ON NCP110AMX280TBG Linear regulator, low noise and high psrr Datasheet

NCP110
Linear Regulator, Low VIN,
Low Noise and High PSRR,
200 mA
The NCP110 is a linear regulator capable of supplying 200 mA
output current from 1.1 V input voltage. The device provides wide
output range from 0.6 V up to 4.0 V, very low noise and high PSRR.
Due to low quiescent current the NCP110 is suitable for battery
powered devices such as smartphones and tablets. The device is
designed to work with a 1 mF input and a 1 mF output ceramic
capacitor. It is available in ultra−small 0.35P, 0.65 mm x 0.65 mm
Chip Scale Package (CSP) and XDFN4 0.65P, 1 mm x 1 mm.
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MARKING
DIAGRAMS
WLCSP4
CASE 567VS
XM
Features
•
•
•
•
•
•
•
•
•
•
•
Operating Input Voltage Range: 1.1 V to 5.5 V
Available in Fixed Voltage Option: 0.6 V to 4.0 V
±2% Accuracy Over Load/Temperature
Ultra Low Quiescent Current Typ. 20 mA
Standby Current: Typ. 0.1 mA
Very Low Dropout: 70 mV for 1.05 V @ 100 mA
High PSRR: Typ. 95 dB at 20 mA, f = 1 kHz
Ultra Low Noise: 8.8 mVRMS
Stable with a 1 mF Small Case Size Ceramic Capacitors
Available in −WLCSP4 0.65mm x 0.65mm x 0.33mm − Case 567VS
−XDFN4 1mm x 1mm x 0.4mm − Case 711AJ
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
XDFN4
CASE 711AJ
X or XX = Specific Device Code
M
= Date Code
PIN CONNECTIONS
IN
Typical Applications
•
•
•
•
•
•
•
Battery−powered Equipment
Smartphone, Tablets
Digital Cameras
Smoke Detectors
Portable Medical Equipment
RF, PLL, VCO and Clock Power Supplies
Battery Powered Wireless IoT Modules
VOUT
A2
B1
B2
EN
GND
(Top View)
ORDERING INFORMATION
EN
COUT
1 mF
Ceramic
ON
OFF
A1
OUT
NCP110
CIN
1 mF
Ceramic
OUT
(Top View)
VIN
IN
XX M
1
GND
See detailed ordering, marking and shipping information on
page 14 of this data sheet.
Figure 1. Typical Application Schematics
© Semiconductor Components Industries, LLC, 2017
March, 2018 − Rev. 3
1
Publication Order Number:
NCP110/D
NCP110
IN
EN
ENABLE
THERMAL
LOGIC
SHUTDOWN
BANDGAP
MOSFET
REFERENCE
INTEGRATED
DRIVER WITH
SOFT−START
CURRENT LIMIT
OUT
* Active Discharge Only
EN
GND
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
CSP4
Pin No.
XDFN4
Pin
Name
A1
4
IN
A2
1
OUT
B1
3
EN
B2
2
GND
Common ground connection
−
EPAD
EPAD
Expose pad can be tied to ground plane for better power dissipation
Description
Input voltage supply pin
Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor.
