CMPT4209 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT4209 is a PNP Silicon Transistor designed for high speed switching applications. MARKING CODE: 4209 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=8.0V ICES VCE=8.0V, TA=125°C BVCBO IC=100μA 15 15 UNITS V 15 V 4.5 V 200 mA 350 mW -65 to +150 °C 357 °C/W MAX 10 UNITS nA 5.0 μA V BVCES IC=100μA 15 V BVCEO IC=3.0mA 15 V BVEBO IE=100μA 4.5 V VCE(SAT) IC=1.0mA, IB=100μA 0.15 V VCE(SAT) IC=10mA, IB=1.0mA 0.18 V VCE(SAT) IC=50mA, IB=5.0mA IC=1.0mA, IB=100μA 0.60 V 0.80 V 0.86 V 1.5 V VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=0.5V, IC=1.0mA 0.69 35 VCE=0.3V, IC=10mA VCE=0.3V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA 50 850 Cob VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0 Cib VBE=0.5V, IC=0 hFE hFE fT 120 20 40 MHz 7.0 pF 7.0 pF R0 (1-December 2011) CMPT4209 SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ton VCC=1.5V, IC=10mA, IB1=1.0mA 20 toff VCC=1.5V, IC=10mA, IB1=IB2=1.0mA 20 UNITS ns ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 4209 R0 (1-December 2011) w w w. c e n t r a l s e m i . c o m