APT8020B2FLL APT8020LFLL 800V 38A 0.200W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID B2FLL T-MAX™ TO-264 LFLL D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT8020 UNIT 800 Volts Drain-Source Voltage L A C I N H C N E T IO E T C MA N A OR V AD INF 38 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 690 Watts Linear Derating Factor 5.52 W/°C VGSM PD TJ,TSTG 132 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts °C 300 38 (Repetitive and Non-Repetitive) 1 Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 Volts 38 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.200 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7078 Rev - 8-2001 Symbol APT8020 B2FLL - LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 5320 Coss Output Capacitance VDS = 25V 1020 Crss Reverse Transfer Capacitance f = 1 MHz 168 VGS = 10V 196 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 26 111 VGS = 15V 19 VDD = 0.5 VDSS 17 ID = ID [Cont.] @ 25°C 57 RG = 0.6W 11 Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time UNIT pF L A C I N H C N E T O I E T C MA N A OR V AD INF Qgs t d(on) MAX nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions TYP Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dv/dt dt MIN (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 MAX 38 132 UNIT Amps 1.3 Volts 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 320 Tj = 125°C 650 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 2.2 Tj = 125°C 7.5 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 14 Tj = 125°C 24 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT 0.18 RqJC Junction to Case RqJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 4.16mH, R = 25W, Peak I = 38A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-7078 Rev - 8-2001 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 19.81 (.780) 20.32 (.800) 19.81 (.780) 21.39 (.842) Gate Drain Source Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 25.48 (1.003) 26.49 (1.043) Dimensions in Millimeters and (Inches) 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058