Chip enable: Applying VEN < 0.2 V disables the regulator, Pulling VEN > 0.7 V enables the LDO.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN
−0.3 V to 6
V
Output Voltage
VOUT
−0.3 to VIN + 0.3, max. 6 V
V
Chip Enable Input
VCE
−0.3 to 6 V
V
Output Short Circuit Duration
tSC
unlimited
s
Maximum Junction Temperature
TJ
150
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Input Voltage (Note 1)
Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating
Symbol
Thermal Characteristics, CSP4 (Note 3)
Thermal Resistance, Junction−to−Air
Value
Unit
108
°C/W
RqJA
Thermal Characteristics, XDFN4 (Note 3)
Thermal Resistance, Junction−to−Air
208
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
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2
NCP110
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 1.1 V, whichever is greater; IOUT = 1 mA, CIN =
COUT = 1 mF, unless otherwise noted. VEN = 1.0 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Test Conditions
Operating Input Voltage
Output Voltage Accuracy
VIN = VOUT(NOM) + 0.3 V
(VIN ≥ 1.1 V)
VOUT(NOM) ≤ 1.5 V
Symbol
Min
VIN
VOUT
VOUT(NOM) > 1.5 V
Typ
Max
Unit
1.1
5.5
V
−30
+30
mV
−2
+2
%
Line Regulation
VOUT(NOM) + 0.5 V ≤ VIN ≤ 5.5 V, (VIN ≥ 1.1 V)
LineReg
0.02
%/V
Load Regulation
IOUT = 1 mA to 200 mA
LoadReg
0.001
%/mA
VDO
40
70
IOUT = 100 mA
70
130
IOUT = 110 mA
60
140
IOUT = 200 mA
110
190
VOUT(NOM) = 1.80 V
IOUT = 200 mA
65
120
VOUT(NOM) = 2.80 V
IOUT = 200 mA
45
100
Dropout Voltage (Note 5)
VOUT(NOM) = 1.05 V
VOUT(NOM) = 1.20 V
IOUT = 50 mA
Output Current Limit
VOUT = 90% VOUT(NOM)
ICL
Short Circuit Current
VOUT = 0 V
ISC
300
Quiescent Current
IOUT = 0 mA
IQ
20
25
mA
Shutdown Current
VEN ≤ 0.2 V, VIN = 1.1 V
IDIS
0.01
1.0
mA
EN Input Voltage “H”
VENH
EN Input Voltage “L”
VENL
VEN = 1.1 V
IEN
0.2
Turn−On Time
COUT = 1 mF, From assertion of VEN to
VOUT = 95% VOUT(NOM)
tON
120
ms
Power Supply Rejection Ratio
IOUT = 20 mA,
VIN = VOUT + 0.3 V
PSRR
90
95
85
55
dB
f = 10 Hz to 100 kHz
VN
8.8
mVRMS
Thermal Shutdown Threshold
Temperature rising
TSDH
160
°C
Temperature falling
TSDL
140
°C
Active Output Discharge Resistance
VEN < 0.2 V, Version A only
RDIS
280
W
EN Pin Threshold Voltage
EN Pull Down Current
Output Voltage Noise
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 100 kHz
225
mV
300
mA
0.7
0.2
0.5
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 0.02 x VOUT(NOM) below VOUT(NOM).
6. Guaranteed by design.
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3
NCP110
TYPICAL CHARACTERISTICS
1.205
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
1.06
1.055
1.05
IOUT = 1 mA
1.045
IOUT = 200 mA
1.04
1.035
1.03
−40
−20
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120
1.2
IOUT = 1 mA
1.195
IOUT = 200 mA
1.19
1.185
1.8
−40
140
Figure 3. Output Voltage vs. Temperature −
VOUT,nom = 1.05 V − CSP4
LOADREG, LOAD REGULATION (mV)
VOUT, OUTPUT VOLTAGE (V)
120
140
1.8
IOUT = 1 mA
1.795
IOUT = 200 mA
1.79
1.785
−20
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VIN = VOUT,NOM + 0.3 V
IOUT = 1 mA to 200 mA
0.1
0
−40
140
−20
Figure 5. Output Voltage vs. Temperature −
VOUT,nom = 1.8 V − CSP4
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120
140
Figure 6. Load Regulation vs. Temperature
1000
0.3
IGND, GROUND CURRENT (mA)
LINEREG, LINE REGULATION (mV/V)
20
40
60
80 100
TJ, TEMPERATURE (°C)
1
1.805
0.25
0.2
0.15
0.1
0.05
0
−40
0
Figure 4. Output Voltage vs. Temperature −
