IRF OM55N10SA Low voltage, low rds(on) power mosfets in hermetic isolated package Datasheet

OM55N10SC OM60N10SC OM75N05SC OM75N06SC
OM55N10SA OM75N05SA OM75N06SA
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
50V, 60V, And 100V Ultra Low RDS(on)
Power MOSFETs In TO-254 And TO-258
Isolated Packages
FEATURES
•
•
•
•
•
Isolated Hermetic Metal Packages
Ultra Low RDS(on)
Low Conductive Loss/Low Gate Charge
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate change simpler drive circuitry.
MAXIMUM RATINGS (Per Device)
PART NO.
OM60N10SC
OM55N10SC
OM55N10SA
OM75N06SC
OM75N06SA
OM75N05SC
OM75N05SA
VDS (V)
100
100
100
60
60
50
50
RDS(on) ( )
.025
.030
.035
.016
.018
.016
.018
ID (A)
60
55
55
75
75
75
75
Package
TO-258AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
TO-258AA
TO-254AA
3.1
PIN CONNECTION
SCHEMATIC
TO-254AA
TO-258AA
Drain
Gate
1
Pin 1:
Pin 2:
Pin 3:
Source
4 11 R1
Supersedes 2 07 R0
3.1 - 47
2 3
Drain
Source
Gate
1
Pin 1:
Pin 2:
Pin 3:
2
3
Drain
Source
Gate
OM55N10SA - OM75N06SC
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
60N10SC
55N10SA
55N10SC
75N06SA
75N06SC
75N05SA
75N05SC
Units
VDS
Drain-Source Voltage
100
100
60
50
V
VDGR
Drain-Gate Voltage (RGS = 1 M )
100
100
60
50
V
60
55
75
75
A
Continuous Drain
Current2
ID @ TC = 100°C
Continuous Drain
Current2
37
33
45
45
A
IDM
Pulsed Drain Current1
180
180
225
225
A
PD @ TC = 25°C
Maximum Power Dissipation
130
125
125
125
W
PD @ TC = 100°C
Maximum Power Dissipation
55
50
50
50
W
1.00
1.00
1.00
1.00
W/°C
-55 to 150
-55 to 150
300
300
ID @ TC = 25°C
Junction-To-Case
Linear Derating Factor
TJ
Operating and
Tstg
Storage Temperature Range
Lead Temperature (1/16" from case for 10 secs.)
-55 to 150 -55 to 150
300
300
°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited: SA ID = 25A & SC ID = 35A @ 25°C
THERMAL RESISTANCE
RthJC
Junction-to-Case
1.0
°C/W
PACKAGE LIMITATIONS
Parameters
ID
TO254AA
TO-258AA
Unit
25
35
A
.020
.025
W/°C
50
40
°C/W
Continuous Drain Current
Linear Derating Factor, Junction-to-Ambient
RthJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
MECHANICAL OUTLINE
3.1
.270
.240
.695
.685
.165
.155
.545
.535
.144 DIA.
.050
.040
.045
.035
.685
.665
.835
.815
.707
.697
.800
.790
.550
.530
.550
.530
.092 MAX.
.750
.500
.550
.510
.005
.065
.055
.200 TYP.
.005
.045
.035
.140 TYP.
.150 TYP.
.150 TYP.
