ISPD60, 61, 62, 63, 64, 65 NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT l Dimensions in mm 2.54 APPROVALS UL recognised, File No. E91231 6.9 6.1 1 2 6 5 3 4 8.9 max. DESCRIPTION The ISPD6_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a standard 6pin dual in line plastic package with the base pin unconnected. 8.3 max. 5.3 max. 1.4 0.9 2.54 min. 0.48 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio (500% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Basepin unconnected for improved noise immunity in high EMI environment l High sensitivity to low input drive current l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM 0.25 15° max. ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 5V 120mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 30V 5V 150mW OPTION G SURFACE MOUNT 8.3 max POWER DISSIPATION 1.2 0.6 10.2 9.5 1.4 0.9 0.26 Total Power Dissipation 250mW (derate linearly 3.3mW/°C above 25°C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92205-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) ISPD60, ISPD63 ISPD61, ISPD64 ISPD62, ISPD65 10 V V µA IF = 10mA IR = 10µA VR = 3V 100 V V nΑ IC = 1mA (note 2) IE = 100µA VCE = 10V % % % 1mA IF , 2V VCE 1mA IF , 2V VCE 1mA IF , 2V VCE V 10mA IF , 10mA IC VRMS VPK (note 1) (note 1) Ω µs µs µs µs VIO = 500V (note 1) VCC= 10V, IC= 2mA, RL = 100Ω , fig.1 30 5 100 500 1000 Collector-emitter Saturation VoltageVCE(SAT) Note 1 Note 2 1.5 1.0 Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO Output Rise Time tr Output Fall Time tf Delay Time td Storage Time ts 1011 TEST CONDITION 60 60 10 3 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 10V Input ton 100Ω toff tr Input 7/12/00 Output tf Output 10% 10% 90% 90% DB92205-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 10000 4000 Current transfer ratio CTR (%) Collector power dissipation P C (mW) 200 150 100 50 0 1000 400 100 40 20 10 VCE = 2V TA = 25°C 0 -30 0 25 50 75 100 0.1 0.2 0.5 125 1 2 5 10 20 50 100 Forward current IF (mA) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 80 5mA 100 TA = 25°C Collector current I C (mA) Forward current I F (mA) 70 60 50 40 30 20 80 2mA 60 40 20 IF = 1mA 10 0 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) Normalized current transfer ratio (V) CE(SAT) Collector-emitter saturation voltage V 0.8 0.6 0.4 0.2 0 4 5 1.5 IF = 1mA VCE = 2V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 7/12/00 3 Normalized Current Transfer Ratio vs. Ambient Temperature IF = 10mA IC = 10mA 1.0 2 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature 1.2 1 100 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 DB92205-AAS/A2