Transistors SMD Type PNP General Purpose Amplifier BSS63 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 PNP general purpose amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCE0 100 V Collector-base voltage VCBO 110 V Emitter-base voltage VEBO 6 V IC 200 mA Collector current Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Total device dissipation Derate above 25 PD 350 2.8 mW mW/ RèJA 357 /W Thermal resistance, junction to ambient Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = 100 ìA, IB = 0 100 V Collector-base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 110 V Emitter-base breakdown voltage V(BR)EBO IE = 1.0 ìA, IC = 0 6 Collector-cutoff current ICBO Emitter-base cut-off current IEBO DC current gain hFE 100 nA VCB = 90 V, IE = 0, TA = 150 50 ìA VEB = 6.0 V, IC = 0 200 nA 0.25 V IC = 10 mA, VCE = 1.0 V 30 IC = 25 mA, VCE = 1.0 V 30 Collector-emitter saturation voltage VCE(sat) IC = 25 mA, IB = 2.5 mA Base-emitter saturation voltage VBE(sat) IC = 25 mA, IB = 2.5 mA Current gain - bandwidth product fT V VCB = 90 V, IE = 0 IC = 25 mA, VCE = 5.0,f = 35 MHz 0.9 50 V MHz Marking Marking T3 www.kexin.com.cn 1