CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC3585N8J N-CH 20V 5.5A 8.0A 20.5mΩ 24.5mΩ BVDSS ID@VGS=4.5V(-4.5V), TA=25°C ID@VGS=4.5V(-4.5V), TC=25°C RDSON@VGS=4.5V(-4.5V) typ. RDSON@VGS=2.5V(-2.5V) typ. P-CH -20V -3.5A -5.1A 60.1mΩ 79.4mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline 2928-8J MTC3585N8J G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTC3585N8J-0-T1-G Package Shipping 2928-8J 3000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTC3585N8J CYStek Product Specification Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 2/13 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Gate-Source Voltage VGS Continuous Drain Current *2 TA=25 °C, VGS=4.5V (-4.5V) TA=70 °C, VGS=4.5V (-4.5V) Continuous Drain Current TC=25 °C, VGS=4.5V (-4.5V) TC=100 °C, VGS=4.5V (-4.5V) Pulsed Drain Current IDSM ID IDM *3 Limits N-channel P-channel 20 -20 ±8 ±8 5.5 -3.5 4.4 -2.8 8.0 -5.1 5.1 -3.1 30 -20 TA=25°C, Single device operation V A 1.5 *2 TA=70°C, Single device operation Total Power Dissipation Unit TA=25°C, Single device value at dual operation 0.96 *2 PDSM 1.24 *2 TA=70°C, Single device value at dual operation TC=25°C 3.75 PD * 1 TC=100°C Operating Junction and Storage Temperature Range W 0.79 *2 1.88 Tj; Tstg °C -55~+175 Thermal Data Parameter Symbol Max. Thermal Resistance, Junction-to-ambient, single device operation Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation Max. Thermal Resistance, Junction-to-case Rth,j-a Rth,j-c Value 84 *2 101 *2 40 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial TJ=25°C. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. 20 0.5 - 20.5 24.5 5 1.2 ±100 1 10 29 49 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS MTC3585N8J V nA μA mΩ S VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±8V, VDS=0V VDS=20V, VGS=0V VDS=16V, VGS=0V, Tj=70°C VGS=4.5V, ID=3.5A VGS=2.5V, ID=1.2A VDS=10V, ID=1A CYStek Product Specification CYStech Electronics Corp. Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr - 420 48 48 2.8 16.6 30.8 3.6 6.6 0.8 1.5 - - 0.79 5.7 1.8 1.2 - Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 3/13 pF VDS=10V, VGS=0V, f=1MHz ns VDS=10V, ID=3.5A, VGS=4.5V, RG=1Ω nC VDS=10V, ID=3.5A, VGS=4.5V V ns nC VGS=0V, IS=1.2A IF=1.2A, VGS=0V, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. -20 -0.4 - 60.1 79.4 5.9 -1.2 ±100 -1 -10 85 160 - - 425 59 49 3.6 19.4 38.6 4 6.3 0.8 1.6 - - -0.84 5.8 1.7 -1.2 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±8V, VDS=0V VDS=-20V, VGS=0V VDS=-16V, VGS=0V, Tj=70°C VGS=-4.5V, ID=-2.5A VGS=-2.5V, ID=-2A VDS=-10V, ID=-3A pF VDS=-10V, VGS=0V, f=1MHz ns VDS=-10V, ID=-2.5A, VGS=-4.5V, RG=1Ω nC VDS=-10V, ID=-2A, VGS=-4.5V V VGS=0V, IS=-1.2A ns nC IF=-1.2A, VGS=0V, dIF/dt=100A/μs V nA μA mΩ Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC3585N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 4/13 Recommended Soldering Footprint unit : mm MTC3585N8J CYStek Product Specification Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 5/13 CYStech Electronics Corp. Typical Characteristics : Q1( N-channel ) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 30 ID, Drain Current(A) 25 20 8V, 7V, 6V, 5V, 4V, 3V, 2.5V, 2V 15 10 1.5V 1.2 1 0.8 0.6 ID=250μA, VGS=0V 5 0.4 0 0 1 2 3 4 VDS, Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 100 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=2V VGS=4.5V VGS=2.5V 10 Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.2 0.01 0.1 1 ID, Drain Current(A) 10 0 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance 200 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=3.5A 150 100 50 VGS=4.5V, ID=2.5A 2 RDS(ON) @Tj=25°C : 20.5mΩ typ. 1.6 1.2 0.8 VGS=2.5V, ID=1.2A RDS(ON) @Tj=25°C : 24.5mΩ typ. 0.4 0 0 MTC3585N8J 1 2 3 4 5 6 VGS, Gate-Source Voltage(V) 7 8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 6/13 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q1( N-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 1000 Ciss C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0 5 10 15 VDS, Drain-Source Voltage(V) -75 -50 -25 20 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 8 VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Gate