EPA680A/EPA680AV High Efficiency Heterojunction Power FET UPDATED 05/02/2006 1320 60 FEATURES • • • • • • D +36.5dBm TYPICAL OUTPUT POWER 6.5dB TYPICAL POWER GAIN FOR EPA680A AND 8.0dB FOR EPA680AV AT 12GHz 0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY AND RELIABILITY Idss SORTED IN 160mA PER BIN RANGE 231 D 440 100 40 G G 135 G G 50 201 Chip Thickness: 45 ± 15 microns : Via Hole No Via Hole For EPA680A All Dimensions In Microns Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EPA680A SYMBOLS EPA680AV PARAMETERS/TEST CONDITIONS UNIT MIN TYP 35.5 5.5 MAX MIN TYP 36.5 35.5 36.5 dBm 6.5 7 8 dB 36 % PAE Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 1250 2050 Gm Transconductance Vds=3V, Vgs=0V 1360 2150 Vp Pinch-off Voltage Vds=3V,Ids=20mA BVgd Drain Breakdown Voltage Igd=6.8mA -13 -15 -13 -15 BVgs Source Breakdown Voltage Igs=6.8mA -7 -14 -7 -14 P1dB G1dB Rth 48 D D 33 -1.0 Thermal Resistance (Au-Sn Eutectic Attach) 2690 1250 2050 1360 2150 -2.5 -1.0 6 MAX 2690 mA mS -2.5 V V V o 5.5 C/W MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation EPA680A EPA680AV ABSOLUTE1 CONTINUOUS2 ABSOLUTE1 CONTINUOUS2 12V -5V 30.6 mA -5.1 mA 33.5 dBm o 175 C o -65/175 C 23 W 8V -3V 10.2 mA -1.7 mA @ 3dB Compression 175oC -65/175oC 23 W 12V -5V 30.6 mA -5.1 mA 33.5 dBm 175oC -65/175oC 25 W 8V -3V 10.2 mA -1.7 mA @ 3dB Compression 175oC -65/175oC 25 W 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 3 Revised May 2006 EPA680A/EPA680AV High Efficiency Heterojunction Power FET UPDATED 05/02/2006 S-PARAMETERS EPA680A Freq S11 8V, 1/2 Idss S21 S12 S22 (GHz) Mag Ang Mag Ang Mag Ang Mag Ang 1 0.943 -164.0 7.210 90.7 0.009 21.7 0.681 -174.6 2 0.944 -173.1 3.626 78.2 0.011 23.5 0.697 -174.5 3 0.945 -176.8 2.393 68.8 0.011 26.1 0.711 -173.2 4 0.942 -179.5 1.770 60.1 0.013 36.0 0.727 -172.8 5 0.941 178.9 1.441 52.6 0.014 41.6 0.745 -172.3 6 0.940 176.6 1.133 44.8 0.015 45.8 0.765 -172.6 7 0.944 174.7 0.921 38.3 0.016 48.4 0.798 -172.8 8 0.944 173.0 0.761 32.0 0.015 47.5 0.817 -173.6 9 0.942 171.1 0.638 25.9 0.016 53.6 0.840 -174.0 10 0.945 169.2 0.550 20.4 0.017 54.5 0.857 -175.2 11 0.947 167.6 0.477 15.2 0.018 52.5 0.870 -175.8 12 0.946 166.5 0.422 10.5 0.020 52.9 0.885 -177.2 13 0.946 165.3 0.376 5.9 0.021 46.6 0.887 -178.3 14 0.948 165.0 0.339 1.6 0.023 53.1 0.904 -179.8 15 0.939 164.4 0.309 -2.1 0.024 47.6 0.900 179.5 16 0.945 164.5 0.285 -5.0 0.022 45.8 0.914 178.6 17 0.938 164.5 0.262 -9.1 0.024 45.2 0.920 177.4 18 0.931 164.8 0.240 -11.9 0.028 41.0 0.915 175.8 19 0.937 164.8 0.223 -14.8 0.028 40.1 0.926 175.8 20 0.931 165.3 0.211 -16.4 0.033 41.9 0.936 175.3 21 0.919 163.0 0.195 -20.6 0.036 39.0 0.948 175.1 22 0.924 161.1 0.185 -23.2 0.038 40.6 0.935 176.8 23 0.907 159.4 0.180 -26.0 0.043 35.9 0.949 175.1 24 0.908 156.4 0.173 -29.9 0.049 31.5 0.937 175.2 25 0.898 155.1 0.169 -33.5 0.056 29.0 0.944 173.6 26 0.888 152.3 0.168 -37.4 0.066 24.1 0.939 172.1 Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each; 10 source wires, 7 mils each. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 3 Revised May 2006 EPA680A/EPA680AV High Efficiency Heterojunction Power FET UPDATED 05/02/2006 S-PARAMETERS EPA680AV Freq (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 Mag 0.962 0.965 0.968 0.971 0.970 0.974 0.974 0.976 0.981 0.978 0.975 0.984 0.984 0.980 0.991 0.973 0.993 0.981 0.986 0.989 0.981 0.986 0.987 0.988 0.980 0.961 8V, 1/2 Idss S21 Ang -166.0 -174.4 -177.9 180.0 179.9 178.3 177.2 175.6 174.6 173.2 171.9 170.5 170.9 169.1 169.7 168.6 168.0 167.8 166.4 165.4 159.4 159.1 158.3 158.7 158.9 159.2 Mag 7.084 3.544 2.340 1.727 1.334 1.089 0.918 0.785 0.684 0.598 0.523 0.463 0.407 0.349 0.320 0.281 0.256 0.226 0.210 0.196 0.192 0.172 0.160 0.142 0.126 0.114 S12 Ang 90.5 79.4 70.9 62.9 56.3 49.5 43.0 37.5 31.2 25.1 20.9 15.4 10.7 6.4 3.4 -1.3 -5.1 -8.3 -11.8 -14.6 -18.9 -22.8 -25.4 -28.2 -28.7 -30.3 Mag 0.011 0.012 0.011 0.013 0.012 0.013 0.013 0.015 0.014 0.013 0.018 0.016 0.017 0.019 0.017 0.017 0.017 0.017 0.018 0.020 0.022 0.021 0.022 0.024 0.022 0.027 S22 Ang 16.4 17.2 25.3 32.7 38.2 43.4 53.8 55.3 55.3 58.5 62.1 62.8 59.7 62.2 58.8 53.4 59.0 50.7 51.7 45.1 42.2 45.3 50.5 51.6 50.1 50.9 Mag 0.651 0.660 0.665 0.683 0.712 0.733 0.748 0.768 0.784 0.808 0.835 0.853 0.848 0.860 0.869 0.884 0.888 0.906 0.911 0.910 0.920 0.931 0.932 0.936 0.911 0.933 Ang -175.5 -175.8 -175.1 -174.6 -176.1 -176.6 -177.4 -177.2 -178.6 178.6 178.2 176.4 174.3 173.8 172.0 170.0 168.5 167.7 166.2 165.5 165.7 164.4 162.3 159.1 158.1 157.5 Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each; Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 3 Revised May 2006