Bourns CD216A-B120RLF Lead free versions available, rohs compliant (lead free version), low profile, surface mount, very low forward voltage drop Datasheet

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V SC
AV ER OM
AI SIO PL
LA N IA
BL S NT
E
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Features
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Applications
Lead free versions available
RoHS compliant (lead free version)*
Low profile
Surface mount
Very low forward voltage drop
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Cellular phones
PDAs
Desktop PCs and notebooks
Digital cameras
MP3 players
CD216A-B120L ~ B140 MITE Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real
estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 20 V up to 40 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
CD216-
Symbol
Unit
B120L
B120R
B130L
B140
Forward Voltage (Max.)
(If = 1 A)
VF
0.45
0.53
0.38
0.55
V
Typical Junction
Capacitance*
CT
90
75
70
60
pF
Reverse Current (Max.)
(at Rated VR)
IR
400
10
410
500
µA
B130L
B140
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
CD216-
Symbol
B120L
Repetitive Peak Reverse Voltage
B120R
Unit
VRRM
VDC
20
20
30
40
V
DC Blocking Voltage
20
20
30
40
V
RMS Voltage
VRMS
14
14
21
28
V
Average Forward Current
@ TL = 130 °C
Peak Forward Surge Current**
Max. Instantaneous Forward Voltage***
@ IF = 0.1 A
@ IF = 1.0 A
@ IF = 2.0 A
@ IF = 3.0 A
Max. Instantaneous Reverse Current
@ VR = 40 V
@ VR = 30 V
@ VR = 20 V
@ VR = 10 V
@ VR = 5 V
Thermal Resistance
Junction to Lead (Anode)
Junction to Tab (Cathode)
Junction to Ambient
Storage Temperature
Junction Temperature
IO
1
A
IFSM
50
50
50
40
A
VF
0.34
0.45
0.455
0.53
0.595
0.30
0.38
0.36
0.55
V
0.65
0.52
0.85
0.4
0.1
0.41
0.13
0.05
0.50
IR
RθJL
RθJTAB
RθJA
TSTG
TJ
** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method).
*** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
0.0100
0.0010
0.0005
35
20
250
0.15
mA
°C/W
°C/W
°C/W
-55 to +125
°C
-55 to +150
°C
CD216A-B120L ~ B140 MITE Chip Diode
Product Dimensions
Recommended Pad Layout
H
A
A
B
B
K
C
J
D
Dimension
A (Max.)
C
B (Min.)
G
I
G
F
C (Min.)
D (Max.)
E
E (Min.)
E
DO-216AA
2.67
(0.105)
2.54
(0.100)
1.27
(0.050)
0.635
(0.025)
0.762
(0.030)
D
Physical Specifications
Dimension
A
B
C
D
E
F
G
H
I
J
K
(DO-216AA)
1.75 - 2.05
(0.069 - 0.081)
1.80 - 2.20
(0.071 - 0.087)
0.95 - 1.25
(0.037 - 0.049)
0.42 - 0.68
(0.017 - 0.027)
0.70 - 1.00
(0.028 - 0.039)
-0.05 - +0.10
(0.002 - 0.004)
0.10 - 0.25
(0.004 - 0.010)
3.65 - 3.95
(0.144 - 0.156)
0.40 - 0.70
(0.016 - 0.028)
1.10 - 1.50
(0.043 - 0.059)
0.20 - 0.80
(0.008 - 0.060)
MM
DIMENSIONS:
(INCHES)
Case..............................................JEDEC DO-216AA Molded plastic
Polarity ................................................Cathode designated by TAB 1
Weight ....................................................Approximately 0.016 grams
Mounting Position ................................................................One way
Typical Part Marking
CD216A-B120L ..........................................................................B2L
CD216A-B120R ..........................................................................B2E
CD216A-B130L ..........................................................................B3L
CD216A-B140 ............................................................................B4S
How To Order
CD 216A - B 1 20 L __
Common Code
Chip Diode
Package
• 216A = DO-216AA
Model
B = Schottky Barrier Series
Average Forward Current (Io) Code
1 = 1 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
30 = 30 V
40 = 40 V
Forward Voltage Suffix
L = Low Forward Voltage Vf (CD216-B120L, CD216-B130L)
R = Low Leakage Current IR (CD216-B120R)
Terminations
LF = 100 % Sn (lead free)
Blank = Sn/Pb
