MCC BZX84C10W Silicon 200 mwatt zener diode Datasheet

MCC
BZX84C2V4W
THRU
BZX84C39W
omponents
21201 Itasca Street Chatsworth
!"#
$ % !"#
Features
Silicon
l
Planar Die construction
l
200mW Power Dissipation
l
Zener Voltages from 2.4V - 39V
l
Ideally Suited for Automated Assembly Processes
200 mWatt
Zener Diodes
.
Mechanical Data
l
SOT-323
Case: SOT-23, Plastic
A
l
Terminals: solderable per MIL-STD-202, Methode 208
l
Weight: 0.008 grams (approx.)
C
Maximum Ratings @ 25oC Unless Otherwise Specified
Zener Current
IF
100
mA
Maximum Forward
VF
1.2
V
Voltage
Power Dissipation
P(AV)
200
mWatt
(Note 1)
Operation And
TJ , TSTG -55o C to
Storage
+150o C
Temperature
Peak Foreard Surge
IFSM
2.0
A
Current 8.3mS half
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or
equivalent square wave, duty cycle = 4 pulses per
minute maximum.
B
D
E
H
G
F
I
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
I
INCHES
MIN
.070
.078
.045
.047
--.0078
.035
.002
.010
MM
MIN
1.80
2.00
1.15
1.20
--.20
.90
.05
.25
MAX
.087
.087
.054
.056
.004
.0160
.044
.006
---
MAX
2.20
2.20
1.35
1.40
.10
.40
1.10
.15
---
NOTE
Suggested Solder
Pad Layout
.031
.800
.047
1.20
.024
.600
.118
3.00
.026
.650
.026
.650
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.075
1.90
inches
mm
MCC
BZX84C2V4W thru BZX84C39W
ELECTRICAL CHARACTERISTICS (TA=25 degree C unless otherwise noted) VF=1.2V max, IF=100mA for all types.
Type
Nimber
BZX84C2V4W
BZX84C2V7W
BZX84C3W
BZX84C3V3W
BZX84C3V6W
BZX84C3V9W
BZX84C4V3W
BZX84C4V7W
BZX84C5V1W
BZX84C5V6W
BZX84C6V2W
BZX84C6V8W
BZX84C7V5W
BZX84C8V2W
BZX84C9V1W
BZX84C10W
BZX84C11W
BZX84C12W
BZX84C13W
BZX84C15W
BZX84C16W
BZX84C18W
BZX84C20W
BZX84C22W
BZX84C24W
BZX84C27W
BZX84C30W
BZX84C33W
BZX84C36W
BZX84C39W
Marking
Code
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
Nominal Zener Voltage
Vz @ IzT
Nom. V Min. V Max. V
2.4
2.28
2.52
2.7
2.5
2.9
3
2.8
3.2
3.3
3.1
3.5
3.6
3.4
3.8
3.9
3.7
4.1
4.3
4
4.6
4.7
4.4
5
5.1
4.8
5.4
5.6
5.2
6
6.2
5.8
6.6
6.8
6.4
7.2
7.5
7
7.9
8.2
7.7
8.7
9.1
8.5
9.6
10
9.4
10.6
11
10.4
11.6
12
11.4
12.7
13
12.4
14.1
15
13.8
15.6
16
15.3
17.1
18
16.8
19.1
20
18.8
21.2
22
20.8
23.3
24
22.8
25.6
27
25.1
28.9
30
28
32
33
31
35
36
34
38
39
37
41
Max. Zener Impedance
ZzT @ IzT
Ohm
mA
100
5
100
5
95
5
95
5
90
5
90
5
90
5
80
5
60
5
40
5
10
5
15
5
15
5
15
5
15
5
20
5
20
5
25
5
30
5
30
5
40
5
45
5
55
5
55
5
70
5
80
5
80
5
80
5
90
5
130
5
ZzK @ IzK
Ohm
mA
600
1
600
1
600
1
600
1
600
1
600
1
600
1
500
1
480
1
400
1
150
1
80
1
80
1
80
1
100
1
150
1
150
1
150
1
170
1
200
1
200
1
225
1
225
1
250
1
250
1
300
1
300
1
325
1
350
1
350
1
Max.Reverse
Leakage Current
I R @ VR
uA
V
50
1
20
1
10
1
5.0
1
5.0
1
3.0
1
3.0
1
3.0
2
2.0
2.0
1.0
2.0
3.0
4.0
2.0
4.0
1.0
5
0.7
5
0.5
6
0.2
7.0
0.1
8.0
0.1
8.0
0.1
8.0
0.1
10.5
0.1
11.2
0.1
12.6
0.1
14.0
0.1
15.4
0.1
16.8
0.1
18.9
0.1
21.0
0.1
23.1
0.1
25.2
0.1
27.3
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body.
4.Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (IZT or IZK) is superimposed on IZT or IZK.
5.Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5.
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MCC
BZX84C2V4W thru BZX84C39W
8
100
TEMPERATURE COEFFICIENT,mV / oC)
TEMPERATURE COEFFICIENT,mV / oC)
7
6
5
4
3
10
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
11
1
10
12
100
NOMINAL ZENER VOLTAGE, Volts
NOMINAL ZENER VOLTAGE, Volts
TYPICAL REVERSE CURRENT
1000
TJ=25 C
IZ(AC)=0.1IZ(DC)
F=1 kHZ
O
IZ = 1 mA
FORWARD CURRENT, mA
DYNAMIC IMPEDANCE, W
1000
STEADY STATE POWER DERATING
100
5 mA
20 mA
10
100
150OC
10
O
75 C
25OC
1
1
10
1
0.4
100
0.5
0.6
O
5C
0.7
0.8
0.9
1.0
1.1
1.2
FORWARD VOLTAGE, Volts
NORMAL ZENER VOLTAGE, Volts
TYPICAL FORWARD VOLTAGE
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
1.2
1000
CAPACITANCE, pF
POWER DISSIPATION, Watts
o
0.8
0.6
0.4
PD V.S. TA
TA=25 C
0 V BIAS
1 V BIAS
1.0
100
BIAS AT
50% OF VZ NOM
10
0.2
0
25
50
75
100
125
150
o
TEMPERATURE ( C)
STEADY STATE POWER DERATING
155
1
1
10
NOMINAL ZENER VOLTAGE, Volts
TYPICAL CAPACITANCE
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100
MCC
BZX84C2V4W thru BZX84C39W
100
100
o
o
TA=25 C
10
ZENER CURRENT, mA
ZENER CURRENT, mA
TA=25 C
1
0.1
0.01
0
2
4
6
8
10
12
ZENER VOLTAGE, Volts
10
1
0.1
0.01
10
30
50
ZENER VOLTAGE V.S. ZENER CURRENT
LEAKAGE CURRENT (mA)
1000
100
10
1
+150OC
0.1
0.01
0.001
+25OC
0.0001
-55OC
0
10
20
30
40
50
60
90
ZENER VOLTAGE, Volts
ZENER VOLTAGE V.S. ZENER CURRENT
0.00001
70
70
80
90
NOMINAL ZENER VOLTAGE, Vlots
TYPICAL LEAKGE CURRENT
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