Kexin BSS63 Pnp general purpose amplifier Datasheet

Transistors
SMD Type
PNP General Purpose Amplifier
BSS63
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
0.55
PNP general purpose amplifier
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-emitter voltage
VCE0
100
V
Collector-base voltage
VCBO
110
V
Emitter-base voltage
VEBO
6
V
IC
200
mA
Collector current
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Total device dissipation
Derate above 25
PD
350
2.8
mW
mW/
RèJA
357
/W
Thermal resistance, junction to ambient
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CEO
IC = 100 ìA, IB = 0
100
V
Collector-base breakdown voltage
V(BR)CBO
IC = 10 ìA, IE = 0
110
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 1.0 ìA, IC = 0
6
Collector-cutoff current
ICBO
Emitter-base cut-off current
IEBO
DC current gain
hFE
100
nA
VCB = 90 V, IE = 0, TA = 150
50
ìA
VEB = 6.0 V, IC = 0
200
nA
0.25
V
IC = 10 mA, VCE = 1.0 V
30
IC = 25 mA, VCE = 1.0 V
30
Collector-emitter saturation voltage
VCE(sat)
IC = 25 mA, IB = 2.5 mA
Base-emitter saturation voltage
VBE(sat)
IC = 25 mA, IB = 2.5 mA
Current gain - bandwidth product
fT
V
VCB = 90 V, IE = 0
IC = 25 mA, VCE = 5.0,f = 35 MHz
0.9
50
V
MHz
Marking
Marking
T3
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