MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation 1 2 3 1 2 • Solder dip 260 °C, 40 s 3 MBRF10H150CT MBR10H150CT • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TO-262AA TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications. 1 3 2 MECHANICAL DATA SB10H150CT-1 PIN 1 PIN 2 PIN 3 CASE Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating IF(AV) 2x5A VRRM 150 V Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test IFSM 160 A Mounting Torque: 10 in-lbs maximum VF 0.72 V Polarity: As marked TJ 175 °C PRIMARY CHARACTERISTICS MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR10H150CT UNIT Maximum repetitive peak reverse voltage VRRM 150 V Working peak reverse voltage VRWM 150 V VDC 150 V IF(AV) 10 5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 160 A Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) ERSM 10 mJ EAS 11.25 mJ Maximum DC blocking voltage Maximum average forward rectified current (Fig. 1) total device per diode Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min Document Number: 88779 Revision: 18-Apr-08 dV/dt 10 000 V/µs TJ, TSTG - 65 to + 175 °C VAC 1500 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode (1) IF = 5.0 A TJ = 25 °C IF = 5.0 A TJ = 125 °C IF = 10 A TJ = 25 °C IF = 10 A TJ = 125 °C SYMBOL UNIT 0.88 0.72 VF V 0.96 0.80 TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage (1) VALUE 5.0 IR TJ = 125 °C µA mA 1.0 Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT RθJC 2.4 4.5 2.4 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR10H150CT-E3/45 2.06 45 50/tube Tube ITO-220AB MBRF10H150CT-E3/45 2.20 45 50/tube Tube TO-262AA SB10H150CT-1E3/45 1.58 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 12 200 Peak Forward Surge Current (A) Average Forward Current (A) MBR, MBRB 10 MBRF 8 6 4 2 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve (Total) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88779 Revision: 18-Apr-08 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 125 °C TJ = 75 °C 1 1000 100 TJ = 25 °C 10 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 000 TJ = 175 °C 1000 TJ = 125 °C 100 10 TJ = 75 °C 1 TJ = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 10 MBRF MBR, MBRB 1 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88779 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. ITO-220AB 0.185 (4.70) 0.169 (4.30) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.408 (10.36) 0.392 (9.96) 0.055 (1.40) 0.049 (1.25) 1.29 (3.28) DIA. 1.21 (3.08) 0.138 (3.50) 0.122 (3.10) 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331 (8.40) TYP. 1 PIN 2 3 0.370 (9.40) 0.354 (9.00) 0.630 (16.00) 0.614 (15.60) 1.161 (29.48) 1.106 (28.08) 0.118 (3.00) TYP. 1 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. PIN 2 0.264 (6.70) 0.248 (6.50) 0.320 (8.12) 0.304 (7.72) 0.633 (16.07) 0.601 (15.67) 3 0.117 (2.96) 0.101 (2.56) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. 0.270 (6.88) 0.255 (6.48) 0.638 (16.20) 0.598 (15.20) 0.634 (16.10) 0.618 (15.70) 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 0.396 (10.05) 0.372 (9.45) 0.024 (0.60) 0.018 (0.45) 0.039 (1.00) 0.024 (0.60) 0.058 (1.47) MAX. 0.100 (2.54) TYP. 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) TO-262AA 0.398 (10.10) 0.382 (9.70) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.039 (1.00) 0.055 (1.40) 0.049 (1.25) K 0.370 (9.40) 0.354 (9.00) 1 PIN 2 3 0.425 (10.80) 0.393 (10.00) 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. www.vishay.com 4 0.405 (10.28) 0.389 (9.88) 0.062 (1.57) 0.054 (1.37) 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) TYP. For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88779 Revision: 18-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1