BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions (in mm): Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 50° 94 8394 • Hermetically sealed package • Cathode connected to package DESCRIPTION • Flat glass window BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. • Low dark current Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. APPLICATIONS • High shunt resistance • High linearity • Sensor in exposure and color measuring purposes The device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye. PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) 9 ± 50 420 to 675 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5 BPW21R Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW21R Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 50 °C Junction temperature SYMBOL VALUE VR 10 UNIT V PV 300 mW Tj 125 °C Operating temperature range Tamb - 40 to + 125 °C Storage temperature range Tstg - 40 to + 125 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.7, 23-Nov-11 Document Number: 81519 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW21R www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 20 μA, E = 0 V(BR) VR = 5 V, E = 0 Iro Forward voltage Breakdown voltage Reverse dark current Diode capacitance TYP. MAX. UNIT 1.0 1.3 V 2 30 nA 10 V VR = 0 V, f = 1 MHz, E = 0 CD 1.2 nF VR = 5 V, f = 1 MHz, E = 0 CD 400 pF 38 GΩ Dark resistance VR = 10 mV RD Open circuit voltage EA = 1 klx Vo Temperature coefficient of Vo EA = 1 klx TKVo Short circuit current EA = 1 klx Ik Temperature coefficient of IK 280 4.5 EA = 1 klx TKIk EA = 1 klx, VR = 5 V Ira VR = 5 V, EA = 10-2 to 105 lx Reverse light current Sensitivity MIN. 4.5 450 mV -2 mV/K 9 μA - 0.05 %/K 9 μA S 9 nA/Ix Angle of half sensitivity ϕ ± 50 deg Wavelength of peak sensitivity λp 565 nm Range of spectral bandwidth λ0.5 420 to 675 nm Rise time VR = 0 V, RL = 1 kΩ, λ = 660 nm tr 3.1 μs Fall time VR = 0 V, RL = 1 kΩ, λ = 660 nm tf 3.0 μs BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.3 10 3 10 2 VR = 5 V 10 1 10 20 94 8468 40 60 80 100 1.2 1.1 1.0 0.9 0.8 120 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.7, 23-Nov-11 Ira rel - RelativeReverse Light Current I ro - Reverse Dark Current (nA) 10 4 0 94 8738 20 40 60 80 100 120 Tamb - Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81519 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW21R www.vishay.com 0° 3 10° 20° 10 1 10 0 10 -1 10 -2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 10 -3 ϕ - Angular Displacement 30° 10 2 Srel - Relative Sensitivity IK - Short Circuit Current (µA) 10 Vishay Semiconductors 80° 10 -4 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 10 6 EA - Illuminance (lx) 94 8476 0.6 0.4 0.2 0 94 8475 Fig. 3 - Short Circuit Current vs. Illuminance Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement C D - Diode Capacitance (pF) 1400 1200 E=0 f = 1 MHz 1000 800 600 400 200 0 0.1 1 10 100 V R - Reverse Voltage (V) 94 8473 S (λ)rel - Relative Spectral Sensitivity Fig. 4 - Diode Capacitance vs. Reverse Voltage 1.0 0.8 0.6 0.4 0.2 0 350 94 8477 V λ Eye 450 550 650 750 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Rev. 1.7, 23-Nov-11 Document Number: 81519 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW21R www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 9.1 ± 0.1 + 5.08 nom. ± 0.1 Ø 5.9 ± 0.1 3.1 ± 0.2 Ø 8.13 14 -1 (1.65) Chip position technical drawings according to DIN specifications Ø 0.45 + 0.02 - 0.05 Drawing-No.: 6.511-5002.01-4 Issue:1; 01.07.96 96 12181 Rev. 1.7, 23-Nov-11 Document Number: 81519 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000