PD - 94840
IRFIZ34NPbF
l
l
l
l
l
l
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.04Ω
G
ID = 21A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
V GS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
21
15
100
37
0.24
± 20
110
16
3.7
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
4.1
65
°C/W
11/13/03
IRFIZ34NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
2.0
6.5
Typ.
0.052
7.0
49
31
40
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
4.5
LS
Internal Source Inductance
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
700
240
100
12
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.04
Ω
VGS = 10V, ID = 11A
4.0
V
VDS = VGS, ID = 250µA
S
VDS = 25V, ID = 16A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
34
ID = 16A
6.8
nC VDS = 44V
14
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 16A
ns
RG = 18Ω
RD = 1.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
VGS = 0V
V
DS = 25V
pF
= 1.0MHz, See Fig. 5
= 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
21
showing the
A
G
integral reverse
100
p-n junction diode.
S
1.6
V
TJ = 25°C, IS = 11A, VGS = 0V
57
86
ns
TJ = 25°C, IF = 16A
130 200
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
T J ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, =60Hz
Uses IRFZ34N data and test conditions
IRFIZ34NPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
100
10
4.5V
20µs PULSE WIDTH
TTCJ = 25°C
1
0.1
1
10
A
100
10
4.5V
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.4
TJ = 25°C
TJ = 175°C
10
V DS = 25V
20µs PULSE WIDTH
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
A
Fig 2. Typical Output Characteristics
100
5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TTCJ = 175°C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
10
A
I D = 26A
2.0
1.6
1.2
0.8
0.4
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFIZ34NPbF
1200
V GS , Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = Cds + C gd
I D = 16A
V DS = 44V
V DS = 28V
16
800
Coss
12
600
400
Crss
200
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
VDS , Drain-to-Source Voltage (V)
20
30
A
40
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
10
100
10µs
100µs
10
1ms
VGS = 0V
1
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFIZ34NPbF
RD
VDS
25
V GS
D.U.T.
RG
+
-V DD
ID , Drain Current (A)
20
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
90%
5
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC)
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
L
VDS
D.U.T.
RG
+
V
- DD
IAS
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
IRFIZ34NPbF
250
TOP
BOTTOM
200
150
100
50
0
VDD = 25V
25
VDD
VDS
ID
6.5A
11A
16A
50
75
100
125
A
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
+
V
- DS
IRFIZ34NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFIZ34NPbF
TO-220 Full-Pak Package Outline
TO-220 Full-Pak Part Marking Information
E X AMP L E :
T H IS IS AN IR F I840 G
WIT H AS S E MB L Y
L OT COD E 3 43 2
AS S E M B L E D ON W W 24 199 9
IN T H E AS S E MB L Y L IN E "K "
Note: "P" in assembly line
position indicates "Lead-Free"
IN T E R N AT IONAL
R E CT IF IE R
L OGO
AS S E M B L Y
L OT CODE
P AR T N U M B E R
I R F I 84 0G
9 24 K
34
32
D AT E COD E
Y E AR 9 = 199 9
W E E K 24
L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/