CPH3360 Power MOSFET –30V, 303mΩ, –1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • High Speed Switching • 4V drive • Pb-Free, Halogen Free and RoHS compliance ID Max −30V 532mΩ@ −4.5V −1.6A Value 3 Unit Drain to Source Voltage VDSS −30 Gate to Source Voltage VGSS ID ±20 V −1.6 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −6.4 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.9 W Junction Temperature Tj 150 °C V Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : This product is designed to “ESD immunity<200V*”, so please take care when handling. *Machine Model 1 1 : Gate 2 : Source 3 : Drain 2 PACKING TYPE : TL MARKING LOT No. Symbol WS Parameter TL ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter Symbol RθJA © Semiconductor Components Industries, LLC, 2015 July 2015 - Rev. 2 RDS(on) Max 303mΩ@ −10V ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) VDSS 617mΩ@ −4V Typical Applications • DC/DC Converter Drain Current (DC) www.onsemi.com Value 138.8 1 Unit See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : CPH3360/D CPH3360 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=−1mA, VGS=0V VDS=−30V, VGS=0V VGS=±16V, VDS=0V −30 VDS=−10V, ID=−1mA −1.2 typ max Unit V −1 μA ±10 μA −2.6 V VDS=−10V, ID=−0.8A 1.3 RDS(on)1 RDS(on)2 ID=−0.8A, VGS=−10V 233 303 mΩ ID=−0.4A, VGS=−4.5V 380 532 mΩ RDS(on)3 Ciss ID=−0.4A, VGS=−4V 441 617 mΩ Output Capacitance Coss VDS=−10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time td(on) 4.0 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 82 See specified Test Circuit VDS=−15V, VGS=−10V, ID=−1.6A S pF 3.3 ns 12 ns 5.4 ns 2.2 nC 0.36 nC 0.49 nC VSD Forward Diode Voltage IS=−1.6A, VGS=0V −0.9 −1.5 V Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --0.8A RL=18.75Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω CPH3360 S www.onsemi.com 2 CPH3360 www.onsemi.com 3 CPH3360 www.onsemi.com 4 CPH3360 PACKAGE DIMENSIONS unit : mm CPH3 CASE 318BA ISSUE O Recommended Soldering Footprint 1 : Gate 2 : Source 0.6 2.4 1.4 3 : Drain 0.95 0.95 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) WS CPH3 SC-59, SOT-23, TO-236 (Pb-Free / Halogen Free) 3,000 / Tape & Reel CPH3360-TL-H CPH3360-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the CPH3360 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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