Data Sheet No. PD-6.076 IR02H420 HIGH VOLTAGE HALF-BRIDGE Product Summary Features n n n n n n n n Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Matched propagation delay for both channels Independent high and low side output channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output out of phase with HIN VIN (max) 500V ton/off 130 ns trr 270 ns RDS(on) 3.0Ω Ω PD (TA = 25 ºC) 2.0W Description The IR02H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Package IR02H420 9506 Typical Connection U P T O 5 0 0 V D C B U S V IN IR 0 2 H 4 2 0 V C C H IN L IN 1 6 V 2 3 C C H IN L IN V B 9 V IN 7 V O T O 4 C O M C O M L O A D IR02H420 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Parameter Definition Min. Max. VIN VB High Voltage Supply High Side Floating Supply Absolute Voltage -0.3 -0.3 500 525 VO VIH/VIL Half-Bridge Output Voltage Logic Input Voltage (HIN & LIN) -0.3 -0.3 VIN + 0.3 VCC + 0.3 VCC dv/dt PD RθJA TJ TS TL Low Side and Logic Fixed Supply Voltage Peak Diode Recovery dv/dt -0.3 -------55 -55 --- 25 3.5 2.00 60 150 150 300 Package Power Dissipation @ TA ≤ +25ºC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) Units V V/ns W ºC/W ºC Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol Parameter Definition VB VIN VO VCC VIH/VIL High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Low Side and Logic Fixed Supply Voltage Logic Input Voltage (HIN & LIN) ID Continuous Drain Current TA Ambient Temperature Note 1: (TA = 25ºC) (TA = 85ºC) Min. Max. VO + 10 --(note 1) 10 0 VO + 20 500 500 20 VCC -----40 0.7 0.5 125 Logic operational for VO of -5 to 500 V. Logic state held for VO of -5 to - VB. Units V A ºC IR02H420 Dynamic Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. Switching time waveform definitions are shown in figure 2. Symbol Parameter Definition TA = 25ºC Min. Typ. Max. Units ton toff Turn-On Propagation Delay (see note 2) Turn-Off Propagation Delay (see note 2) ----- 130 90 200 200 tr Turn-On Rise Time (see note 2) --- 80 120 tf Turn-Off Fall Time (see note 2) --- 40 70 MT trr Delay Matching, HS & LS Turn-On/Off --- 30 --- Reverse Recovery Time (MOSFET Body Diode) --- 260 --- Qrr Reverse Recovery Charge (MOSFET Body Diode) --- 0.7 --- Test Conditions VS = 0 V VS = 500 V ns IF = 0.7 A µC di/dt = 100A/µs Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. The Input voltage and current levels are referenced to COM. Symbol Parameter Definition Supply Characteristics VCCUV+ VCC Supply Undervoltage Positive Going Threshold VCCUV- VCC Supply Undervoltage Negative Going Threshold IQCC Quiescent VCC Supply Current IQBS Quiescent VBS Supply Current IOS Offset Supply Leakage Current Input Characteristics VIH Logic “1” Input Voltage VIL Logic “0” Input Voltage IIN+ Logic “1” Input Bias Current IINLogic “0” Input Bias Current Output Characteristics RDS(on) Static Drain-to-Source On-Resistance VSD Diode Forward Voltage TA = 25ºC Min. Typ. Max. Units 8.8 9.3 Test Conditions 9.8 V 7.5 8.2 8.6 ------- 140 20 --- 240 50 50 2.7 ------- ----20 --- --0.8 40 1.0 µA µA ----- 3.0 0.8 ----- Ω V µA VB = VS = 500V V VCC = 10V to 20V ID = 700mA Tj = 150 ºC IR02H420 Functional Block Diagram VB VIN 6 V CC 9 1 ___ HIN 2 ___ LIN 3 IRFC420 7 IR2102 VO IRFC420 4 COM Lead Definitions Lead Description Symbol VCC Logic and internal gate drive supply voltage. HIN Logic input for high side Half Bridge output, out of phase LIN Logic input for low side Half Bridge output, in phase VB VIN High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed to feed from VCC to VB. High voltage supply. VO Half-Bridge output. COM Logic and low side of Half-Bridge return. Lead Assignments 1 2 VCC HIN 3 4 6 7 VB V0 LIN COM 9 Lead SIP w/o Leads 5 & 8 IR02H420 9 VIN IR02H420 ___ HIN ___ LIN 50% 50% ton toff tr ___ HIN 90% tf 90% HO 10% V+ 10% 0 VO VO Figure 1. Input/Output Timing Diagram ___ HIN ___ LIN Figure 2. Switching Time Waveform Definitions 50% 50% LO HO 10% MT MT 90% LO HO Figure 3. Delay Matching Waveform Definitions IR02H420 Package Outline WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • (310)322-3331 • FAX (310)322-3332 • TELEX 472-0403 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • (44)0883 713215 • FAX (944)0883 714234 • TELEX 95219 Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 1996 International Rectifier Printed in U.S.A. 3-96 Data and specifications subject to change without notice.