TO-258AA
.260
.249
TO-254AA
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
3.1 - 48
°C
OM60N10SC
Avalanche Characteristics
Avalanche Current
IAR
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
IAR
Avalanche Current
3.1 - 49
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current (VGS = 0)
Gate-Body Leakage
IGSS
Current (VDS = 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
VGS(th)
RDS(on) Static Drain-Source On
Resistance
On State Drain Current
ID(on)
Electrical Characteristics - Dynamic
Forward Transconductance
gfs
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Electrical Characteristics - Switching On
Turn-On Time
Td(on)
Rise Time
tr
(di/dt)on Turn-On Current Slope
Min. Typ. Max. Units Test Conditions
60
A
(repetitive or
non-repetitive,TJ = 25°C)
720 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
100 mJ (pulse width limited
by Tj max, d< 1%)
37
A
(repetitive or
non-repetitive, TJ = 100°C)
100
2
ID = 250 µA, VGS = 0
250
1000
±100
µA
µA
nA
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
4
0.025
0.05
V
A
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
VDS > ID(on) x RDS(on)max, VGS = 10 V
S
pF
pF
pF
VDS > ID(on) x RDS(on)max, ID= 30 A
VDS = 25 V
VGS = 0
f = 1 mHz
25
4000
1100
250
90
270
270
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
nC VDD = 80 V, ID = 30 A, VGS = 10 V
120
200
210
410
nS
nS
nS
60
240
1.6
180
A
A
V
nS
1.8
10
µC
A
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
ISD = 60 A, VGS = 0
ISD = 60 A, di/dt = 100 A/µs
VR = 80 V
Avalanche Characteristics
Avalanche Current
IAR
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
IAR
Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current (VGS = 0)
Gate-Body Leakage
IGSS
Current (VDS = 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
VGS(th)
RDS(on) Static Drain-Source On
Resistance
On State Drain Current
ID(on)
Electrical Characteristics - Dynamic
Forward Transconductance
gfs
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Electrical Characteristics - Switching On
Turn-On Time
Td(on)
Rise Time
tr
(di/dt)on Turn-On Current Slope
Min. Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,TJ = 25°C)
600 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
100 mJ (pulse width limited
by Tj max, d< 1%)
37
A
(repetitive or
non-repetitive, TJ = 100°C)
100
2
Reverse Recovery Charge
Reverse Recovery Current
V
ID = 250 µA, VGS = 0
250
1000
±100
µA
µA
nA
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
4
0.03
0.06
V
A
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
VDS > ID(on) x RDS(on)max, VGS = 10 V
S
pF
pF
pF
VDS > ID(on) x RDS(on)max, ID= 30 A
VDS = 25 V
VGS = 0
f = 1 mHz
55
25
Total Gate Charge
Qg
Electrical Characteristics - Switching Off
Off Voltage Rise Time
Tr(Voff)
Fall Time
tf
Cross-Over Time
tcross
Electrical Characteristics - Source Drain Diode
Source Drain Current
ISD
Source Drain Current (pulsed)
ISDM*
Forward On Voltage
VSD
Reverse Recovery Time
trr
Qrr
IRRM
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
(TC = 25°C unless otherwise specified)
4000
1100
250
90
270
270
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
nC VDD = 80 V, ID = 30 A, VGS = 10 V
120
200
210
410
nS
nS
nS
55
220
1.5
180
A
A
V
nS
1.8
11
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
ISD = 55 A, VGS = 0
ISD = 55 A, di/dt = 100 A/µs
VR = 80 V
3.1
OM55N10SA - OM75N06SC
Reverse Recovery Charge
Reverse Recovery Current
V
60
Total Gate Charge
Qg
Electrical Characteristics - Switching Off
Off Voltage Rise Time
Tr(Voff)
Fall Time
tf
Cross-Over Time
tcross
Electrical Characteristics - Source Drain Diode
Source Drain Current
ISD
Source Drain Current (pulsed)
ISDM*
Forward On Voltage
VSD
Reverse Recovery Time
trr
Qrr
IRRM
OM55N10SC
(TC = 25°C unless otherwise specified)
Avalanche Characteristics
Avalanche Current
IAR
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
IAR
Avalanche Current
3.1 - 50
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current (VGS = 0)
Gate-Body Leakage