VOUT,nom = 1.2 V − CSP4
1.81
1.78
−40
−20
−20
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120
140
Figure 7. Line Regulation vs. Temperature
TJ = 125°C
TJ =−40°C
TJ = 25°C
100
10
1u
10u
100u
1m
10m
IOUT, OUTPUT CURRENT (A)
100m
Figure 8. Ground Current vs. Output Current −
VOUT,nom = 1.2 V
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1
NCP110
TYPICAL CHARACTERISTICS
200
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
160
140
120
TJ = 125°C
100
TJ = 25°C
80
60
TJ =−40°C
40
20
180
140
120
100
60
40
IOUT = 10 mA
20
0
−40
40 60
80 100 120 140 160 180 200
IOUT, OUTPUT CURRENT (mA)
20
IOUT = 100 mA
80
0
0
IOUT = 200 mA
160
Figure 9. Dropout Voltage vs. Output Current −
VOUT,nom = 1.2 V − CSP4 Package
140
120
100
140
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
20
60
40
80 100
TJ, TEMPERATURE (°C)
0
Figure 10. Dropout Voltage vs. Temperature −
VOUT,nom = 1.05 V − CSP4 Package
160
IOUT = 200 mA
120
100
80
IOUT = 100 mA
60
40
IOUT = 10 mA
20
0
−40 −20
0
20
40
60
80
TJ, TEMPERATURE (°C)
100
120
80
IOUT = 200 mA
60
IOUT = 100 mA
40
IOUT = 10 mA
20
0
−40
140
Figure 11. Dropout Voltage vs. Temperature −
VOUT,nom = 1.2 V − CSP4 Package
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120
140
380
370
ISC
360
ICL
350
VIN = 1.5 V
VOUT,NOM = 1.2 V
CIN = COUT = 1 mF
340
330
320
ICL: VOUT = 90% VOUT,NOM
ISC: VOUT = 0 V (SHORT)
310
−20
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120
VEN,TH,ON, VEN,TH,OFF, ENABLE
THRESHOLD VOLTAGE (mV)
600
390
300
−40
−20
Figure 12. Dropout Voltage vs. Temperature −
VOUT,nom = 1.8 V − CSP4 Package
400
ICL, CURRENT LIMIT, ISC, SHORT
CIRCUIT CURRENT (A)
−20
140
OFF −> ON
500
ON −> OFF
400
300
200
100
0
−40
Figure 13. Short−circuit Current vs.
Temperature
−20
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120 140
Figure 14. Enable thresholds voltage vs.
Temperature
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NCP110
160
IDIS, DISABLE CURRENT (nA)
IEN, ENABLE PIN CURRENT (mA)
0.3
0.25
0.2
0.15
0.1
0.05
0
−40
140
120
100
80
60
40
20
VEN = 1 V
−20
0
20
40
60
80 100
TJ, TEMPERATURE (°C)
120
0
−40
140
Figure 15. Enable Pin Current vs. Temperature
−20
0
20
40
60
80
100
TJ, TEMPERATURE (°C)
120
140
Figure 16. Disable Current vs. Temperature
300
100
290
280
270
260
250
240
230
220
VIN = 1.5 V
VOUT,nom = 1.2 V
210
200
−40
−20
0
20
40
60
80
TJ, TEMPERATURE (°C)
100
120
ESR, EQUIVALENT SERIES
RESISTANCE (W)
RDIS, DISCHARGE RESISTIVITY (W)
VEN = 0 V
Unstable Region
10
1
Stable Region
0.1
VOUT,nom = 1.2 V
COUT = 1 mF
0.01
140
0
Figure 17. Discharge Resistivity vs.
Temperature
20
40 60
80 100 120 140 160 180 200
IOUT, OUTPUT CURRENT (mA)
Figure 18. Maximum COUT ESR Value vs.
Output Current
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NCP110
SPECTRAL NOISE DENSITY
(mV/√Hz)
10
VIN = 1.5 V
VOUT,nom = 1.2 V
CIN = COUT = 1 mF
1
0.1
0.01
IOUT
(mA)
10 Hz – 100 kHz
100 Hz – 100 kHz
2
10.01
8.79
RMS Output Noise (mV)
20
8.78
7.39
200
8.77
7.44
IOUT
(mA)
10 Hz – 100 kHz
100 Hz – 100 kHz
IOUT = 2 mA
IOUT = 20 mA
IOUT = 200 mA
0.001
10
100
1k
10k
100k
1M
f, FREQUENCY (Hz)
Figure 19. Output Voltage Spectral Noise
Density vs. Frequency
SPECTRAL NOISE DENSITY
(mV/√Hz)
10
VIN = 1.35 V
VOUT,nom = 1.05 V
CIN = COUT = 1 mF
1
0.1
0.01
0.001
10
RMS Output Noise (mV)
2
10.01
8.79
20
8.78
7.39
200
8.77
7.44
IOUT
(mA)
10 Hz – 100 kHz
100 Hz – 100 kHz
2
9.88
8.71
20
9.01
7.73
200
9.08
7.70
IOUT = 2 mA
IOUT = 20 mA