Charge Characteristics 10 1 0.1 VDS=10V Pulsed Ta=25°C 0.01 0.001 6 4 ID=10V 2 ID=3.5A 0 0.01 0.1 ID, Drain Current(A) 0 1 2 4 6 8 10 12 Qg, Total Gate Charge(nC) 14 16 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 6 100 10 ID, Maximum Drain Current(A) RDS(ON) Limited ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 100μs 1ms 10ms 1 100m 1s 0.1 TA=25°C, Tj=150°C, VGS=4.5V RθJA=84°C/W,Single Pulse DC 5 4 3 2 TA=25°C, VGS=4.5V RθJA=84°C/W 1 0 0.01 0.01 MTC3585N8J 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 175 TJ, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 7/13 Typical Characteristics(Cont.) : Q1( N-channel) Typical Transfer Characteristics 50 30 VDS=5V TJ(MAX) =150°C TA=25°C RθJA=84°C/W 40 20 Power (W) ID, Drain Current (A) 25 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 15 30 20 10 10 5 0 0.001 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=84 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTC3585N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 8/13 Typical Characteristics : Q2( P-channel) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 20 15 -BVDSS, Normalized Drain-Source Breakdown Voltage -I D, Drain Current (A) -8V, -7V, -6V, -5V,-4V,-3V -2.5V -2V 10 5 VGS=-1.5V 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=0V -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-2V 100 VGS=-2.5V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 VGS=-4.5V 10 0.2 0.01 0.1 1 0 10 2 -ID, Drain Current(A) R DS(on) , Normalized Static Drain-Source On-State Resistance 200 ID=-2.5A 150 4 6 -IS , Source Drain Current(A) 8 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source On-State Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100 50 2 1.8 VGS=-4.5V, ID=-2.5A RDS(ON) @Tj=25°C : 60.1mΩ 1.6 1.4 1.2 1 0.8 VGS=-2.5V, ID=-2A 0.6 RDS(ON) @Tj=25°C : 79.4mΩ 0.4 0 0 MTC3585N8J 1 2 3 4 5 6 -VGS, Gate-Source Voltage(V) 7 8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 9/13 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q2(P-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 10 0 5 10 15 -VDS, Drain-Source Voltage(V) -75 -50 -25 20 Forward Transfer Admittance vs Drain Current 25 50 75 100 125 150 175 Gate Charge Characteristics 10 8 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 0 Tj, Junction Temperature(°C) 1 0.1 VDS=-10V Pulsed TA=25°C 6 4 VDS=-10V 2 ID=-2.5A 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 2 4 6 8 10 12 Qg, Total Gate Charge(nC) 14 16 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 5 100 10 -I D, Maximum Drain Current(A) -I D, Drain Current(A) 4.5 RDS(ON) Limited 100μs 1ms 10ms 1 100m 1s 0.1 TA=25°C, Tj=150°C, VGS=-4.5V RθJA=84°C/W, Single Pulse DC 4 3.5 3 2.5 2 1.5 1 TA=25°C, VGS=-4.5V RθJA=84°C/W 0.5 0 0.01 0.01 MTC3585N8J 0.1 1 10 100 -ID, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 10/13 Typical Characteristics(Cont.) : Q2(P-channel) Typical Transfer Characteristics 50 20 VDS=-5V 18 TJ(MAX) =150°C TA=25°C RθJA=84°C/W 40 16 14 Power (W) -I D, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 12 10 8 30 20 6 10 4 2 0 0.001 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=84 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTC3585N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 11/13 Reel Dimension Carrier Tape Dimension MTC3585N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 12/13 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC3585N8J CYStek Product Specification CYStech Electronics Corp. Spec. No. : C416N8J Issued Date : 2017.01.09 Revised Date : age No. : 13/13 2928-8J Dimension Marking: D1 D1 D2 D2 3585 Date Code S1 G1 S2 G2 8-Lead 2928-8J Plastic Package CYStek Package Code: N8J Millimeters Min. Max. 0.935 1.100 0.010 0.100 0.925 1.000 0.250 0.400 0.100 0.200 2.950 3.100 2.500 3.000 DIM A A1 A2 b c D E Inches Min. Max. 0.0368 0.0433 0.0004 0.0039 0.0364 0.0394 0.0098 0.0157 0.0039 0.0079 0.1161 0.1220 0.0984 0.1181 DIM E1 E2 e L θ θ1 Millimeters Min. Max. 2.300 2.500 2.650 3.050 0.65 BSC 0.300 0.600 0° 8° 7° TYP Inches Min. Max. 0.0906 0.0984 0.1043 0.1201 0.0256 BSC 0.0118 0.0236 0° 8° 7° TYP Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC3585N8J CYStek Product Specification