IGSS
Current (VDS = 0)
Electrical Characteristics - ON
Gate Threshold Voltage
VGS(th)
RDS(on) Static Drain-Source On
Resistance
On State Drain Current
ID(on)
Electrical Characteristics - Dynamic
Forward Transconductance
gfs
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Electrical Characteristics - Switching On
Turn-On Time
Td(on)
Rise Time
tr
(di/dt)on Turn-On Current Slope
Min. Typ. Max. Units Test Conditions
55
A
(repetitive or
non-repetitive,TJ = 25°C)
600 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
100 mJ (pulse width limited
by Tj max, d< 1%)
37
A
(repetitive or
non-repetitive, TJ = 100°C)
100
2
Reverse Recovery Charge
Reverse Recovery Current
V
ID = 250 µA, VGS = 0
250
1000
±100
µA
µA
nA
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
4
0.035
0.070
V
A
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
TC = 100°C
VDS > ID(on) x RDS(on)max, VGS = 10 V
S
pF
pF
pF
VDS > ID(on) x RDS(on)max, ID= 30 A
VDS = 25 V
VGS = 0
f = 1 mHz
55
25
Total Gate Charge
Qg
Electrical Characteristics - Switching Off
Off Voltage Rise Time
Tr(Voff)
Fall Time
tf
Cross-Over Time
tcross
Electrical Characteristics - Source Drain Diode
Source Drain Current
ISD
Source Drain Current (pulsed)
ISDM*
Forward On Voltage
VSD
Reverse Recovery Time
trr
Qrr
IRRM
OM75N06SC
(TC = 25°C unless otherwise specified)
4000
1100
250
90
270
270
nS VDD = 80 V, ID = 30 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
nC VDD = 80 V, ID = 30 A, VGS = 10 V
120
200
210
410
nS
nS
nS
55
180
1.5
180
A
A
V
nS
1.8
11
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
VDD = 80 V, ID = 30 A
RG = 50 , VGS = 10 V
ISD = 55 A, VGS = 0
ISD = 55 A, di/dt = 100 A/µs
VR = 80 V
(TC = 25°C unless otherwise specified)
Avalanche Characteristics
Avalanche Current
IAR
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
IAR
Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current (VGS = 0)
Gate-Body Leakage
IGSS
Current (VDS = 0)
Electrical Characteristics - ON
Gate Threshold Voltage
VGS(th)
RDS(on) Static Drain-Source On
Resistance
On State Drain Current
ID(on)
Electrical Characteristics - Dynamic
Forward Transconductance
gfs
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Electrical Characteristics - Switching On
Turn-On Time
Td(on)
Rise Time
tr
(di/dt)on Turn-On Current Slope
Min. Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,TJ = 25°C)
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
40
A
(repetitive or
non-repetitive, TJ = 100°C)
60
2
Reverse Recovery Charge
Reverse Recovery Current
ID = 250 µA, VGS = 0
250
1000
±100
µA
µA
nA
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
4
0.016
0.032
V
A
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x RDS(on)max, VGS = 10 V
S
pF
pF
pF
VDS > ID(on) x RDS(on)max, ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
75
25
Total Gate Charge
Qg
Electrical Characteristics - Switching Off
Off Voltage Rise Time
Tr(Voff)
Fall Time
tf
Cross-Over Time
tcross
Electrical Characteristics - Source Drain Diode
Source Drain Current
ISD
Source Drain Current (pulsed)
ISDM*
Forward On Voltage
VSD
Reverse Recovery Time
trr
Qrr
IRRM
V
4100
1800
420
190
900
150
nS VDD = 25 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
nC VDD = 25 V, ID = 40 A, VGS = 10 V
130
360
280
600
nS
nS
nS
75
300
1.5
120
A
A
V
nS
0.45
6.5
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
VDD = 40 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 25 V
OM55N10SA - OM75N06SC
3.1
OM55N10SA
OM75N06SA
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
IAR
Avalanche Current
3.1 - 51
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current (VGS = 0)
Gate-Body Leakage
IGSS
Current (VDS = 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
VGS(th)
RDS(on) Static Drain-Source On
Resistance
On State Drain Current
ID(on)
Electrical Characteristics - Dynamic
Forward Transconductance
gfs
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Electrical Characteristics - Switching On
Turn-On Time
Td(on)
