ACE ACE9435B P-channel enhancement mode field effect transistor Datasheet

ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features




VDS(V)=-320V, ID=-5.24.1A
RDS(ON)=51mΩ @ VGS=-10V
RDS(ON)=68mΩ @ VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
-30
V
VGSS
±20
V
Gate-Source Voltage
O
Continuous TA=25 C
Drain Current (Note 1)
Pulsed
(Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Temperature Range
ID
PD
-5.2
-50
1.5
TJ,TSTG -55 to 150
A
W
O
C
Packaging Type
SOP-8
8
7
6
1
2
3
5
4
VER 1.2
1
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE9435B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
O
TA=25 C unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
-30
-36
Max.
Unit
Off characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=-250uA
V
Zero Gate Voltage Drain Current
IDSS
VDS=-24V, VGS=0V
0.02
-1
uA
Gate Leakage Current
IGSS
VGS=±20V, VDS=0V
±1.5
±100
nA
VGS=-10V, ID=-4.6A
51
60
VGS=-4.5V, ID=-2A
68
82
-1.46
-3
On characteristics
Drain-Source On-State Resistance
RDS(ON)
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
Forward Transconductance
gFS
VDS=-5V, ID=-6A
-1
12
mΩ
V
S
Switching
Turn-On Delay Time
Td(on)
Turn-Off Delay Time
td(off)
VDS=-15V,RL=2.5Ω
RGEN=3Ω, VGS=-10V
8.6
ns
28.2
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-15V, VGS=0V
f=1MHz
550
60
pF
50
Drain-source diode characteristics and maximum ratings
Diode Forward Voltage
VSD
VGS=0V, IS=-1A
-0.81
V
2
Note: 1. The value of PD is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based
on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
VER 1.2
2
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOP-8
Unit: mm
VER 1.2
4
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
5
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