Anachip AF60N03DA N-channel enhancement mode power mosfet Datasheet

AF60N03
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching
- RoHS Compliant
- Pb Free Plating Product
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Product Summary
BVDSS (V)
30
RDS(ON) (mΩ)
12
ID (A)
45
„ Pin Assignments
„ Pin Descriptions
(Front View)
S
3
2
D
1
Pin Name
Description
S
G
D
Source
Gate
Drain
G
„ Ordering information
Feature
F :MOSFET
A X
60N03 X X
PN
Package
Packing
D: TO-252
Blank : Tube or Bulk
A : Tape & Reel
„ Block Diagram
D
S
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 8, 2005
1/5
AF60N03
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
TC=25ºC
TC=100ºC
ID
Continuous Drain Current, VGS=10V
IDM
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
Rating
30
±20
45
32
120
44
0.352
-55 to 175
-55 to 175
Drain-Source Voltage
Gate-Source Voltage
TC=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Maximum
3.4
110
Max.
Max.
Units
ºC/W
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise noted)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance (Note 2)
Gate Threshold Voltage
Forward Transconductance (Note 2)
Drain-Source Leakage Current
(TJ=25ºC)
Drain-Source Leakage Current
(TJ=175ºC)
Gate Source Leakage
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
∆BVDSS/∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
Limits
Typ.
-
Max.
-
-
0.026
-
1
-
25
12
25
3
-
VDS=30V, VGS=0V
-
-
1
VDS=24V, VGS=0V
-
-
250
VGS=±20V
ID=20A
VDS=20V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3Ω, VGS=10V
RD=0.75Ω
VGS=0V
VDS=25V,
f=1.0MHz
-
11.6
3.9
7
8.8
57.5
18.5
6.4
1135
200
135
±100
-
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dl/dt=100A/µs
Min.
-
Typ.
23.3
16
Max.
1.3
-
Test Conditions
VGS=0V, ID=250uA
Reference to 25ºC,
ID=1mA
VGS=10V, ID=20A
VGS=4.5V, ID=15A
VDS= VGS, ID=250uA
VDS=10V, ID=10A
Unit
V
V/ºC
mΩ
V
S
uA
nA
nC
nS
pF
„ Source-Drain Diode
Symbol
Parameter
VSD
Forward On Voltage (Note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Unit
V
ns
nC
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
2/5
Sep 8, 2005
AF60N03
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
3/5
Sep 8, 2005
AF60N03
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
4/5
Sep 8, 2005
AF60N03
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
TO-252
( Top View)
Logo
60N03
YYWWX
Part Number
YY : Year
WW: Nth week
X
: Internal code ( Optional)
„ Package Information
Package Type: TO-252
F1
E1
E3
E2
D
D1
F
B1
e
e
C
A3
A2
R: 0.127~0.381
(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A2
A3
B1
D
D1
F
F1
E1
E2
E3
e
C
Dimensions In Millimeters
Min.
Nom.
Max.
1.80
2.30
2.80
0.40
0.50
0.60
0.40
0.70
1.00
6.00
6.50
7.00
4.80
5.35
5.90
2.20
2.63
3.05
0.50
0.85
1.20
5.10
5.70
6.30
0.50
1.10
1.70
3.50
4.00
4.50
2.30
0.35
0.50
0.65
Anachip Corp.
www.anachip.com.tw
Rev. 1.0
5/5
Sep 8, 2005
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