V, MIN/MAX values stated where TA = –40°C to +110°C and VDD = 3 V to 20 V (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OUTPUT DRIVE OUT, CMOS ACTIVE HIGH VERSIONS ONLY (V4–V3), (V3–V2), (V2–V1), or (V1–VSS) > VOV, VDD = 14.4 V, IOH = 100 µA Output Drive Voltage, Active High VOUT1 6 If three of four cells are short circuited, only one cell remains powered and > VOV, VDD = Vx (cell voltage), IOH = 100 µA VDD – 0.3 (V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV, VDD = 14.4 V, IOL = 100 µA measured into OUT pin IOUTH1 OUT Source Current (V4–V3), (V3–V2), (V2–V1), or (V1–VSS) > VOV, VDD (During OV) = 14.4 V, OUT = 0 V. Measured out of OUT pin IOUTL1 OUT Sink Current (No OV) (V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV, VDD = 14.4 V, OUT = VDD. Measured into OUT pin V 250 0.5 V 400 mV 4.5 mA 14 mA 400 mV 14 mA 100 nA OUTPUT DRIVE OUT, NCH OPEN DRAIN ACTIVE LOW VERSIONS ONLY VOUT2 Output Drive Voltage, Active Low (V4–V3), (V3–V2), (V2–V1), or (V1–VSS) > VOV, VDD = 14.4 V, IOL = 100 µA measured into OUT pin IOUTH2 OUT Sink Current (During OV) (V4–V3), (V3–V2), (V2–V1), or (V1–VSS) > VOV, VDD = 14.4 V. OUT = VDD. Measured into OUT pin IOUTLK OUT Pin Leakage (V4–V3), (V3–V2), (V2–V1), and (V1–VSS) < VOV, VDD = 14.4 V, OUT = VDD. Measured out of OUT pin 250 0.5 DELAY TIMER CCD = 0.1 µF (For capacitor sizing, see .) tCD OV Delay Time VCD CD Fault Detection External Comparator The CD pin will first be quickly charged to this value Threshold, Initial before being discharged back to VSS. Charge Value tCHGDELAY CD Charging Delay OVP to OUT delay with CD shorted to ground ICHG OV Detection Charging Current CD pin fast charging current from VSS to VCD to begin delay countdown 300 µA IDSG OV Detection Discharging Current CD pin discharging current from VDELAY to VSS 100 nA 6 Submit Documentation Feedback 1 1.5 2 1.5 20 s V 170 ms Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 www.ti.com SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 7.6 Typical Characteristics 4.40 0.316 Mean Min Max 4.39 4.38 0.315 4.36 VHYS (V) VOUT (V) 4.37 4.35 4.34 4.33 0.314 0.313 4.32 4.31 4.30 −50 −25 0 25 50 Temperature (°C) 75 100 125 0.312 −50 −25 0 G001 Figure 2. Overvoltage Threshold (OVT) vs. Temperature 25 50 Temperature (°C) 75 100 125 G002 Figure 3. Hysteresis VHYS vs. Temperature 1.8 1.6 1.5 1.6 1.4 1.4 1.2 ICELL (µA) IDD (µA) 1.3 1.1 1.0 1.2 1.0 0.9 0.8 0.8 0.7 0.6 −50 −25 0 25 50 Temperature (°C) 75 100 125 0.6 −50 Figure 4. IDD Current Consumption vs. Temperature at VDD = 16 V 0 25 50 Temperature (°C) 75 100 125 G004 Figure 5. ICELL vs. Temperature at VCELL= 9.2 V −3.68 8 −3.70 7 −3.72 6 −3.74 −3.76 VOUT (V) IOUT (mA) −25 G003 −3.78 −3.80 −3.82 5 4 3 2 −3.84 1 −3.86 −3.88 −50 −25 0 25 50 Temperature (°C) 75 100 Figure 6. Output Current IOUT vs. Temperature Copyright © 2012–2015, Texas Instruments Incorporated 125 G005 0 0 5 10 15 VDD (V) 20 25 30 G006 Figure 7. VOUT vs. VDD Submit Documentation Feedback Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 7 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com 8 Detailed Description 8.1 Overview In the bq7716xy family of devices for overvoltage protection, each cell is monitored independently and an external delay timer is initiated if an overvoltage condition is detected when any cell voltage is higher than the protection voltage threshold, VOV. After the delay time expires, the OUT pin is inserted. For quicker production-line testing, the device provides a Customer Test Mode with greatly reduced delay time. 8.2 Functional Block Diagram PACK+ R VD C VD VDD VC4 CIN RIN VC3 CIN RIN VC2 Sensing Circuit RIN CIN RIN VOV Enable Delay Charging/ Active Discharging Circuit OUT VC1 CIN VSS CD CCD PACK– 8.3 Feature Description In the bq7716xy device, each cell is monitored independently. Overvoltage is detected by comparing the actual cell voltage to a protection voltage reference, VOV. If any cell voltage exceeds the programmed OV value, a timer circuit is activated. This timer circuit charges the CD pin to a nominal value, then slowly discharges it with a fixed current back down to VSS. When the CD pin falls below a nominal threshold near VSS, the OUT terminal goes from inactive to active state. Additionally, a timeout detection circuit checks to ensure that the CD pin successfully begins charging to above VSS and subsequently drops back down to VSS, and if a timeout error is detected in either direction, it will similarly trigger the OUT pin to become active. See Figure 8 for reference. For an NCH Open Drain Active Low configuration, the OUT pin pulls down to VSS when active (OV present), and is high impedance when inactive (no OV). 