FFPF08S60ST 8 A, 600 V STEALTHTM II Diode Features Description • Stealth Recovery trr = 30 ns (@ IF = 8 A) The FFPF08S60S is STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • RoHS Compliant Applications • General Purpose • SMPS • Boost Diode in Continuous Mode Power Factor Corrections • Power Switching Circuits Pin Assignments 1. Cathode 2. Anode Absolute Maximum Ratings T C Symbol 2 2. Anode 1 1. Cathode TO-220F-2L = 25°C unless otherwise noted Value Unit VRRM Peak Repetitive Reverse Voltage Parameter 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T C Symbol RJC @ TC = 95 C 8 A 80 A - 65 to +175 C = 25°C unless otherwise noted Parameter Maximum Thermal Resistance, Junction to Case Max. Unit 3.4 C/W Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF08S60STTU FFPF08S60ST TO-220F-2L Tube N/A N/A 50 ©2011 Fairchild Semiconductor Corporation FFPF08S60ST Rev. C2 1 www.fairchildsemi.com FFPF08S60ST — STEALTH™ II Diode November 2014 C = 25°C unless otherwise noted Parameter 1 Conditions Min. Typ. Max Unit IF = 8 A IF = 8 A TC = 25 C TC = 125 C - 2.1 1.6 2.6 - V V IR 1 VR = 600 V VR = 600 V TC = 25 C TC = 125 C - - 100 500 A A trr IF =1 A, diF/dt = 100 A/s, VR= 30 V TC = 25 C - - 25 ns trr Irr S factor Qrr IF =8 A, diF/dt = 200 A/s, VR = 390 V TC = 25 C - 19 2.2 0.6 21 30 - ns A trr Irr S factor Qrr IF =8 A, diF/dt = 200 A/s, VR= 390 V TC = 125 C - 58 4.3 1.3 125 - nC WAVL Avalanche Energy (L = 40 mH) 20 - - mJ VF nC ns A Notes: 1. Pulse : Test Pulse width = 300s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform ©2011 Fairchild Semiconductor Corporation FFPF08S60ST Rev. C2 2 www.fairchildsemi.com FFPF08S60ST — STEALTH™ II Diode Electrical Characteristics T C = 25°C unless otherwise noted Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current 100 REVERSE CURRENT, IR [A] FORWARD CURRENT, IF [A] 1E-4 o TC=125 C 10 o TC=25 C 1 o TC=75 C 0.1 0.0 1E-5 1E-6 0.8 1.2 1.6 2.0 2.4 2.8 o TC = 75 C 1E-7 o TC = 25 C 1E-8 1E-9 0.4 o TC = 125 C 3.2 0 100 200 FORWARD VOLTAGE, VF [V] Figure 5. Typical Junction Capacitance REVERSE RECOVERY TIME, trr [ns] JUNCTION CAPACITANCE, CJ [pF] 500 600 100 f = 1MHz 90 80 70 60 50 40 30 20 10 1 10 100 IF = 8A 90 80 70 o TC = 125 C 60 50 40 o TC = 75 C 30 20 o TC = 25 C 10 0 100 1000 200 REVERSE VOLTAGE, VR [V] AVERAGE FORWARD CURRENT, IF(AV) [A] IF =8A 8 7 6 5 o TC = 125 C o TC = 75 C 4 o TC = 25 C 3 2 1 0 100 200 300 400 FFPF08S60ST Rev. C2 500 12 11 10 9 8 7 6 DC 5 4 3 2 1 0 70 500 80 90 100 110 120 130 140 150 o CASE TEMPERATURE, TC [ C] diF/dt [A/s] ©2011 Fairchild Semiconductor Corporation 400 Figure 8. Forward Current Deration Curve 10 9 300 diF/dt [A/s] Figure 7. Typical Reverse Recovery Current REVERSE RECOVERY CURRENT, Irr [A] 400 Figure 6. Typical Reverse Recovery Time 100 0 300 REVERSE VOLTAGE, VR [V] 3 www.fairchildsemi.com FFPF08S60ST — STEALTH™ II Diode Typical Performance Characteristics T FFPF08S60ST — STEALTH™ II Diode Mechanical Dimensions Figure 9. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002. ©2011 Fairchild Semiconductor Corporation FFPF08S60ST Rev. C2 4 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I71 ©2011 Fairchild Semiconductor Corporation FFPF08S60ST Rev. C2 5 www.fairchildsemi.com FFPF08S60ST — STEALTH™ II Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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