FDB86363_F085 N-Channel PowerTrench® MOSFET D D 80 V, 110 A, 2.4 mΩ Features Typical RDS(on) = 2.0 mΩ at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G RoHS Compliant TO-263 FDB SERIES Qualified to AEC Q101 Applications S S For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 80 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 110 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 512 mJ Power Dissipation 300 W Derate Above 25oC 2.0 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.5 oC/W 43 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.25mH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDB86363 Device FDB86363_F085 ©2014 Fairchild Semiconductor Corporation FDB86363_F085 Rev. C2 Package D2-PAK(TO-263) 1 Reel Size 330mm Tape Width 24mm Quantity 800 units www.fairchildsemi.com FDB86363_F085 N-Channel PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 80V, VGS = 0V 80 - - V - - 1 μA TJ = 25oC TJ = 175oC (Note 4) - - 1 mA - - ±100 nA 2.0 3.0 4.0 V - 2.0 2.4 mΩ - 3.8 4.3 mΩ VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge - VDS = 40V, VGS = 0V, f = 1MHz VDD = 64V ID = 80A - 10000 - pF - 1400 - pF - 95 - pF - 3.3 - Ω - 131 150 nC - 18 21 nC - 47 - nC 24 - nC ns Switching Characteristics ton Turn-On Time - - 231 td(on) Turn-On Delay - 38 - ns tr Rise Time - 129 - ns td(off) Turn-Off Delay - 64 - ns tf Fall Time - 40 - ns toff Turn-Off Time - - 135 ns V VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=64V - 88 101 ns - 129 157 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDB86363_F085 Rev. C2 2 www.fairchildsemi.com FDB86363_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED VGS = 10V BY PACKAGE CURRENT LIMITED BY SILICON 200 150 100 50 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V 1000 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 I = I2 175 - TC 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB86363_F085 Rev. C2 3 www.fairchildsemi.com FDB86363_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10ms 100ms 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25oC 100 TJ = -55oC 50 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 100 0.1 1 10 100 1000 VGS = 0 V 10 TJ = 175 oC TJ = 25 oC 1 0.1 0.01 0.0 7 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 300 300 250 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.01 300 TJ = 175oC 2 STARTING TJ = 150oC Figure 6. Unclamped Inductive Switching Capability 200 0 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V 150 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 250 100 1 0.001 200 Figure 5. Forward Bias Safe Operating Area 300 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 200 150 100 5V 50 80μs PULSE WIDTH Tj=25oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 150 5V VGS 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 100 50 0 5 Figure 9. Saturation Characteristics FDB86363_F085 Rev. C2 250 80μs PULSE WIDTH Tj=175oC 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDB86363_F085 N-Channel PowerTrench® MOSFET Typical Characteristics ID = 80A 25 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 30 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 20 TJ = 175oC 15 TJ = 25oC 10 5 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.2 0.8 ID = 80A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250μA 1.2 ID = 5mA 1.05 0.9 1.00 0.6 0.95 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 10000 Coss 1000 Crss 100 f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage FDB86363_F085 Rev. C2 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 100000 CAPACITANCE (pF) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.6 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.0 10 ID = 80A VDD = 32V 8 VDD = 40V VDD = 48V 6 4 2 0 0 30 60 90 120 Qg, GATE CHARGE(nC) 150 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDB86363_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 FDB86363_F085 Rev. C2 6 www.fairchildsemi.com