DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N055ELE, NP84N055KLE NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP84N055ELE-E1-AY Note1, 2 NP84N055ELE-E2-AY Note1, 2 NP84N055KLE-E1-AY Note1 NP84N055KLE-E2-AY Note1 NP84N055CLE-S12-AZ Note1, 2 NP84N055DLE-S12-AY Note1, 2 NP84N055MLE-S18-AY Note1 NP84N055NLE-S18-AY Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g Sn-Ag-Cu Pure Sn (Tin) TO-220 (MP-25) typ. 1.9 g Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 5 V, ID = 42 A) (TO-262) RDS(on)3 = 9.4 mΩ MAX. (VGS = 4.5 V, ID = 42 A) • Low input capacitance Ciss = 6130 pF TYP. • Built-in gate protection diode (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14100EJ7V0DS00 (7th edition) Date Published October 2007 NS Printed in Japan 1999, 2000, 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±84 A ID(pulse) ±336 A Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Note2 Total Power Dissipation (TA = 25°C) PT 1.8 W Total Power Dissipation (TC = 25°C) PT 200 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Single Avalanche Current Note3 IAS 84/55/20 A Single Avalanche Energy Note3 EAS 70/302/400 mJ Storage Temperature Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.75 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D14100EJ7V0DS NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 42 A 27 58 Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 42 A 5.6 7.0 mΩ RDS(on)2 VGS = 5 V, ID = 42 A 6.5 8.7 mΩ RDS(on)3 VGS = 4.5 V, ID = 42 A 7.0 9.4 mΩ Input Capacitance Ciss VDS = 25 V, 6130 9200 pF Output Capacitance Coss VGS = 0 V, 710 1070 pF Reverse Transfer Capacitance Crss f = 1 MHz 350 630 pF Turn-on Delay Time td(on) VDD = 28 V, ID = 42 A, 29 64 ns Rise Time tr VGS = 10 V, 19 47 ns Turn-off Delay Time td(off) RG = 1 Ω 120 230 ns Fall Time tf 21 53 ns Total Gate Charge QG1 VDD = 44 V, VGS = 10 V, ID = 84 A 120 180 nC QG2 VDD = 44 V, 65 98 nC Gate to Source Charge QGS VGS = 5 V, 18 nC Gate to Drain Charge QGD ID = 84 A 33 nC Body Diode Forward Voltage VF(S-D) IF = 84 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 84 A, VGS = 0 V, 49 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 78 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω S VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14100EJ7V0DS 3 NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE TYPICAL CHARACTERISTICS (TA = 25°C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 280 100 80 60 40 20 0 0 25 50 75 240 200 160 120 80 40 0 100 125 150 175 200 25 0 Figure3. FORWARD BIAS SAFE OPERATING AREA 100 125 150 175 200 450 ID(pulse) d ite im V) )L 0 n 1 o S( = RDVGS ( PW 10 ID(DC) 1 DC P Limowe ite r D d iss ipa 0 ms μs EAS - Single Avalanche Energy - mJ ID - Drain Current - A 75 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 1000 100 50 TC - Case Temperature - °C TC - Case Temperature - °C =1 0μ s tio 10 n 1 TC = 25°C 0.1 Single Pulse 0.1 1 10 400 400 mJ 350 302 mJ 300 IAS = 20 A 55 A 84 A 250 200 150 100 100 70 mJ 50 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - °C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 100 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 0.75°C/W 0.1 0.01 10 μ Single Pulse TC = 25°C 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 4 Data Sheet D14100EJ7V0DS 10 100 1000 NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE Figure6. FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 Pulsed ID - Drain Current - A 100 TA = −40°C 25°C 75°C 150°C 175°C 10 1 Pulsed VGS = 10 V 320 240 5.0 V 160 4.5 V 80 0.1 1.0 2.0 3.0 5.0 4.0 0 6.0 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 15 VGS = 4.5 V 5V 10 V 10 5 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ TA = 175°C 75°C 25°C −40°C VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 