IRF MBRB1035TRR Schottky rectifier Datasheet

Bulletin PD-21042 rev. A 06/06
MBRB10..PbF Series
SCHOTTKY RECTIFIER
10 Amp
IF(AV) = 10Amp
VR = 35/ 45V
Major Ratings and Characteristics
Characteristics
Description/ Features
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse
battery protection.
Values
Units
IF(AV) Rectangular waveform
10
A
IFRM @ TC = 135°C
20
A
VRRM
35/ 45
V
IFSM @ tp = 5 μs sine
1060
A
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
0.57
V
- 65 to 150
°C
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
VF
@ 10 Apk, TJ = 125°C
TJ
range
150°C TJ operation
TO-220 and D2Pak packages
Low forward voltage drop
Lead-Free ("PbF" suffix)
Case Styles
Base
Cathode
2
1
N/C
3
Anode
D2PAK
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1
MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
Voltage Ratings
Part number
VR
MBRB1035PbF
MBRB1045PbF
Max. DC Reverse Voltage (V)
35
VRWM Max. Working Peak Reverse Voltage (V)
45
Absolute Maximum Ratings
Parameters
Values
Units
IF(AV) Max. Average Forward Current
10
A
@ TC = 135° C (Rated VR)
IFRM
Peak Repetitive Forward
Current
20
A
Rated V R, square wave, 20kHz
TC = 135° C
IFSM
Non Repetitive Peak
Surge Current
1060
A
150
EAS
Non-Repetitive Avalanche Energy
8
mJ
IAR
Repetitive Avalanche Current
2
A
Values
Units
Conditions
5μs Sine or 3μs Following any rated load condition and with rated VRRM applied
Rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60Hz
TJ = 25 °C, IAS = 2 Amps, L = 4 mH
Current decaying linearly to zero in 1 μsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM
IRM
Conditions
Max. Forward Voltage Drop
0.84
V
@ 20A
(1)
0.57
V
@ 10A
0.72
V
@ 20A
0.1
mA
TJ = 25 °C
15
mA
TJ = 125 °C
TJ = TJ max.
Max. Instantaneus Reverse Current
(1)
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
VF(TO) Threshold Voltage
0.354
V
rt
Forward Slope Resistance
17.6
mΩ
CT
Max. Junction Capacitance
600
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance
8.0
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ μs (Rated VR)
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
Values
Units
°C
TJ
Max. Junction Temperature Range
-65 to 150
Tstg
Max. Storage Temperature Range
-65 to 175
Conditions
°C
RthJC Max. Thermal Resistance
Junction to Case
2.0
°C/W DC operation
RthCS Typical Thermal Resistance
Case to Heatsink
0.50
°C/W Mounting surface, smooth and greased
Only for TO-220
wt
Approximate Weight
T
Mounting Torque
Marking Device
2
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
MBRB10..
Case style D2Pak
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MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
Reverse Current - IR (mA)
100
TJ = 150°C
10
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
T = 150°C
0.0001
J
TJ = 125°C
10
0
5
10
15 20 25 30 35 40 45
Reverse Voltage - VR (V)
TJ = 25°C
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
Junction Capacitance - C T (pF)
InstantaneousForward Current - IF (A)
100
1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
TJ = 25°C
100
1.8
0
10
20
30
40
50
Forward Voltage Drop - V FM (V)
Reverse Voltage - VR (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Imped ance Z thJC (°C/ W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
0.1
t1
Single Pulse
(Thermal Resistance)
Notes:
t2
1. Duty factor D = t 1/ t 2
2. Peak TJ = PDM x Z thJC+ TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t 1 , Rectangular Pulse Duration (Sec onds)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
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3
MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
10
145
Average Power Loss - (Watts)
Allowable Case Temperature - (°C)
150
DC
140
135
Square wave (D = 0.50)
Rated VR applied
130
125
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
8
6
RMSLimit
DC
4
2
see note (2)
120
0
3
6
9
12
0
15
0
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive Surge Current - I FSM (A)
2
4
6
8
10
12
14
16
Average Forward Current - I F(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With Rated V
Applied
RRM
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
4
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MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
Outline Table
Conform to JEDEC outline D2Pak (SMD-220)
Dimensions in millimeters and (inches)
Part Marking Information
THIS IS A MBRB1045
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
INTERNATIONAL
RECTIFIER
LOGO
MBRB1045
DATE CODE
ASSEMBLY
LOT CODE
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PART NUMBER
YEAR 0 = 2000
WEEK 02
P = LEAD-FREE
5
MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
Tape & Reel Information
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
MBR
B
10
45
1
2
3
4
TRL PbF
5
1
-
Essential Part Number
2
-
B
3
-
Current Rating (10 = 10A)
4
-
Voltage Ratings
5
-
y none = Tube (50 pieces)
6
= Surface Mount
35
= 35V
45
= 45V
y TRL = Tape & Reel
6
y TRR = Tape & Reel
6
-
y none = Standard Production
y PbF = Lead-Free
6
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MBRB10..PbF Series
Bulletin PD-21042 rev. A 06/06
MBR1045
********************************************
* This model has been developed by
*
* Wizard SPICE MODEL GENERATOR (1999) *
*
(International Rectifier Corporation)
*
* Contains Proprietary Information
*
********************************************
* SPICE Model Diode is composed by a
*
* simple diode plus paralled VCG2T
*
********************************************
.SUBCKT MBR1045 ANO CAT
D1 ANO 1 DMOD (0.04688)
*Define diode model
.MODEL DMOD D(IS=2.14849701885607E-04A,N=1.50833541375759,BV=52V,
+ IBV=0.431942180477539A,RS= 0.000618816,CJO=1.90645706123736E-08,
+ VJ=2.31227489200037,XTI=2, EG=0.684712841282824)
********************************************
*Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=-29.9118224426661)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-6.195028E-06/-29.91182)*((V(2,CAT)*1E6)/(I(VX)+1E-6)1))+1)*4.475503E-02*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS MBR1045
Thermal Model Subcircuit
.SUBCKT MBR1045 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.40E+00
1.46E+01
9.30E+01
1.69E+03
RTHERM1
RTHERM2
RTHERM1
RTHERM1
5
4
3
2
4
3
2
1
5.79E-01
7.72E-01
4.45E-01
1.93E-01
.ENDS MBR1045
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 06/06
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