8 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 www.ti.com SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 Cell Voltage (V) (V4–V3, V3–V2, V2–V1, V1–VSS) Feature Description (continued) VOV VOV –VHYS t DELAY OUT (V) Figure 8. Timing for Overvoltage Sensing Figure 9 shows an overview of the behavior of the CD pin during an OV sequence. Fault condition present Fault response becomes active VCD V(CD) t CHGDELAY t CD ICHG I(CD) IDSG VOUT1 V(OUT) Note: Active High OUT version shown Figure 9. CD Pin Mechanism Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 9 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com Feature Description (continued) 8.3.1 Sense Positive Input for Vx This is an input to sense each single battery cell voltage. A series resistor and a capacitor across the cell for each input is required for noise filtering and stable voltage monitoring. 8.3.2 Output Drive, OUT This terminal serves as the fault signal output, and may be ordered in either active HIGH or LOW options. 8.3.3 Supply Input, VDD This terminal is the unregulated input power source for the IC. A series resistor is connected to limit the current, and a capacitor is connected to ground for noise filtering. 8.3.4 External Delay Capacitor, CD This terminal is connected to an external capacitor that is used for setting the delay timer during an overvoltage fault event. The CD pin includes a timeout detection circuit to ensure that the output drives active even with a shorted or open capacitor during an overvoltage event. The capacitor connected on the CD pin rapidly charges to a voltage if any one of the cell inputs exceeds the OV threshold. Then the delay circuit gradually discharges the capacitor on the CD pin. Once this capacitor discharges below a set voltage, the OUT transitions from an inactive to active state. To calculate the delay, use the following equation: tCD (s) = K × CCD (µF), where K = 10 to 20 range. (1) Example: If CCD= 0.1 µF (typical), then the delay timer range is tCD (s) = 10 × 0.1 = 1 s (Minimum) tCD (s) = 20 × 0.1 = 2 s (Maximum) NOTE The tolerance on the capacitor used for CCD increases the range of the tCD timer. 8.4 Device Functional Modes 8.4.1 NORMAL Mode When all of the cell voltages are below the overvoltage threshold, VOV, the device operates in NORMAL mode. The device monitors the differential cell voltages connected across (V1–VSS), (V2–V1), (V3–V2), and (V4–V3). The OUT pin is inactive and if configured: • Active high is low • Active low is being externally pulled up and is an open drain 8.4.2 OVERVOLTAGE Mode OVERVOLTAGE mode is detected if any of the cell voltages exceeds the overvoltage threshold, VOV for configured OV delay time. The OUT pin is activated after a delay time set by the capacitance in the CD pin. The OUT pin will either pull high internally, if configured as active high, or will be pulled low internally, if configured as active low. When all of the cell voltages fall below the (VOV–VHYS), the device returns to NORMAL mode 8.4.3 Customer Test Mode It is possible to reduce test time for checking the overvoltage function by simply shorting the external CD capacitor to VSS. In this case, the OV delay would be reduced to the t(CHGDELAY) value, which has a maximum of 170 ms. 10 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 www.ti.com SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 Device Functional Modes (continued) CAUTION Avoid exceeding any Absolute Maximum Voltages on any pins when placing the part into Customer Test Mode. Also avoid exceeding Absolute Maximum Voltages for the individual cell voltages (V4–V3), (V3–V2), (V2–V1), and (V1–VSS). Stressing the pins beyond the rated limits may cause permanent damage to the device. Figure 10 shows the timing for the Customer Test Mode. OV Condition V(VCELL) ≤ 170 ms V(OUT) CD pin held low V(CD) Figure 10. Timing for Customer Test Mode Figure 11 shows the measurement for current consumption for the product for both VDD and Vx. I CC IIN VDD OUT V4 CD IIN V3 VSS IIN V2 V1 Cell4 Cell3 Cell2 IIN Cell1 