SEMICONDUCTOR MMBTA517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. E B L D L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V IC 400 mA PC * 350 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 3 1 P P J M K C CHARACTERISTIC H ) N MAXIMUM RATING (Ta=25 G A 2 Collector Current Collector Power Dissipation * : Package Mounted On 99.5% Alumina 10 8 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR 0.6mm. SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA 30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1.0mA 10 - - V Collector Cut-off Current ICBO VCB=40V - - 1 A Emitter Cut-off Current IEBO VEB=10V - - 1 A DC Current Gain hFE IC=100mA, VCE=2V 30K - - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - 1.5 2 V Current Gain Bandwidth Product fT IC=100mA, f=100MHz, VCE=2V - 220 - MHz VCB=10V, f=1MHz - 5 - pF Collector Output Capacitance 1999. 11. 30 Revision No : 3 Cob 1/2 MMBTA517 1999. 11. 30 Revision No : 3 2/2