IOUT = 200 mA
100
1k
10k
100k
1M
f, FREQUENCY (Hz)
Figure 20. Output Voltage Spectral Noise
Density vs. Frequency
SPECTRAL NOISE DENSITY
(mV/√Hz)
10
VIN = 2.1 V
VOUT,nom = 1.8 V
CIN = COUT = 1 mF
1
0.1
0.01
0.001
10
IOUT = 2 mA
IOUT = 20 mA
IOUT = 200 mA
100
1k
10k
100k
1M
f, FREQUENCY (Hz)
Figure 21. Output Voltage Spectral Noise
Density vs. Frequency
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RMS Output Noise (mV)
NCP110
120
PSRR, POWER SUPPLY REJECTION
RATIO (dB)
120
VIN = 1.35 V + 100 mVpp
VOUT,nom = 1.05 V
COUT = 1 mF
100
60
40
IOUT = 2 mA
IOUT = 20 mA
IOUT = 200 mA
20
0
10
100
1k
10k
100k
1M
VIN = 1.5 V + 100 mVpp
VOUT,nom = 1.2 V
COUT = 1 mF
100
80
10M
80
60
40
IOUT = 2 mA
IOUT = 20 mA
IOUT = 200 mA
20
0
10
100
1k
10k
100k
1M
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 22. PSRR vs. Frequency
Figure 23. PSRR vs. Frequency
120
PSRR, POWER SUPPLY REJECTION
RATIO (dB)
PSRR, POWER SUPPLY REJECTION
RATIO (dB)
TYPICAL CHARACTERISTICS
VIN = 2.1 V + 100 mVpp
VOUT,nom = 1.8 V
COUT = 1 mF
100
80
60
40
IOUT = 2 mA
IOUT = 20 mA
IOUT = 200 mA
20
0
10
100
1k
10k
100k
1M
f, FREQUENCY (Hz)
Figure 24. PSRR vs. Frequency
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10M
10M
NCP110
1 V/div
100 mA/div
VEN
IIN
VIN = 1.5 V
VOUT,nom = 1.2 V
IOUT = 10 mA
CIN = COUT = 1 mF
VOUT
400 mV/div
400 mV/div
100 mA/div
1 V/div
TYPICAL CHARACTERISTICS
20 ms/div
VEN
IIN
VOUT
20 ms/div
Figure 26. Enable Turn−on Response,
COUT = 4.7 mF, IOUT = 10 mA
1 V/div
100 mA/div
VEN
IIN
VIN = 1.5 V
VOUT,nom = 1.2 V
IOUT = 200 mA
CIN = COUT = 1 mF
400 mV/div
400 mV/div
100 mA/div
1 V/div
Figure 25. Enable Turn−on Response,
COUT = 1 mF, IOUT = 10 mA
VOUT
20 ms/div
VIN = 1.5 V
VOUT,nom = 1.2 V
IOUT = 200 mA
CIN = 1 mF
COUT = 4.7 mF
VOUT
20 ms/div
tFALL = 1 ms
2.5 V
1.5 V
500 mV/div
tRISE = 1 ms
10 mV/div
500 mV/div
10 mV/div
IIN
tFALL = 1 ms
1.5 V
VIN
VEN
Figure 28. Enable Turn−on Response,
COUT = 4.7 mF, IOUT = 200 mA
Figure 27. Enable Turn−on Response,
COUT = 1 mF, IOUT = 200 mA
2.5 V
VIN = 1.5 V
VOUT,nom = 1.2 V
IOUT = 10 mA
CIN = 1 mF
COUT = 4.7 mF
VOUT
VOUT,nom = 1.2 V
IOUT = 10 mA
COUT = 1 mF
VIN
tRISE = 1 ms
VOUT
VOUT,nom = 1.2 V
IOUT = 200 mA
COUT = 1 mF
4 ms/div
4 ms/div
Figure 29. Line Transient Response,
IOUT = 10 mA
Figure 30. Line Transient Response,
IOUT = 200 mA
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NCP110
TYPICAL CHARACTERISTICS
20 mV/div
20 mV/div
COUT = 4.7 mF
VOUT
VOUT
COUT = 1 mF
COUT = 4.7 mF
VIN = 1.5 V
VOUT,nom = 1.2 V
COUT = 1 mF
200 mA
tRISE = 1 ms
1 mA
100 mA/div
100 mA/div
200 mA
IOUT
VIN = 1.5 V
VOUT,nom = 1.2 V
1 mA
1 ms/div
10 ms/div
Figure 32. Load Transient Response,
IOUT = 1 mA to 200 mA
tRISE = 500 ns
tRISE = 500 ns
20 mV/div
20 mV/div
Figure 31. Load Transient Response,
IOUT = 1 mA to 200 mA
VOUT
tRISE = 1 ms
VOUT
tRISE = 1 ms
100 mA/div
1 mA
VIN = 1.5 V
VOUT,nom = 1.2 V
COUT = 1 mF
200 mA
VIN = 1.5 V
VOUT,nom = 1.2 V
COUT = 1 mF
IOUT
1 mA
1 ms/div
4 ms/div
Figure 33. Load Transient Response,
IOUT = 1 mA to 200 mA
Figure 34. Load Transient Response,
IOUT = 1 mA to 200 mA
VIN = 0 V to 1.5 V
VOUT,nom = 1.2 V
IOUT = 10 mA
CIN = COUT = 1 mF
VOUT
1.5 V
IOUT
VIN = 5.5 V
VOUT,nom = 1.2 V
IOUT = 200 mA
CIN = 1 mF
COUT = 1 mF
VIN
VOUT
400 mV/div
50 mA/div 400 mV/div
100 mA/div
200 mA
IOUT
tFALL = 1 ms
IOUT
0V
100 ms/div
2 ms/div
Figure 35. Overheating Protection − TSD
Figure 36. Turn On/Off, Slow Rising VIN