10 0.01 0.01 4 3 2 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed 1 1 0 VGS - Gate to Source Voltage - V Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 10 ID = 42 A 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = VGS ID = 250 μA 2.5 2.0 1.5 1.0 0.5 0 ID - Drain Current - A Data Sheet D14100EJ7V0DS −50 0 50 100 150 Tch - Channel Temperature - °C 5 NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE 14 VGS = 4.5 V 5V 10 V 10 8 6 4 2 ID = 42 A 0 −50 50 0 100 VGS = 10 V 100 10 0V 1 Pulsed 0.1 0 150 Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Figure15. SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns VF(S-D) - Source to Drain Voltage - V VGS = 0 V f = 1 MHz 10000 Ciss 1000 Coss Crss 100 0.1 1 10 100 1000 tf td(off) 100 td(on) 10 tr VDD = 28 V VGS = 10 V RG = 1 Ω 1 0.1 Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/μs VGS = 0 V VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 100 10 50 1000 100 10 1 0.1 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1 10 100 9 8 40 VDD = 44 V 28 V 11 V 30 VGS 7 6 5 4 20 3 2 10 0 VDS 1 ID = 84 A 0 20 40 60 80 QG - Gate Charge - nC IF - Diode Forward Current - A 6 1.5 1.0 0.5 Tch - Channel Temperature - °C 100000 Ciss, Coss, Crss - Capacitance - pF 1000 Data Sheet D14100EJ7V0DS 100 0 120 VGS - Gate to Source Voltage - V 12 Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18 Pulsed 16 NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE PACKAGE DRAWINGS (Unit: mm) Note 1.3 ± 0.2 10.0 ± 0.3 No plating 7.88 MIN. 4 2 3 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 9.15 ± 0.3 8.0 TYP. 8.5 ± 0.2 1 5.7 ± 0.4 1.0 ± 0.5 4 4.45 ± 0.2 0.025 to 0.25 P. .5R 0 TY R 0.8 2.54 TYP. P. TY 0.5 ± 0.2 0.75 ± 0.2 0.5 ± 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 1.Gate 2.Drain 2.5 3.Source 15.5 MAX. 5.9 MIN. 4 1 0.75 ± 0.1 2.54 TYP. 1.3 ± 0.2 12.7 MIN. 6.0 MAX. 1 2 3 0.5 ± 0.2 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 2 3 1.0 ± 0.5 10 TYP. Note 4.8 MAX. 1.3 ± 0.2 8.5 ± 0.2 1.3 ± 0.2 4.Fin (Drain) 12.7 MIN. 4.8 MAX. φ 3.6 ± 0.2 10.0 TYP. 1.3 ± 0.2 3 4)TO-262 (MP-25 Fin Cut) 4 8ο 0.25 Note 10.6 MAX. 0.2 0 to 2.54 3)TO-220 (MP-25) 1.3 ± 0.2 2.54 ± 0.25 4.8 MAX. 10 TYP. 1.35 ± 0.3 2)TO-263 (MP-25ZK) 15.25 ± 0.5 1)TO-263 (MP-25ZJ) 3.0 ± 0.3 <R> 0.5 ± 0.2 2.8 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note Not for new design Data Sheet D14100EJ7V0DS 7 NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.3 ± 0.2 1.27 ± 0.2 3.1 ± 0.3 1 2 3 4.45 ± 0.2 10.1 ± 0.3 15.9 MAX. 1.27 ± 0.2 4 8.9 ± 0.2 3 10.0 ± 0.2 13.7 ± 0.3 13.7 ± 0.3 1 2 4.45 ± 0.2 1.3 ± 0.2 3.1 ± 0.2 4 φ 3.8 ± 0.2 6.3 ± 0.3 2.8 ± 0.3 10.0 ± 0.2 1.2 ± 0.3 6)TO-262 (MP-25SK) 5)TO-220 (MP-25K) 0.8 ± 0.1 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D14100EJ7V0DS NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE <R> TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side <R> Reel side MARKING INFORMATION NEC 84N055 LE <R> Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below MP-25ZJ, MP-25ZK Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Recommended Condition Symbol IR60-00-3 Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25, MP-25K, MP-25SK, Time: 10 seconds or less MP-25 Fin Cut Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25ZJ, MP-25ZK, Time (per side of the device): 3 seconds or less MP-25K, MP-25SK Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 300°C or below MP-25, MP-25 Fin Cut Time (per side of the device): 3 seconds or less THDWS P350 P300 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14100EJ7V0DS 9 NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE • The information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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