Rise Time
tr
(di/dt)on Turn-On Current Slope
Min. Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,TJ = 25°C)
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
40
A
(repetitive or
non-repetitive, TJ = 100°C)
60
2
ID = 250 µA, VGS = 0
250
1000
±100
µA
µA
nA
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
4
0.018
0.036
V
A
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x RDS(on)max, VGS = 10 V
S
pF
pF
pF
VDS > ID(on) x RDS(on)max, ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
25
4100
1800
420
190
900
150
nS VDD = 25 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 25 V, ID = 40 A
RG = 50 , VGS = 10 V
nC VDD = 25 V, ID = 40 A, VGS = 10 V
130
360
280
600
nS
nS
nS
75
300
1.5
120
A
A
V
nS
0.45
6.5
µC
A
VDD = 40 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 25 V
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
IAR
Avalanche Current
Electrical Characteristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current (VGS = 0)
Gate-Body Leakage
IGSS
Current (VDS = 0)
Electrical Characteristics - ON*
Gate Threshold Voltage
VGS(th)
RDS(on) Static Drain-Source On
Resistance
On State Drain Current
ID(on)
Electrical Characteristics - Dynamic
Forward Transconductance
gfs
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Electrical Characteristics - Switching On
Turn-On Time
Td(on)
Rise Time
tr
(di/dt)on Turn-On Current Slope
Min. Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,TJ = 25°C)
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
40
A
(repetitive or
non-repetitive, TJ = 100°C)
50
2
Reverse Recovery Charge
Reverse Recovery Current
V
ID = 250 µA, VGS = 0
250
1000
±100
µA
µA
nA
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
4
0.016
0.032
V
A
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x RDS(on)max, VGS = 10 V
S
pF
pF
pF
VDS > ID(on) x RDS(on)max, ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
75
25
Total Gate Charge
Qg
Electrical Characteristics - Switching Off
Off Voltage Rise Time
Tr(Voff)
Fall Time
tf
Cross-Over Time
tcross
Electrical Characteristics - Source Drain Diode
Source Drain Current
ISD
Source Drain Current (pulsed)
ISDM*
Forward On Voltage
VSD
Reverse Recovery Time
trr
Qrr
IRRM
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
(TC = 25°C unless otherwise specified)
Avalanche Characteristics
Avalanche Current
IAR
4100
1800
420
190
900
150
nS VDD = 20 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
nC VDD = 20 V, ID = 40 A, VGS = 10 V
130
360
280
600
nS
nS
nS
75
300
1.5
120
A
A
V
nS
0.45
6.5
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
VDD = 35 V, ID = 75 A
RG = 50 , VGS = 10 V
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 20 V
3.1
OM55N10SA - OM75N06SC
Reverse Recovery Charge
Reverse Recovery Current
V
75
Total Gate Charge
Qg
Electrical Characteristics - Switching Off
Off Voltage Rise Time
Tr(Voff)
Fall Time
tf
Cross-Over Time
tcross
Electrical Characteristics - Source Drain Diode
Source Drain Current
ISD
Source Drain Current (pulsed)
ISDM*
Forward On Voltage
VSD
Reverse Recovery Time
trr
Qrr
IRRM
OM75N05SC
(TC = 25°C unless otherwise specified)
Avalanche Characteristics
Avalanche Current
IAR
(TC = 25°C unless otherwise specified)
Avalanche Characteristics
Avalanche Current
IAR
EAS
Single Pulse Avalanche Energy
EAR
Repetitive Avalanche Energy
IAR
Avalanche Current
3.1 - 52
Electrical Charactreristics - OFF
V(BR)DSS Drain-Source
Breakdown Voltage
Zero Gate Voltage
IDSS
Drain Current (VGS = 0)
Gate-Body Leakage
IGSS
Current (VDS = 0)
Electrical Charactreristics - ON
Gate Threshold Voltage
VGS(th)
RDS(on) Static Drain-Source On
Resistance
On State Drain Current
ID(on)
Electrical Charactreristics - Dynamic
Forward Transconductance
gfs
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Electrical Charactreristics - Switching On
Turn-On Time
Td(on)
Rise Time
tr
(di/dt)on Turn-On Current Slope
50
2
Reverse Recovery Charge
Reverse Recovery Current
V
ID = 250 µA, VGS = 0
250
1000
±100
µA
µA
nA
VDS = Max. Rat.
