isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ8505 DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1400 V VCEO(SUS) Collector-Emitter Voltage 800 V Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ VEBO THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ8504 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A 5.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 2A 1.5 V ICBO Collector cut-off current VCBO=1400V; IE=0; TC=150℃ 0.25 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 1.0 mA hFE DC Current Gain IC= 1.5A ; VCE= 5V 7.5 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 90 VBE(sat) CONDITIONS MIN TYP. MAX 800 UNIT V pF Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.com IC= 5A , VCC= 500V; IB1= 2A;tp= 50μs; VBE(off)= 5V Duty Cycle≤2.0% 2 50 200 ns 175 2000 ns 1250 4000 ns 600 2000 ns isc & iscsemi is registered trademark