BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 325 400 V 12.5 A 0.35 Ω TO-218 AA C67078-S3118-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 27 °C Values Unit A 12.5 Pulsed drain current IDpuls TC = 25 °C 50 Avalanche current,limited by Tjmax IAR 12.5 Avalanche energy,periodic limited by Tjmax EAR 13 Avalanche energy, single pulse EAS mJ ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 7.5 mH, Tj = 25 °C 670 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 W 125 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 °C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 07/96 BUZ 325 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 400 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 400 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 400 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 8 A Semiconductor Group nA - 2 0.28 0.35 07/96 BUZ 325 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 8 A Input capacitance 8 pF - 1900 2500 - 260 400 - 110 170 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 9.8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S gfs td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 30 45 - 90 135 - 350 465 - 100 135 tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 325 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 50 V 1 1.5 trr ns - 450 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 12.5 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 25 A Reverse recovery time ISM TC = 25 °C Inverse diode forward voltage A µC - 4 6.8 - 07/96 BUZ 325 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 130 13 W A 11 110 Ptot ID 100 10 90 9 80 8 70 7 60 6 50 5 40 4 30 3 20 2 10 1 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 160 TC TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 2 tp = 3.1µs K/W 10 µs A D ID ZthJC 10 0 V DS /I 100 µs DS (o n) = 10 1 R 1 ms 10 -1 D = 0.50 10 ms 0.20 10 0 0.10 0.05 10 -2 0.02 10 -1 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 0.01 single pulse DC 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp 5 07/96 s 10 0 BUZ 325 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 28 Ptot = 125W l A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.1 kj i h 24 ID a Ω g V [V] f GS 22 20 e 18 16 14 d 12 10 c 8 a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) b c d e 0.9 0.8 0.7 0.6 0.5 f g 0.4 h j 0.3 i k 6 0.2 4 b VGS [V] = a 4.0 4.5 0.1 2 0 0 a 4 8 12 16 b 5.0 c 5.5 d 6.0 f e 6.5 7.0 g 7.5 j h i k 8.0 9.0 10.0 20.0 0.0 V 22 0 4 8 12 16 20 VDS A 26 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max 22 15 S A 13 18 gfs \SYMBOL.ID\ 12 11 16 10 14 9 12 8 10 7 6 8 5 6 4 3 4 2 2 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 1 0 0 2 4 6 8 10 12 14 16 A ID 6 07/96 20 BUZ 325 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 8 A, VGS = 10 V 4.6 1.4 Ω V 98% 4.0 1.2 VGS(th) RDS (on) 1.1 1.0 3.6 typ 3.2 0.9 2.8 0.8 2.4 0.7 2% 2.0 0.6 98% 0.5 1.6 typ 0.4 1.2 0.3 0.8 0.2 0.4 0.1 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Typ. capacitances 160 Tj Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A C IF Ciss 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V VSD VDS Semiconductor Group 10 -1 0.0 7 07/96 3.0 BUZ 325 Avalanche energy EAS = ƒ(Tj) parameter: ID = 12.5 A, VDD = 50 V RGS = 25 Ω, L = 7.5 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 21 A 16 700 mJ V 600 EAS VGS 550 12 500 450 10 0,2 VDS max 400 0,8 VDS max 8 350 300 6 250 200 4 150 100 50 0 20 2 40 60 80 100 120 °C 160 Tj 0 0 20 40 60 80 100 120 nC 150 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96 BUZ 325 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96