ACE9435B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features VDS(V)=-320V, ID=-5.24.1A RDS(ON)=51mΩ @ VGS=-10V RDS(ON)=68mΩ @ VGS=-4.5V High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V VGSS ±20 V Gate-Source Voltage O Continuous TA=25 C Drain Current (Note 1) Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Temperature Range ID PD -5.2 -50 1.5 TJ,TSTG -55 to 150 A W O C Packaging Type SOP-8 8 7 6 1 2 3 5 4 VER 1.2 1 ACE9435B P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE9435B XX + H Halogen - free Pb - free FM : SOP-8 Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. -30 -36 Max. Unit Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA V Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V 0.02 -1 uA Gate Leakage Current IGSS VGS=±20V, VDS=0V ±1.5 ±100 nA VGS=-10V, ID=-4.6A 51 60 VGS=-4.5V, ID=-2A 68 82 -1.46 -3 On characteristics Drain-Source On-State Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Forward Transconductance gFS VDS=-5V, ID=-6A -1 12 mΩ V S Switching Turn-On Delay Time Td(on) Turn-Off Delay Time td(off) VDS=-15V,RL=2.5Ω RGEN=3Ω, VGS=-10V 8.6 ns 28.2 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V f=1MHz 550 60 pF 50 Drain-source diode characteristics and maximum ratings Diode Forward Voltage VSD VGS=0V, IS=-1A -0.81 V 2 Note: 1. The value of PD is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the DC thermal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. VER 1.2 2 ACE9435B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE9435B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOP-8 Unit: mm VER 1.2 4 ACE9435B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 5