Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Main Product Characteristics General Description High efficiency dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) 2*10A VRRM 45V TJ 150oC VF(max) 0.57V MBR2045C is available in TO-220-3 and TO-220F-3 packages. Mechanical Characteristics Features · · · · · · · · · · Low Forward Voltage: 0.57V @125oC Low Power Loss/High Efficiency 150oC Operating Junction Temperature 20 A Total (10A Each Diode Leg) Guard-Ring for Stress Protection High Surge Capacity Pb-Free Package · · · Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight (Approximately): 1.9 Grams (TO-220-3, TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximumfor 10 Seconds Applications · · · Power Supply Output Rectification Power Management Instrumentation TO-220-3 TO-220F-3 Figure 1. Package Types of MBR2045C Jul. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Pin Configuration T/TFPackage (TO-220-3/TO-220F-3) 3 A2 2 K 1 A1 A2 K A1 (Front View) Figure 3. Internal Structure of MBR2045C Figure 2. Pin Configuration of MBR2045C Ordering Information MBR2045C Package - Circuit Type E1: Lead Free Package T: TO-220-3 TF: TO-220F-3 Blank: Tube Part Number Marking ID Packing Type TO-220-3 MBR2045CT-E1 MBR2045CT-E1 Tube TO-220F-3 MBR2045CTF-E1 MBR2045CTF-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Absolute Maximum Ratings (Each Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC=139oC IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC=137oC IFRM 20 A Non Repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz) IRRM 1.0 A TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs ESD (Machine Model=C) >400 V ESD (Human Body Model=3B) >8000 V Operating Junction Temperature (Note 2) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA. Thermal Characteristics Parameter Maximum Thermal Resistance Symbol Condition RθJC Junction to Case RθJA Junction to Ambient Jul. 2008 Rev. 1. 1 Value TO-220-3 2.2 TO-220F-3 4.5 TO-220-3 60 Unit oC/W BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Electrical Characteristics (Each Diode Leg) Parameter Condition Symbol IF=10 A, TC=25oC Maximum Instantaneous Forward IF=10 A, TC=125oC Voltage Drop (Note 3) IF=20 A, TC=25oC VF IF=20 A, TC=125oC Maximum Instantaneous Reverse Current (Note 3) Rated DC Voltage, TC=125oC Rated DC Voltage, TC=25oC Typ Max 0.59 0.65 0.50 0.57 0.71 0.84 0.67 0.72 5 15 0.01 0.1 IR Unit V mA Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Jul. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Typical Performance Characteristics IF, Instantaneous Forward Current (A) 100 10 1 o 25 C o 125 C o 150 C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage 10 1 IR, Reverse Current (mA) 0.1 0.01 1E-3 o 25 C o 100 C o 125 C o 150 C 1E-4 1E-5 1E-6 1E-7 0 10 20 30 40 50 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Jul. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Typical Performance Characteristics (Continued) 1000 Capacitance (pF) 800 600 o TJ=25 C 400 200 0 0 10 20 30 40 VR, Reverse Voltage (V) Figure 6. Capacitance IF(AV), Average Foward Current (A) 14 12 10 8 6 Square 4 2 0 100 110 120 130 140 150 160 o Case Temperature ( C) Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode) Jul. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Mechanical Dimensions TO-220-3 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) 1.160(0.046) 1.760(0.069) 14.230(0.560) 16.510(0.650) φ1.500(0.059) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 1.850(0.073) 9.660(0.380) 10.660(0.420) φ3.560(0.140) 4.060(0.160) Unit: mm(inch) 3° 0.200(0.008) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) Jul. 2008 Rev. 1. 1 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Mechanical Dimensions (Continued) TO-220F-3 Unit: mm(inch) 9.800(0.385) 10.200(0.401) φ 4.400(0.173) 4.700(0.185) 3.100(0.122) 3.300(0.130) 2.700(0.106) 3.000(0.118) 3.400(0.134) 3.600(0.142) 7.000(0.275) 7.400(0.291) 15.800(0.621) 16.200(0.637) 2.700(0.106) 3.100(0.122) 2.000(0.079) 2.800(0.110) 13.000(0.511) 13.600(0.535) 1.200(0.047) 0.900(0.035) 1.200(0.047) 1 1.500(0.059) 2 3 0.650(0.026) 0.600(0.024) 0.800(0.031) 0.850(0.033) 2.550(0.100) 2.550(0.100) Jul. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 8 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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