® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Rev. 1.9 Rev. 1.10 Rev. 1.11 Description Initial Issue Revised VIH to TTL compatible Revised VIH to 0.7*Vcc Revised VDR Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Adding PKG type : 32 TSOP-II Revised PACKAGE OUTLINE DIMENSION in page 9/10/11 Revised typo in PIN CONFIGURATION Revised ORDERING INFORMATION in page 12 Revised PACKAGE OUTLINE DIMENSION in page 8/12 Revised typo in REVISION HISTORY ORDERING INFORMATION in page 12 to 13 Added SL Grade Deleted E Grade Revised ISB1/IDR Added PKG type : 32 P-DIP Revised “Standby Power Supply Current” in page 4 Revised “Data Retention Current” in page 8 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 Issue Date Dec.1.2006 Jan.9.2008 May.6.2008 Mar.3.2009 Aug.5.2009 May.7.2010 Jul.21.2010 Aug.25.2010 Oct.29.2010 Aug.9.2011 Nov.24.2011 Apr.30.2012 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 FEATURES GENERAL DESCRIPTION Fast access time : 55/70ns Low power consumption: Operating current : 30/20mA (TYP.) Standby current : 4μA (TYP.) LL-version 3μA (TYP.) SL-version Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) Green package available Package : 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA 32-pin 400 mil TSOP-II 32-pin 600 mil P-DIP The LY62W5128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62W5128 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY62W5128 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY62W5128 LY62W5128(I) Operating Temperature 0 ~ 70℃ -40 ~ 85℃ Vcc Range Speed 2.7 ~ 5.5V 2.7 ~ 5.5V 55/70ns 55/70ns FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A18 DECODER DQ0-DQ7 I/O DATA CIRCUIT CE# WE# OE# CONTROL CIRCUIT Power Dissipation Standby(ISB1TYP.) Operating(Icc,TYP.) 4µA(LL)/3µA(SL) 30/20mA 4µA(LL)/3µA(SL) 30/20mA 512Kx8 MEMORY ARRAY SYMBOL DESCRIPTION A0 - A18 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE# Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection COLUMN I/O Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 ® LY62W5128 Rev. 1.11 512K X 8 BIT LOW POWER CMOS SRAM PIN CONFIGURATION Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 ® LY62W5128 Rev. 1.11 512K X 8 BIT LOW POWER CMOS SRAM TFBGA(Top View) Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 6.5 -0.5 to VCC+0.5 0 to 70(C grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# H L L L OE# X H L X WE# X H H L SUPPLY CURRENT ISB1 ICC,ICC1 ICC,ICC1 ICC,ICC1 I/O OPERATION High-Z High-Z DOUT DIN H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION MIN. PARAMETER Supply Voltage VCC 2.7 *1 Input High Voltage VIH 0.7*VCC *2 Input Low Voltage VIL - 0.2 Input Leakage Current ILI VCC ≧ VIN ≧ VSS -1 Output Leakage VCC ≧ VOUT ≧ VSS, ILO -1 Current Output Disabled Output High Voltage VOH IOH = -1mA 2.4 Output Low Voltage VOL IOL = 2mA Cycle time = Min. - 55 CE# = VIL and CE2 = VIH, ICC II/O = 0mA - 70 Other pins at VIL or VIH Average Operating Power supply Current Cycle time = 1µs CE#≦0.2V and CE2≧VCC-0.2V,, ICC1 II/O = 0mA Other pins at 0.2V or VCC-0.2V LL/LLI CE# ≧VCC-0.2V *5 25℃ Standby Power SL or CE2≦0.2V ISB1 *5 Supply Current SLI Others at 0.2V or 40℃ VCC - 0.2V SL/SLI - Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 *4 MAX. 5.5 VCC+0.3 0.6 1 UNIT V V V µA - 1 µA 2.7 - 0.4 V V 30 60 mA 20 50 mA 4 10 mA 4 3 3 3 50 10 10 25 µA µA µA µA TYP. 3.0 - ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP.) and TA = 25℃ 5. This parameter is measured at VCC = 3.0V CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. MAX 6 8 - UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -2mA/4mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER SYM. Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH (2) WRITE CYCLE PARAMETER SYM. Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z tWC tAW tCW tAS tWP tWR tDW tDH tOW* tWHZ* LY62W5128-55 MIN. MAX. 55 55 55 30 10 5 20 20 10 - LY62W5128-70 MIN. MAX. 70 70 70 35 10 5 25 25 10 - UNIT LY62W5128-55 MIN. MAX. 55 50 50 0 45 0 25 0 5 20 LY62W5128-70 MIN. MAX. 70 60 60 0 55 0 30 0 5 25 UNIT *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE OE# tOE tOH tOHZ tCHZ tOLZ tCLZ Dout High-Z Data Valid Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low. 3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 High-Z ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address tAW CE# tCW tAS tWP tWR WE# tWHZ Dout TOW High-Z (4) tDW (4) tDH Data Valid Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address tAW CE# tAS tWR tCW tWP WE# tWHZ Dout High-Z (4) tDW tDH Data Valid Din Notes : 1.WE#, CE# must be high during all address transitions. 2.A write occurs during the overlap of a low CE#, low WE#. 3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time SYMBOL TEST CONDITION MIN. VDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V 1.5 LL/LLI VCC = 1.5V CE# ≧ VCC - 0.2V SL 25℃ IDR or CE2 ≦ 0.2V SLI 40℃ Other pins at 0.2V or VCC-0.2V SL/SLI See Data Retention 0 tCDR Waveforms (below) tR tRC* DATA RETENTION WAVEFORM VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 TYP. 2 2 2 2 MAX. 5.5 30 8 8 23 UNIT V µA µA µA µA - - ns - - ns ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 PACKAGE OUTLINE DIMENSION 32 pin 450 mil SOP Package Outline Dimension UNIT SYM. A A1 A2 b c D E E1 e L L1 S y Θ INCH.(BASE) 0.120(MAX) 0.004(MIN) 0.116(MAX) 0.016(TYP) 0.008(TYP) 0.817(MAX) 0.445±0.006 0.555±0.025 0.050(TYP) 0.033±0.017 0.055±0.008 0.026(MAX) 0.004(MAX) o o 0 -10 MM(REF) 3.048(MAX) 0.102(MIN) 2.946(MAX) 0.406(TYP) 0.203(TYP) 20.75(MAX) 11.303±0.152 14.097±0.635 1.270(TYP) 0.838±0.432 1.397±0.203 0.660(MAX) 0.101(MAX) o o 0 -10 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 32 pin 8mm x 20mm TSOP-I Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) 0.047 (MAX) 0.004 ±0.002 0.039 ±0.002 0.009 ±0.002 0.006 ±0.002 0.724 ±0.008 0.315 ±0.008 0.020 (TYP) 0.787 ±0.008 0.024 ±0.004 0.0315 ±0.004 0.003 (MAX) o o 0 ～5 MM(REF) 1.20 (MAX) 0.10 ±0.05 1.00 ±0.05 0.22 ±0.05 0.155 ±0.055 18.40 ±0.20 8.00 ±0.20 0.50 (TYP) 20.00 ±0.20 0.60 ±0.10 0.08 ±0.10 0.08 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 32 pin 8mm x 13.4mm STSOP Package Outline Dimension UNIT SYM. A A1 A2 b c D E e HD L L1 y Θ INCH(BASE) 0.049 (MAX) 0.004 ±0.002 0.039 ±0.002 0.009 ±0.002 0.006 ±0.002 0.465 ±0.008 0.315 ±0.008 0.020 (TYP) 0.528±0.008 0.02 ±0.008 0.031 ±0.005 0.003 (MAX) o o 0 ～5 MM(REF) 1.25 (MAX) 0.10 ±0.05 1.00 ±0.05 0.22 ±0.05 0.155 ±0.055 11.80 ±0.20 8.00 ±0.20 0.50 (TYP) 13.40 ±0.20. 0.50 ±0.20 0.8 ±0.125 0.076 (MAX) o o 0 ～5 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 ® LY62W5128 Rev. 1.11 512K X 8 BIT LOW POWER CMOS SRAM 36 ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 ® LY62W5128 Rev. 1.11 512K X 8 BIT LOW POWER CMOS SRAM 32-pin 400mil TSOP-Ⅱ Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13 ® LY62W5128 512K X 8 BIT LOW POWER CMOS SRAM Rev. 1.11 32 pin 600 mil P-DIP Package Outline Dimension UNIT SYM. A1 A2 B D E E1 e eB L S Q1 INCH(BASE) MM(REF) 0.015(MIN) 0.155±0.005 0.018±0.005 1.650±0.01 0.600±0.010 0.545±0.005 0.100(TYP) 0.650±0.020 0.158±0.043 0.075±0.010 0.070±0.005 0.381(MIN) 3.937±0.127 0.457±0.127 41.910±0.254 15.240±0.254 13.843±0.127 2.540(TYP) 16.510±0.508. 4.013±1.092 1.905±0.254 1.778±0.127 Note : D/E1/S dimension do not include mold flash. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 14 ® LY62W5128 Rev. 1.11 512K X 8 BIT LOW POWER CMOS SRAM ORDERING INFORMATION Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 15 ® LY62W5128 Rev. 1.11 512K X 8 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 16