AP15T20GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
▼ RoHS Compliant & Halogen-Free
200V
250mΩ
10A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
10
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
6.1
A
26
A
62.5
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data & specifications subject to change without notice
3
Value
Unit
2
℃/W
40
℃/W
1
201202292
AP15T20GS-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=5A
Min.
Typ.
Max. Units
200
-
-
250
V
mΩ
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=3A
-
-
260
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=5A
-
20
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=160V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
45
72
nC
Qgs
Gate-Source Charge
VDS=160V
-
5.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
td(on)
Turn-on Delay Time
VDD=100V
-
10
-
ns
tr
Rise Time
ID=5A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
37
-
ns
tf
Fall Time
VGS=10V
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
1950 3120
pF
Coss
Output Capacitance
VDS=25V
-
100
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
100
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
380
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP15T20GS-HF
30
16
10V
7.0V
6.0V
5.0V
V G =4.0V
20
10V
7.0V
6.0V
5.0V
V GS =4.0V
o
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
T C = 25 o C
10
12
8
4
0
0
0
4
8
12
16
0
20
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.6
I D =5A
V GS =10V
I D =1mA
2.4
Normalized RDS(ON)
Normalized BVDSS (V)
1.4
1.2
1
2
1.6
1.2
0.8
0.8
0.4
0.6
0
-50
0
50
100
150
-50
o
0
50
100
150
o
T j , Junction Temperature ( C)
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
2
8
I D =250uA
Normalized VGS(th) (V)
1.6
IS(A)
6
4
T j =150 o C
T j =25 o C
1.2
0.8
2
0.4
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP15T20GS-HF
f=1.0MHz
2400
I D =5A
V DS =160V
10
2000
8
C iss
1600
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1200
4
800
2
400
C oss
C rss
0
0
0
10
20
30
40
50
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthjc)
100
100us
ID (A)
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
0
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
12
VG
ID , Drain Current (A)
10
QG
8
10V
QGS
6
QGD
4
2
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4