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NCP110
1 V/div
TYPICAL CHARACTERISTICS
VIN = 1.5 V
VOUT,nom = 1.2 V
IOUT = 200 mA
CIN = COUT = 1 mF
400 mV/div
VEN
COUT = 10 mF
VOUT
COUT = 4.7 mF
COUT = 1 mF
40 ms/div
Figure 37. Enable Turn−off Response, Various
Output Capacitors
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NCP110
APPLICATIONS INFORMATION
General
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
The NCP110 is an ultra−low input voltage, ultra−low
noise 200 mA low dropout regulator designed to meet the
requirements of low voltage RF applications and high
performance analog circuits. The NCP110 device provides
very high PSRR and excellent dynamic response. In
connection with low quiescent current this device is well
suitable for battery powered application such as cell phones,
tablets and other. The NCP110 is fully protected in case of
current overload, output short circuit and overheating.
Enable Operation
The NCP110 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function. If
the EN pin voltage is <0.2 V the device is guaranteed to be
disabled. The pass transistor is turned−off so that there is
virtually no current flow between the IN and OUT. The
active discharge transistor is active so that the output voltage
VOUT is pulled to GND through a 280 W resistor. In the
disable state the device consumes as low as typ. 10 nA from
the VIN. If the EN pin voltage >0.7 V the device is
guaranteed to be enabled. The NCP110 regulates the output
voltage and the active discharge transistor is turned−off. The
EN pin has internal pull−down current source with typ. value
of 200 nA which assures that the device is turned−off when
the EN pin is not connected. In the case where the EN
function isn’t required the EN should be tied directly to IN.
Input Capacitor Selection (CIN)
Input capacitor connected as close as possible is necessary
for ensure device stability. The X7R or X5R capacitor
should be used for reliable performance over temperature
range. The value of the input capacitor should be 1 mF or
greater to ensure the best dynamic performance. This
capacitor will provide a low impedance path for unwanted
AC signals or noise modulated onto constant input voltage.
There is no requirement for the ESR of the input capacitor
but it is recommended to use ceramic capacitors for their low
ESR and ESL. A good input capacitor will limit the
influence of input trace inductance and source resistance
during sudden load current changes.
Output Current Limit
Output decoupling
Output Current is internally limited within the IC to a
typical 350 mA. The NCP110 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 360 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
The NCP110 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCP110 is designed to
remain stable with minimum effective capacitance of 0.6mF
to account for changes with temperature, DC bias and
package size. Especially for small package size capacitors
such as 0201 the effective capacitance drops rapidly with the
applied DC bias. Please refer to Figure 38.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU − 140°C
typical). Once the IC temperature falls below the 140°C the
LDO is enabled again. The thermal shutdown feature
provides the protection from a catastrophic device failure
due to accidental overheating. This protection is not
intended to be used as a substitute for proper heat sinking.
