Excelics EPA680AV High efficiency heterojunction power fet Datasheet

EPA680A/EPA680AV
High Efficiency Heterojunction Power FET
UPDATED 05/02/2006
1320
60
FEATURES
•
•
•
•
•
•
D
+36.5dBm TYPICAL OUTPUT POWER
6.5dB TYPICAL POWER GAIN FOR EPA680A
AND 8.0dB FOR EPA680AV AT 12GHz
0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY AND RELIABILITY
Idss SORTED IN 160mA PER BIN RANGE
231
D
440
100
40
G
G
135
G
G
50
201
Chip Thickness: 45 ± 15 microns
: Via Hole
No Via Hole For EPA680A
All Dimensions In Microns
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EPA680A
SYMBOLS
EPA680AV
PARAMETERS/TEST CONDITIONS
UNIT
MIN
TYP
35.5
5.5
MAX
MIN
TYP
36.5
35.5
36.5
dBm
6.5
7
8
dB
36
%
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
1250
2050
Gm
Transconductance
Vds=3V, Vgs=0V
1360
2150
Vp
Pinch-off Voltage
Vds=3V,Ids=20mA
BVgd
Drain Breakdown Voltage
Igd=6.8mA
-13
-15
-13
-15
BVgs
Source Breakdown Voltage
Igs=6.8mA
-7
-14
-7
-14
P1dB
G1dB
Rth
48
D
D
33
-1.0
Thermal Resistance (Au-Sn Eutectic Attach)
2690
1250
2050
1360
2150
-2.5
-1.0
6
MAX
2690
mA
mS
-2.5
V
V
V
o
5.5
C/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
Note:
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reserve Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
EPA680A
EPA680AV
ABSOLUTE1
CONTINUOUS2
ABSOLUTE1
CONTINUOUS2
12V
-5V
30.6 mA
-5.1 mA
33.5 dBm
o
175 C
o
-65/175 C
23 W
8V
-3V
10.2 mA
-1.7 mA
@ 3dB Compression
175oC
-65/175oC
23 W
12V
-5V
30.6 mA
-5.1 mA
33.5 dBm
175oC
-65/175oC
25 W
8V
-3V
10.2 mA
-1.7 mA
@ 3dB Compression
175oC
-65/175oC
25 W
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised May 2006
EPA680A/EPA680AV
High Efficiency Heterojunction Power FET
UPDATED 05/02/2006
S-PARAMETERS
EPA680A
Freq
S11
8V, 1/2 Idss
S21
S12
S22
(GHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
1
0.943
-164.0
7.210
90.7
0.009
21.7
0.681
-174.6
2
0.944
-173.1
3.626
78.2
0.011
23.5
0.697
-174.5
3
0.945
-176.8
2.393
68.8
0.011
26.1
0.711
-173.2
4
0.942
-179.5
1.770
60.1
0.013
36.0
0.727
-172.8
5
0.941
178.9
1.441
52.6
0.014
41.6
0.745
-172.3
6
0.940
176.6
1.133
44.8
0.015
45.8
0.765
-172.6
7
0.944
174.7
0.921
38.3
0.016
48.4
0.798
-172.8
8
0.944
173.0
0.761
32.0
0.015
47.5
0.817
-173.6
9
0.942
171.1
0.638
25.9
0.016
53.6
0.840
-174.0
10
0.945
169.2
0.550
20.4
0.017
54.5
0.857
-175.2
11
0.947
167.6
0.477
15.2
0.018
52.5
0.870
-175.8
12
0.946
166.5
0.422
10.5
0.020
52.9
0.885
-177.2
13
0.946
165.3
0.376
5.9
0.021
46.6
0.887
-178.3
14
0.948
165.0
0.339
1.6
0.023
53.1
0.904
-179.8
15
0.939
164.4
0.309
-2.1
0.024
47.6
0.900
179.5
16
0.945
164.5
0.285
-5.0
0.022
45.8
0.914
178.6
17
0.938
164.5
0.262
-9.1
0.024
45.2
0.920
177.4
18
0.931
164.8
0.240
-11.9
0.028
41.0
0.915
175.8
19
0.937
164.8
0.223
-14.8
0.028
40.1
0.926
175.8
20
0.931
165.3
0.211
-16.4
0.033
41.9
0.936
175.3
21
0.919
163.0
0.195
-20.6
0.036
39.0
0.948
175.1
22
0.924
161.1
0.185
-23.2
0.038
40.6
0.935
176.8
23
0.907
159.4
0.180
-26.0
0.043
35.9
0.949
175.1
24
0.908
156.4
0.173
-29.9
0.049
31.5
0.937
175.2
25
0.898
155.1
0.169
-33.5
0.056
29.0
0.944
173.6
26
0.888
152.3
0.168
-37.4
0.066
24.1
0.939
172.1
Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each;
10 source wires, 7 mils each.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised May 2006
EPA680A/EPA680AV
High Efficiency Heterojunction Power FET
UPDATED 05/02/2006
S-PARAMETERS
EPA680AV
Freq
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S11
Mag
0.962
0.965
0.968
0.971
0.970
0.974
0.974
0.976
0.981
0.978
0.975
0.984
0.984
0.980
0.991
0.973
0.993
0.981
0.986
0.989
0.981
0.986
0.987
0.988
0.980
0.961
8V, 1/2 Idss
S21
Ang
-166.0
-174.4
-177.9
180.0
179.9
178.3
177.2
175.6
174.6
173.2
171.9
170.5
170.9
169.1
169.7
168.6
168.0
167.8
166.4
165.4
159.4
159.1
158.3
158.7
158.9
159.2
Mag
7.084
3.544
2.340
1.727
1.334
1.089
0.918
0.785
0.684
0.598
0.523
0.463
0.407
0.349
0.320
0.281
0.256
0.226
0.210
0.196
0.192
0.172
0.160
0.142
0.126
0.114
S12
Ang
90.5
79.4
70.9
62.9
56.3
49.5
43.0
37.5
31.2
25.1
20.9
15.4
10.7
6.4
3.4
-1.3
-5.1
-8.3
-11.8
-14.6
-18.9
-22.8
-25.4
-28.2
-28.7
-30.3
Mag
0.011
0.012
0.011
0.013
0.012
0.013
0.013
0.015
0.014
0.013
0.018
0.016
0.017
0.019
0.017
0.017
0.017
0.017
0.018
0.020
0.022
0.021
0.022
0.024
0.022
0.027
S22
Ang
16.4
17.2
25.3
32.7
38.2
43.4
53.8
55.3
55.3
58.5
62.1
62.8
59.7
62.2
58.8
53.4
59.0
50.7
51.7
45.1
42.2
45.3
50.5
51.6
50.1
50.9
Mag
0.651
0.660
0.665
0.683
0.712
0.733
0.748
0.768
0.784
0.808
0.835
0.853
0.848
0.860
0.869
0.884
0.888
0.906
0.911
0.910
0.920
0.931
0.932
0.936
0.911
0.933
Ang
-175.5
-175.8
-175.1
-174.6
-176.1
-176.6
-177.4
-177.2
-178.6
178.6
178.2
176.4
174.3
173.8
172.0
170.0
168.5
167.7
166.2
165.5
165.7
164.4
162.3
159.1
158.1
157.5
Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 15 mils each;
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
Revised May 2006
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