VDS = Max. Rat. x 0.8, TC = 125°C
VGS = ±20 V
4
0.018
0.036
V
A
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
TC = 100°C
VDS > ID(on) x RDS(on)max, VGS = 10 V
S
pF
pF
pF
VDS > ID(on) x RDS(on)max, ID= 40 A
VDS = 25 V
VGS = 0
f = 1 mHz
75
25
Total Gate Charge
Qg
Electrical Charactreristics - Switching Off
Off Voltage Rise Time
Tr(Voff)
Fall Time
tf
Cross-Over Time
tcross
Electrical Charactreristics - Source Drain Diode
Source Drain Current
ISD
ISDM(*) Source Drain Current (pulsed)
Forward On Voltage
VSD
Reverse Recovery Time
trr
Qrr
IRRM
SWITCHING TIMES TEST CIRCUITS
FOR RESISTIVE LOAD
Min. Typ. Max. Units Test Conditions
70
A
(repetitive or
non-repetitive,TJ = 25°C)
900 mJ (starting TJ = 25°C,
ID = IAR, VDD = 25 V)
200 mJ (pulse width limited
by Tj max, d< 1%)
40
A
(repetitive or
non-repetitive, TJ = 100°C)
4100
1800
420
190
900
150
nS VDD = 20 V, ID = 40 A
nS RG = 50 , VGS = 10 V
A/µS VDD = 20 V, ID = 40 A
RG = 50 , VGS = 10 V
nC VDD = 20 V, ID = 40 A, VGS = 10 V
130
360
280
600
nS
nS
nS
75
300
1.5
120
A
A
V
nS
0.45
6.5
µC
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
VDD = 35 V, ID = 75 A
RG = 50 , VGS = 10 V
2200
µF
RL
VDD
VD
VDS
RS
D.U.T.
FW
TEST CIRCUIT FOR INDUCTIVE LOAD SWITCHING
AND DIODE REVERSE RECOVERY TIME
A
A
A
D
MOS
Diode
G
S
L = 100µH
FAST
Diode
–
B
B
3.3
µF
B
D
25
G
+
ISD = 75 A, VGS = 0
ISD = 75 A, di/dt = 100 A/µs
VR = 20 V
3.3
µF
–
RC
D.U.T.
S
85
1000
µF
VDS
OM55N10SA - OM75N06SC
3.1
OM75N05SA
OM55N10SA - OM75N06SC
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
Transconductance
Static Drain-Source On Resistance
RDS(on)
gfs(S)
TJ = 40°C
50
0.030
TJ = 25°C
40
VGS = 10V
0.025
TJ = 125°C
30
0.020
VDS > ID(on) x RDS(on)max
20
0.015
10
0
0
20
40
60
80
100
0.010
ID(A)
0
40
60
80
ID(A)
Capacitance Variations
Gate Charge vs Gate-Source Voltage
VGS (V)
C(nF)
10
5
8
4
6
3
Cies
VDS = 0
f = 1MHz
VDS = 80V
4
20
2
ID = 30A
2
1
0
Coes
Cres
0
0
20
40
60
80
100
Qg(nC)
0
20
40
60
80
100
VDS(V
3.1
Normalized Gate Threshold
Voltage vs Temperature
Normalized On Resistance
vs Temperature
VGS(th)
(norm)
RDS(on)
(norm)
VDS = VGS
ID = 250µA
1.5
1.2
1.0
1.0
0.8
0.5
VDS = 10V
ID = 30A
0.6
-50
0
50
100
0
TJ (°C)
3.1 - 53
-50
0
50
100
TJ (°C)
OM55N10SA - OM75N06SC
OM75N06SC, OM75N06SA, OM75N05SC, OM75N05SA
Transconductance
Static Drain-Source On Resistance
gfs(S)
RDS(on)
VDS > ID(on) x RDS(on)max
80
14
TJ = -40°C
60
12
VGS = 10V
TJ = 25°C
TJ = 125°C
40
10
20
0
8
0
20
40
60
80
ID(A)
6
0
20
40
60
80
ID(A)
Capacitance Variations
Gate Charge vs Gate-Source Voltage
C(nF)
VGS(V)
VDS = 25V
ID = 40A
12
VDS = 0
f = 1MHz
8
6
8
Cies
4
4
Coes
2
Cres
0
0
0
40
80
120
Qg(nC)
0
10
20
30
40
VDS(V)
3.1
Normalized Gate Threshold
Voltage vs Temperature
Normalized On Resistance
vs Temperature
RDS(on)
(norm)
VGS(th)
(norm)
VDS = VGS
ID = 250µA
1.2
1.5
1.0
1.0
0.8
0.5
VGS = 10V
0.6
ID = 40A
0.4
0
-50
0
50
100
TJ(°C)
-50
0
50
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
100
TJ (°C)
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