SEMICONDUCTORS IRF630 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in high speed switching, uninterruptible power supply, motor control, audio amplifiers, industrial actuators. DC-DC & DC-AC converters for telecom, industrial and consumer environment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM IAR EAS EAR VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Avalanche Current, Limited by Tjmax Avalanche Energy, Single pulse ID = 2.4 A, VDD = 50 V, RGS = 25 Ω, L= 56.3 µH, Tj = 25°C Avalanche Energy, Periodic Limited by Tjmax Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Value Unit 200 9 36 9 V 250 7.4 20 0.4 74 -55 to +150 -55 to +150 A mJ V Ω W °C THERMAL CHARACTERISTICS Symbol Ratings Value RthJC Thermal Resistance, junction-case 1.7 RthJA Thermal Resistance, junction-ambient 62 01/10/2012 COMSET SEMICONDUCTORS Unit °C/W 1/3 SEMICONDUCTORS IRF630 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VGS(th) Drain-Source Breakdown Voltage Gate-threshold Voltage IDSS Zero Gate Voltage Drain Current VDSS IGSS RDS(on) Gate-Source leakage Current Drain-Source on Resistance Min Typ Max Unit ID= 250 µA, VGS= 0 V 200 - - V ID=1 mA, VGS= VDS VDS= 200 V, VGS= 0 V Tj= 25 °C VDS= 200 V, VGS= 0 V Tj= 125 °C VGS= 20 V, VDS= 0 V ID= 5.4 A, VGS= 10 V 2 3 4 V - - 10 - - 50 - 0.35 100 0.4 Min Typ Max Unit 3 4 - - 540 700 - 90 120 - 35 10 15 25 15 50 - Min Typ Max - - 9 µA nA Ω DYNAMIC CHARACTERISTICS Symbol Ratings Test Condition(s) VDS = 2*ID*RDS(on)max ID= 5 A gfs Transconductance CISS Input Capacitance COSS Output Capacitance CRSS td(on) tr td(off) tf Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time VGS= 0 V, VDS= 25 V f= 1MHz VDD= 100 V, VGS= 10 V ID= 4.5 A, RGS= 4.7 Ω S pF ns REVERSE DIODE Symbol Ratings Test Condition(s) VSD Trr Inverse Diode Continuous Forward Current. Inverse diode direct current, pulsed. Inverse Diode Forward voltage Reverse Recovery Time Qrr Reverse Recovery Charge IS ISM TC = 25°C Unit A TC = 25°C - - 36 VGS = 0 V, IF = 9 A VR = 50 V, IF = 9 A di/dt = 100 A/µs TC = 150°C - 170 2 - V ns - 0.95 - µC MECHANICAL DATA CASE TO-220 01/10/2012 COMSET SEMICONDUCTORS 2/3 SEMICONDUCTORS IRF630 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Gate Drain Source Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 01/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3