GSG GFC9210 P channel power mosfet Datasheet

Gunter Semiconductor GmbH
GFC9210
P Channel Power MOSFET
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃
℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
Mechanical Data:
D34
Dimension 1.75mm x 2.41mm
400 µm
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting: Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
5 mil Al
Source Bonding Wire:
Absolute Maximum Rating
Characteristics
@Ta=25℃
℃
Symbol
Limit
Unit
Test Conditions
-V(BR)DSS
200
V
− VGS=0V, -ID=250µΑ
Static Drain-to - Source On-resistance
RDS(ON)
3
Ω
− VGS=10V, - ID=0.9Α
Continuous Drain current ( in target package)
--ID@25℃
1.75
A
- VGS=10V
Continuous Drain current ( in target package)
--ID@100℃
1
A
- VGS=10V
Tj
-55~150
℃
TSTR
-55~150
℃
PD
20
W
Drain-to-Source Breakdown Voltage
Operation Junction Temperatre
Storage Temperature
Target Device: IRF9610
TO-220AB
@Tc=25℃
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