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B120L
Reverse Characteristics
Forward Characteristics
100
10
Ta = 25 °C
Pulsewidth: 300 µs
125 °C
10
Reverse Current (µA)
Forward Current (Amps)
100 °C
1
1
0.1
25 °C
0.01
125 °C
100 °C
0.001
25 °C
0.1
0
0.0
0.2
0.4
0.6
5
10
15
20
25
0.8
Reverse Voltage (Volts)
Forward Voltage (Volts)
Capacitance Between Terminals
Derating Curve
200
1.25
180
F = 1 MHz
Ta = 25 °C
160
140
0.75
Capacitance (pF)
Average Forward Current (Amps)
1.00
0.50
120
100
80
60
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
40
20
0.00
25
50
75
100
125
Lead Temperature (°C)
150
0
0
10
20
Reverse Voltage (Volts)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
30
40
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B120R
Reverse Characteristics
Forward Characteristics
10
1000
Ta = 25 °C
Pulsewidth: 300 µs
125 °C
100
Reverse Current (µA)
Forward Current (Amps)
100 °C
1
10
1
25 °C
0.1
125 °C
100 °C
0.01
25 °C
0
0.1
0.2
0.4
0.6
5
0.8
10
15
20
25
Reverse Voltage (Volts)
Forward Voltage (Volts)
Capacitance Between Terminals
1.25
150
1.00
125
F = 1 MHz
Ta = 25 °C
100
0.75
Capacitance (pF)
Average Forward Current (Amps)
Derating Curve
0.50
75
50
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
25
0.00
25
50
75
100
125
150
0
Lead Temperature (°C)
0
10
20
30
40
Reverse Voltage (Volts)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B130L
Reverse Characteristics
Forward Characteristics
10
100
Ta = 25 °C
Pulsewidth: 300 µs
125 °C
10
Reverse Current (µA)
Forward Current (Amps)
100 °C
1
1
0.1
25 °C
0.01
100 °C
125 °C
0.001
25 °C
0
0.1
0
0.2
0.4
0.6
0.8
5
10
1
15
20
25
30
35
Reverse Voltage (Volts)
Forward Voltage (Volts)
Capacitance Between Terminals
1.25
150
1.00
125
F = 1 MHz
Ta = 25 °C
100
0.75
Capacitance (pF)
Average Forward Current (Amps)
Derating Curve
0.50
75
50
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
25
0.00
25
50
75
100
125
Lead Temperature (°C)
150
0
0
10
20
Reverse Voltage (Volts)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
30
40
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B140
Reverse Characteristics
Forward Characteristics
10
10
Ta = 25 °C
Pulsewidth: 300 µs
125 °C
1
Reverse Current (mA)
Forward Current (Amps)
100 °C
1
0.1
0.01
25 °C
0.001
0.0001
0
100 °C
125 °C
5
10
15
20
25
30
35
40
45
Reverse Voltage (Volts)
25 °C
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage (Volts)
Capacitance Between Terminals
1.25
150
1.00
125
F = 1 MHz
Ta = 25 °C
100
0.75
Capacitance (pF)
Average Forward Current (Amps)
Derating Curve
0.50
75
50
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
25
0.00
25
50
75
100
Lead Temperature (°C)
125
150
0
0
10
20
30
40
Reverse Voltage (Volts)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120 °
F
D2
W
B
D1 D
P
A
Trailer
C
Device
Leader
....... .......
....... .......
.......
....... ....... .......
End
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
Direction of Feed
Item
Symbol
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
Quantity per Reel
--
DO-216AA
2.90 ± 0.10
(0.114 - 0.004)
5.30 ± 0.10
(0.209 - 0.004)
1.37 ± 0.10
(0.054 - 0.004)
1.55 ± 0.05
(0.061 - 0.002)
330 / 178.0
(12.992 / 7.007)
75.0
MIN.
(2.953)
13.0 ± 0.20
(0.512 - 0.008)
1.75 ± 0.10
(0.069 - 0.004))
5.50 ± 0.05
(0.217 - 0.002)
4.00 ± 0.10
(0.157 - 0.004)
4.00 ± 0.10
(0.157 - 0.004)
2.00 ± 0.05
(0.079 - 0.002)
0.40 ± 0.10
(0.016 - 0.004)
12.00 ± 0.20
(0.472 - 0.008)
18.4
MAX.
(0.724)
MM
(INCHES)
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
Reliable Electronic Solutions
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe:
Tel: +41-(0)41 768 5555 • Fax: +41-(0)41 768 5510
The Americas:
Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
3,000
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
REV. 01/05
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