Figure 11. Configuration for IC Current Consumption Test Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 11 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information Figure 12 shows each external component. CVD VDD OUT RVD Cell 4 R IN C IN V4 CD CCD Cell 3 R IN V3 VSS V2 V1 C IN R IN C IN Cell 2 Cell1 R IN C IN Figure 12. Application Configuration NOTE In the case of an Open Drain Active Low configuration, an external pull-up resistor is required on the OUT terminal. Changes to the ranges stated in Table 3 will impact the accuracy of the cell measurements. NOTE The device is calibrated using an RIN value = 1 kΩ. Using a value other than this recommended value changes the accuracy of the cell voltage measurements and VOV trigger level. 12 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 www.ti.com SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 9.2 Typical Application C VD CVD VDD OUT OUT VDD RVD R VD V4 CD V4 CD V3 VSS V2 V1 CCD V3 CCD VSS RIN Cell 3 V1 V2 RIN R IN Cell 2 R IN Cell 1 CIN CIN Cell 2 CIN Cell 1 CIN RIN Figure 13. 2-Series Cell Configuration with CapacitorProgrammed Delay CIN Figure 14. 3-Series Cell Configuration with CapacitorProgrammed Delay NOTE In these application examples of 2 s and 3 s, an external pull-up resistor is required on the OUT terminal to configure for an Open Drain Active Low operation. 9.2.1 Design Requirements Changes to the ranges stated in Table 3 will impact the accuracy of the cell measurements. Table 3. Design Parameters PARAMETER EXTERNAL COMPONENT MIN NOM MAX 1000 1100 Ω 0.1 µF Voltage monitor filter resistance RIN 900 Voltage monitor filter capacitance CIN 0.01 100 Supply voltage filter resistance RVD Supply voltage filter capacitance CVD 0.1 CD external delay capacitance CCD 0.1 OUT Open drain version pull-up resistance to PACK+ ROUT 100k UNIT 1K Ω µF 1 µF Ω 9.2.2 Detailed Design Procedure 1. Determine the number of cells in series. The device supports a 2-S to 4-S cell configuration. For 2S and 3S, the top unused pin(s) should be shorted as shown in Figure 13 and Figure 14. 2. Determine the overvoltage protection delay. Follow the calculation example described in External Delay Capacitor, CD . Select the correct capacitor to connect to the CD pin. 3. Follow the application schematic to connect the device. If the OUT pin is configured to open drain, an external pull-up resistor should be used. Refer to the Out Sink Current specification, IOUTH2 to ensure a proper pull-up resistor value is used, so that the OUT pin sink current is able to pull down the pin during OV condition. Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 13 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com 9.2.3 Application Curves 0.316 1.6 1.5 1.4 1.3 IDD (µA) VHYS (V) 0.315 0.314 1.2 1.1 1.0 0.9 0.313 0.8 0.7 0.312 −50 −25 0 25 50 Temperature (°C) 75 100 0.6 −50 125 −25 G002 Figure 15. Hysteresis VHYS vs. Temperature 0 25 50 Temperature (°C) 75 100 125 G003 Figure 16. IDD Current Consumption vs. Temperature at VDD = 16 V 10 Power Supply Recommendations The maximum power of this device is 20 V on VDD. 11 Layout 11.1 Layout Guidelines 1. Ensure the RC filters for the Vx pins and VDD pin are placed as close as possible to the target terminal, reducing the tracing loop area. 2. The capacitor for CD pin should be placed close to the IC terminals. 11.2 Layout Example Place the RC filters close to the device terminals Power Trace Line Pack + VDD OUT V4 CD V3 VSS OUT Pack - PWPD VCELL3 V2 V1 VCELL2 VCELL1 Place close to the CD pin Figure 17. Layout 14 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 www.ti.com SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 12 Device and Documentation Support 12.1 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 4. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY bq771600 Click here Click here Click here Click here Click here bq771601 Click here Click here Click here Click here Click here bq771602 Click here Click here Click here Click here Click here bq771604 Click here Click here Click here Click here Click here bq771605 Click here Click here Click here Click here Click here bq771611 Click here Click here Click here Click here Click here bq771612 Click here Click here Click here Click here Click here 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 12.5 Export Control Notice Recipient agrees to not knowingly export or re-export, directly or indirectly, any product or technical data (as defined by the U.S., EU, and other Export Administration Regulations) including software, or any controlled product restricted by other applicable national regulations, received from disclosing party under nondisclosure obligations (if any), or any direct product of such technology, to any destination to which such export or re-export is restricted or prohibited by U.S. or other applicable laws, without obtaining prior authorization from U.S. Department of Commerce and other competent Government authorities to the extent required by those laws. 12.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 15 bq771600, bq771601, bq771602 bq771604, bq771605, bq771611, bq771612 SLUSAX0D – DECEMBER 2012 – REVISED JULY 2015 www.ti.com 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 16 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated Product Folder Links: bq771600 bq771601 bq771602 bq771604 bq771605 bq771611 bq771612 PACKAGE OPTION ADDENDUM www.ti.com 7-Aug-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) BQ771600DPJR ACTIVE WSON DPJ 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 771600 BQ771600DPJT ACTIVE WSON DPJ 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 771600 BQ771601DPJR ACTIVE WSON DPJ 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 771601 BQ771601DPJT ACTIVE WSON DPJ 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 771601 BQ771602DPJR ACTIVE WSON DPJ 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 771602 BQ771602DPJT ACTIVE WSON DPJ 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 771602 BQ771604DPJR ACTIVE WSON DPJ 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771604 BQ771604DPJT ACTIVE WSON DPJ 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771604 BQ771605DPJR ACTIVE WSON DPJ 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771605 BQ771605DPJT ACTIVE WSON DPJ 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771605 BQ771611DPJR ACTIVE WSON DPJ 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771611 BQ771611DPJT ACTIVE WSON DPJ 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771611 BQ771612DPJR ACTIVE WSON DPJ 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771612 BQ771612DPJT ACTIVE WSON DPJ 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 771612 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 7-Aug-2015 (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing BQ771600DPJR WSON DPJ 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771600DPJT WSON DPJ 8 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771601DPJR WSON DPJ 8 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771601DPJT WSON DPJ 8 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771602DPJR WSON DPJ 8 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771602DPJT WSON DPJ 8 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771604DPJR WSON DPJ 8 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771604DPJT WSON DPJ 8 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771605DPJR WSON DPJ 8 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771605DPJT WSON DPJ 8 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771611DPJR WSON DPJ 8 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771611DPJT WSON DPJ 8 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771612DPJR WSON DPJ 8 3000 330.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 BQ771612DPJT WSON DPJ 8 250 180.0 12.4 3.3 4.3 1.1 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 3-Aug-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ771600DPJR WSON DPJ 8 3000 367.0 367.0 35.0 BQ771600DPJT WSON DPJ 8 250 210.0 185.0 35.0 BQ771601DPJR WSON DPJ 8 3000 367.0 367.0 35.0 BQ771601DPJT WSON DPJ 8 250 210.0 185.0 35.0 BQ771602DPJR WSON DPJ 8 3000 367.0 367.0 35.0 BQ771602DPJT WSON DPJ 8 250 210.0 185.0 35.0 BQ771604DPJR WSON DPJ 8 3000 367.0 367.0 35.0 BQ771604DPJT WSON DPJ 8 250 210.0 185.0 35.0 BQ771605DPJR WSON DPJ 8 3000 367.0 367.0 35.0 BQ771605DPJT WSON DPJ 8 250 210.0 185.0 35.0 BQ771611DPJR WSON DPJ 8 3000 367.0 367.0 35.0 BQ771611DPJT WSON DPJ 8 250 210.0 185.0 35.0 BQ771612DPJR WSON DPJ 8 3000 367.0 367.0 35.0 BQ771612DPJT WSON DPJ 8 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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