Power Dissipation
As power dissipated in the NCP110 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
Figure 38. Capacity vs DC Bias Voltage
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 1.6 W. Larger
www.onsemi.com
12
NCP110
rise for the part. The maximum power dissipation the
NCP110 can handle is given by:
ƪ125oC * T Aƫ
P D [ V IN @ I GND ) I OUTǒV IN * V OUTǓ
(eq. 1)
q JA
140
1.60
PD(MAX), TA = 25°C, 2 oz Cu
1.40
130
PD(MAX), TA = 25°C, 1 oz Cu
120
1.20
qJA, 1 oz Cu
110
1.00
0.80
100
qJA, 2 oz Cu
0.60
90
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
P D(MAX) +
The power dissipated by the NCP110 for given
application conditions can be calculated from the following
equations:
0.40
80
0
100
200
300
400
PCB COPPER AREA (mm2)
500
600
700
230
0.7
qJA, 2 oz Cu
PD(MAX), TA = 25°C, 2 oz Cu
220
0.65
210
0.6
PD(MAX), TA = 25°C, 1 oz Cu
0.55
200
qJA, 1 oz Cu
190
0.5
180
0.45
0.4
170
0
100
200
300
400
500
600
PCB COPPER AREA (mm2)
Figure 40. qJA and PD (MAX) vs. Copper Area (XDFN4)
www.onsemi.com
13
700
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
Figure 39. qJA and PD (MAX) vs. Copper Area (CSP4)
(eq. 2)
NCP110
ORDERING INFORMATION
Nominal
Output
Voltage
Marking
Rotation
NCP110AFCT060T2G
0.60 V
C
0°
NCP110AFCT080T2G
0.80 V
J
0°
NCP110AFCT085T2G
0.85 V
2
0°
NCP110AFCT105T2G
1.05 V
A
0°
Device
NCP110AFCT110T2G
1.10 V
G
0°
NCP110AFCT120T2G
NCP110AFCT180T2G
1.20 V
F
0°
1.80 V
D
0°
NCP110AFCT280T2G
2.80 V
E
0°
Description
Package
Shipping†
200 mA, Active Discharge
WLCSP4
CASE 567VS
(Pb-Free)
5000 /
Tape &
Reel
ORDERING INFORMATION
Device
Nominal Output Voltage
Marking
NCP110AMX060TBG
0.60 V
FC
NCP110AMX075TBG
0.75 V
F3
NCP110AMX080TBG
0.80 V
FJ
NCP110AMX085TBG
0.85 V
F2
NCP110AMX105TBG
1.05 V
FA
NCP110AMX110TBG
1.10 V
FH
NCP110AMX120TBG
1.20 V
FF
NCP110AMX180TBG
1.80 V
FD
NCP110AMX280TBG
2.80 V
FE
Description
Package
Shipping
200 mA, Active Discharge
XDFN4
CASE 711AJ
(Pb-Free)
3000 /
Tape &
Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
14
NCP110
PACKAGE DIMENSIONS
WLCSP4, 0.64x0.64x0.33
CASE 567VS
ISSUE O
A
E
ÈÈ
PIN A1
REFERENCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
B
D
TOP VIEW
A2
0.05 C
A
0.05 C
A1
NOTE 3
C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
−−−
−−−
0.33
0.04
0.06
0.08
0.23 REF
0.180
0.200
0.220
0.610
0.640
0.670
0.610
0.640
0.670
0.35 BSC
DIM
A
A1
A2
b
D
E
e
RECOMMENDED
SOLDERING FOOTPRINT*
SEATING
PLANE
A1
4X
e
b
0.03 C A B
PACKAGE
OUTLINE
e
0.35
PITCH
B
A
1
2
4X
0.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
15
NCP110
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE A
PIN ONE
REFERENCE
0.05 C
2X
4X
A
B
D
ÉÉ
ÉÉ
E
4X
L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.20 mm FROM THE TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
b2
DETAIL A
DIM
A
A1
A3
b
b2
D
D2
E
e
L
L2
0.05 C
2X
TOP VIEW
(A3)
0.05 C
A
0.05 C
NOTE 4
A1
SIDE VIEW
C
SEATING
PLANE
RECOMMENDED
MOUNTING FOOTPRINT*
e
e/2
DETAIL A
1
4X
2
MILLIMETERS
MIN
MAX
0.33
0.43
0.00
0.05
0.10 REF
0.15
0.25
0.02
0.12
1.00 BSC
0.43
0.53
1.00 BSC
0.65 BSC
0.20
0.30
0.07
0.17
L
0.65
PITCH
2X
0.52
PACKAGE
OUTLINE
D2
45 5
4X
D2
4
4X
3
4X
b
0.05
BOTTOM VIEW
M
C A B
0.11
4X
0.24
NOTE 3
0.39
1.20
4X
0.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NCP110/D