AO3424 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3424 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3424 is Pb-free (meets ROHS & Sony 259 specifications). AO3424L is a Green Product ordering option. AO3424 and AO3424L are electrically identical. VDS (V) = 30V ID = 2 A (V GS = 10V) RDS(ON) < 80mΩ (VGS = 10V) RDS(ON) < 95mΩ (VGS = 4.5V) RDS(ON) < 157mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A F TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 0.9 TJ, TSTG t ≤ 10s Steady-State Steady-State A 8 -55 to 150 Symbol A V 1.4 PD TA=70°C A ±12 2 ID IDM TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 2 TA=70°CF Pulsed Drain Current B Power Dissipation A Maximum 30 RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W AO3424 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current TJ=55°C Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 8 Static Drain-Source On-Resistance VGS=4.5V, ID=2A 100 nA 1.8 V 67 80 97 116 76 95 mΩ 157 mΩ A 121 VDS=5V, ID=2A 11.7 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.8 Forward Transconductance VSD DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 226 Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time mΩ S 1 V 1.8 A 270 pF VGS=0V, VDS=15V, f=1MHz 39 VGS=0V, VDS=0V, f=1MHz 1.4 1.7 Ω 2.6 3.2 nC pF 29 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 1.45 VGS=2.5V, ID=1A gFS IS TJ=125°C Units V 1 5 VGS(th) VGS=10V, ID=2A Max 37 0.001 IGSS RDS(ON) Typ VGS=4.5V, VDS=15V, ID=2A VGS=10V, VDS=15V, RL=7.5Ω, RGEN=6Ω pF 1.3 nC 0.5 nC 2.6 4 3.2 5 ns ns 14.5 22 ns 2.1 3 ns trr Body Diode Reverse Recovery Time IF=2A, dI/dt=100A/µs 10.2 13 Qrr Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 3.8 5 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. F. The maximum current rating is limited by bond-wires. Rev 0 : Mar 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3.5V 12 VDS=5V 8 4V 6V 3V 6 ID(A) ID (A) 9 4 6 VGS=2.5V 125°C 3 2 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 200 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance VGS=2.5V VGS=4.5V ID=2A 1.6 150 125 1.7 VGS=10V 3.6 ID=2A 1.4 VGS=4.5V 100 75 1.2 50 VGS=10V 25 VGS=2.5 ID=1A 1 0 0 2 4 6 8 10 13 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 150 ID=2A 140 1.0E+00 130 120 125°C 110 1.0E-01 IS (A) RDS(ON) (mΩ) 3.5 270 1.8 175 RDS(ON) (mΩ) 25°C 100 125°C 1.0E-02 90 25°C 1.0E-03 80 70 25°C 1.0E-04 60 50 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=15V ID=2A 350 300 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 250 200 150 Crss Coss 100 1 50 0 0 0 1 2 3 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 270 10.0 20 10µs RDS(ON) limited TJ(Max)=150°C TA=25°C 1.7 100µs 15 Power (W) ID (Amps) 5 1s 1.0 10s 1ms 3.6 10 10ms 5 DC TJ(Max)=150°C TA=25°C 0.1s 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0 0.001 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000