FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 JANUARY 1996 ✪ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 2 1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Reverse Voltage VR 30 V Forward Current IF 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Reverse Breakdown Voltage VBR 30 Reverse current IR Series Inductance LS TYP. MAX. 20 3.0 Diode Capacitance TCC Temperature Coefficient 280 Case Capacitance 0.15 CC 400 TUNING CHARACTERISTICS (at Tamb = 25°C). Type No. FMMV2101 FMMV2103 FMMV2104 FMMV2105 FMMV2107 FMMV2108 FMMV2109 Nominal Capacitance (pF) VR = 4V, f=1MHz Min. 6.1 9.0 10.8 13.5 19.8 24.3 29.3 Nom. 6.8 10.0 12.0 15.0 22.0 27.0 33.0 UNIT CONDITIONS. V IR = 10µA nA VR = 25V nH f=250MHz Lead length≈1.5mm ppm/ °C VR = 4V, f=1MHz Lead length≈1.5mm pF f=1MHz Q Figure of MERIT VR = 4V, f=50MHz Max. 7.5 11.0 13.2 16.5 24.2 29.7 36.3 450 400 400 400 350 300 280 * SELECTED DEVICE RANGE OFFERED ONLY 3 - 185 Turning Ratio C2 / C30 f=1MHz Min. Max. 2.5 3.3 2.6 3.3 2.6 3.3 2.6 3.3 2.7 3.3 2.7 3.3 2.7 3.3 Partmark Detail 6R 6G 6H 6J 6L 6M 6N