MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series Vishay Semiconductors New Product formerly General Semiconductor Schottky Barrier Rectifiers Reverse Voltage 35 to 60 V Forward Current 10 A ITO-220AC (MBRF10Hxx) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) TO-220AC (MBR10Hxx) 0.110 (2.80) 0.100 (2.54) 0.185 (4.70) 0.415 (10.54) MAX. 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.410 (10.41) 0.390 (9.91) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 0.676 (17.2) 0.646 (16.4) 0.600 (15.5) 0.580 (14.5) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) PIN 1 2 0.191 (4.85) 0.171 (4.35) PIN 1 2 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.131 (3.39) DIA. 0.122 (3.08) 0.140 (3.56) DIA. 0.130 (3.30) 0.055 (1.39) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.110 (2.80) 0.100 (2.54) 0.060 (1.52) PIN 1 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 CASE PIN 2 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.037 (0.94) 0.027 (0.68) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.56) 0.014 (0.36) Mounting Pad Layout TO-263AB TO-263AB (MBRB10Hxx) 0.42 (10.66) 0.190 (4.83) 0.411 (10.45) 0.380 (9.65) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) 0.245 (6.22) MIN K Dimensions in inches and (millimeters) 0.63 (17.02) 0.055 (1.40) 0.360 (9.14) 0.320 (8.13) 0.047 (1.19) 1 K 0.624 (15.85) 0.591 (15.00) 2 0.08 (2.032) 0-0.01 (0-0.254) 0.110 (2.79) 0.24 (6.096) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.022 (0.55) 0.014 (0.36) 0.021 (0.53) 0.014 (0.36) PIN 1 PIN 2 0.205 (5.20) K - HEATSINK 0.140 (3.56) 0.110 (2.79) 0.195 (4.95) Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08 oz., 2.24 g Document Number 88780 03-Mar-03 0.12 (3.05) Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed: 250 °C/10 seconds, 0.25" (6.35 mm) from case • Rated for reverse surge and ESD • 175 °C maximum operation junction temperature www.vishay.com 1 MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings (TC = 25 °C unless otherwise noted) Parameter Symbol MBR10H35 MBR10H45 MBR10H50 MBR10H60 Unit Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current (See fig.1) IF(AV) 10 A Peak repetitive forward current at TC = 150 °C (20 KHz sq. wave) IFRM 20 A Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Peak repetitive reverse current at tp = 2.0 µs, 1 KHZ IRRM 1.0 0.5 A Peak non-repetitive reverse energy (8/20 µs waveform) ERSM 20 10 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 kΩ Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range VC 25 kV dv/dt 10,000 V/µs TJ –65 to +175 °C TSTG –65 to +175 °C (1) RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH ≤ 30% 4500 3500(2) 1500(3) VISOL V Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Maximum instantaneous forward voltage(4) Symbol at at at at IF = IF = IF = IF = 10 10 20 20 A A A A Maximum instantaneous reverse current at rated DC blocking voltage(4) MBR10H35, MBR10H45 MBR10H50, MBR10H60 Unit Typ Max Typ Max 0.63 0.55 0.75 0.68 – 0.57 – 0.68 0.71 0.61 0.85 0.71 V 100 12 – 2.0 100 12 µA mA TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ =125 °C VF – 0.49 – 0.62 TJ = 25 °C TJ =125 °C IR – 4.0 Thermal Characteristics (TC = 25 °C unless otherwise noted) Parameter Symbol MBR MBRF MBRB Unit Maximum thermal resistance RθJC 2.0 4.0 2.0 °C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300 µs pulse width, 1% duty cycle Ordering Information Product Case Package Code Package Option MBR10H35 – MBR10H60 TO-220AC 45 Anti-Static tube, 50/tube, 2K/carton MBRF10H35 – MBRF10H60 ITO-220AC 45 Anti-Static tube, 50/tube, 2K/carton MBRB10H35 – MBRB10H60 TO-263AB 31 45 81 13” reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13” reel, 800/reel, 4.8K/carton www.vishay.com 2 Document Number 88780 03-Mar-03 MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 – Forward Current Derating Curve 175 Peak Forward Surge Current (A) Average Forward Current (A) 15 MBR, MBRB 10 MBRF 5 150 125 100 75 50 25 0 25 75 50 100 125 150 175 Fig. 4 – Typical Reverse Characteristics TJ = 150°C TJ = 25°C 1.0 TJ = 125°C 0.1 100 10 TJ = 150°C 1 TJ = 125°C 0.1 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 0.01 0.001 MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 0.01 TJ = 25°C 0.0001 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0.2 0.3 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 10 TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p MBR10H35 -- MBR10H45 MBR10H50 -- MBR10H60 1000 100 0 1 10 Reverse Voltage (V) Document Number 88780 03-Mar-03 100 Transeint Thermal Impedance (°C/W) 10000 100 Fig. 3 – Typical Instantaneous Forward Characteristics 10 0 10 Number of Cycles at 60 HZ 100 Instantaneous Forward Current (A) 1 Case Temperature (°C) Instantaneous Reverse Leakage Current (mA) 0 pF - Junction Capacitance TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 1 0.1 0.01 0.1 1 10 t, Pulse Duration (sec.) www.vishay.com 3