ON NUP2301MW6T1D Low capacitance diode array for esd protection in two data line Datasheet

NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
NUP2301MW6T1 is a MicroIntegration device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
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Features
PIN CONFIGURATION
AND SCHEMATIC
• Low Capacitance (2.0 pf Maximum Between I/O Lines)
• Single Package Integration Design
• Provides ESD Protection for JEDEC Standards JESD22
•
•
•
•
•
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Pb−Free Package is Available
6
Reverse Voltage
I/O
2
5
I/O
VP
3
4
N/C
54
MARKING DIAGRAM
3
68d
ORDERING INFORMATION
Symbol
Value
Device
Unit
NUP2301MW6T1
NUP2301MW6T1G
VR
70
Vdc
IF
200
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward
Current (Note 1)
(Averaged over any 20 ms Period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
IFSM
Peak Forward Surge Current
N/C
68 = Specific Device Code
d = Date Code
MAXIMUM RATINGS (Each Diode) (TJ = 25°C unless otherwise noted)
Forward Current
6
SC−88
CASE 419B
STYLE 23
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I2C Bus Protection
Rating
1
12
Applications
•
•
•
•
•
•
•
VN
Package
Shipping †
SC−88
3000/Tape & Reel
SC−88
3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
2.0
1.0
0.5
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 2
1
Publication Order Number:
NUP2301MW6T1/D
NUP2301MW6T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RqJA
625
°C/W
TL
260
°C
Junction Temperature
TJ
−55 to +150
°C
Storage Temperature
Tstg
−55 to +150
°C
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature
Maximum 10 Seconds Duration
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)
70
−
−
Vdc
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
−
−
−
−
−
−
2.5
30
50
mAdc
Capacitance (between I/O pins)
(VR = 0 V, f = 1.0 MHz)
CD
−
1.0
2.0
pF
Capacitance (between I/O pin and ground)
(VR = 0 V, f = 1.0 MHz)
CD
−
1.6
3
pF
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
−
−
−
−
715
855
1000
1250
mVdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 mA)
Reverse Voltage Leakage Current
Forward Voltage
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
10
IR, REVERSE CURRENT (mA)
TA = 85°C
10
TA = −40°C
1.0
0.1
TA = 25°C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (V)
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 150°C
TA = 25°C
0
10
Figure 1. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
1.75
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
1.5
1.25
1.0
0.75
0
2
4
6
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
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2
8
50
NUP2301MW6T1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE 02U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
A
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
D 6 PL
0.2 (0.008)
M
B
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
M
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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3
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
NUP2301MW6T1
MicroIntegration is a trademarks of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NUP2301MW6T1/D
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