Hitachi HN29WB800R-12 1048576-word x 8-bit / 524288-word x 16-bit cmos flash memory Datasheet

HN29WT800 Series
HN29WB800 Series
1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory
ADE-203-537A(Z)
Rev. 1.0
May. 9, 1997
Description
The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash
Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic
Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low
power and high performance systems such as mobile, personal computing and communication products.
Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Access time: 80/100/120 ns (max)
• Low power dissipation:
 ICC = 30 mA (max) (Read)
 ICC = 200 µA (max) (Standby)
 ICC = 40 mA (max) (Program)
 ICC = 40 mA (max) (Erase)
 ICC = 1 µA (typ) (Deep powerdown)
• Automatic page programming:
 Programming time: 25 ms (typ)
 Program unit: 128 word
• Automatic erase:
 Erase time: 50 ms (typ)
 Erase unit: Boot block; 8-kword/16-kbyte × 1
Parameter block; 4-kword/8-kbyte × 2
Main block; 16-kword/32-kbyte × 1
32-kword/64-kbyte × 15
This product is compatible with M5M29FB/T800xx by Ltd. Mitsubishi.
HN29WT800 Series, HN29WB800 Series
• Block boot:
 HN29WT800 Series: Top boot
 HN29WB800 Series: Bottom boot
• Program/Erase endurance
 10,000 cycles
• Other functions:
 Software command control
 Selective block lock
 Program suspend/Resume
 Erase suspend/Resume
 Status register read
• Compatible with M5M29FB/T800xx by Ltd. Mitsubishi
Ordering Information
Type No.
Access time
Package
HN29WT800T-8
HN29WT800T-10
HN29WT800T-12
80 ns
100 ns
120 ns
12 × 20.0 mm 2 48-pin plastic TSOP I (TFP-48D)
HN29WB800T-8
HN29WB800T-10
HN29WB800T-12
80 ns
100 ns
120 ns
HN29WT800R-8
HN29WT800R-10
HN29WT800R-12
80 ns
100 ns
120 ns
HN29WB800R-8
HN29WB800R-10
HN29WB800R-12
80 ns
100 ns
120 ns
2
12 × 20.0 mm 2 48-pin plastic TSOP I (Reverse)
(TFP-48DR)
HN29WT800 Series, HN29WB800 Series
Pin Arrangement
HN29WT800T Series
HN29WB800T Series
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RP
NC
WP
RDY/Busy
A18
A17
A7
A6
A5
A4
A3
A2
A1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
BYTE
V SS
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
V SS
CE
A0
(Top view)
HN29WT800R Series
HN29WB800R Series
A16
BYTE
V SS
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
VSS
CE
A0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RP
NC
WP
RDY/Busy
A18
A17
A7
A6
A5
A4
A3
A2
A1
(Top view)
3
HN29WT800 Series, HN29WB800 Series
Pin Description
Pin name
Function
A-1 to A18
Address
I/O0 to I/O15
Input/output
CE
Chip enable
OE
Output enable
WE
Write enable
RP
Reset/Powerdown
RDY/Busy
Ready/Busy
WP
Write protect
BYTE
Byte enable
VCC
Power supply
VSS
Ground
NC
No connection
4
HN29WT800 Series, HN29WB800 Series
Block Diagram
128-word page buffer
A8 to A18
X-address
buffer
X-decorder
A0 to A7
Y-address
buffer
Y-decorder
Boot block 8-kword
Parameter block 1 4-kword
Parameter block 2 4-kword
Main block 16-kword
Main block 32-kword
.
.
Main block 32-kword
Y-gate /Sens AMP.
Status/ ID register
Multiplexer
CE
OE
WE
WP
RP
BYTE
CUI
WSM
Input/output buffers
RDY/Busy
V CC
V SS
I/O0
I/O15/A-1
CUI: Command User Interface
WSM: Write State Machine
5
HN29WT800 Series, HN29WB800 Series
Memory Map
HN29WB800 Series Memory Map
HN29WT800 Series Memory Map
× 8 (Byte mode)
× 16 (Word mode)
× 8 (Byte mode)
× 16 (Word mode)
FC000H to FFFFFH
7E000H to 7FFFFH
8-kword boot block
F0000H to FFFFFH
78000H to 7FFFFH
32-kword main block
FA000H to FBFFFH
7D000H to 7DFFFH
4-kword parameter block
E0000H to EFFFFH
70000H to 77FFFH
32-kword main block
F8000H to F9FFFH
7C000H to 7CFFFH
4-kword parameter block
D0000H to DFFFFH
68000H to 6FFFFH
32-kword main block
F0000H to F7FFFH
78000H to 7BFFFH
16-kword main block
C0000H to CFFFFH
60000H to 67FFFH
32-kword main block
E0000H to EFFFFH
70000H to 77FFFH
32-kword main block
B0000H to BFFFFH
58000H to 5FFFFH
32-kword main block
D0000H to DFFFFH
68000H to 6FFFFH
32-kword main block
A0000H to AFFFFH
50000H to 57FFFH
32-kword main block
C0000H to CFFFFH
60000H to 67FFFH
32-kword main block
90000H to 9FFFFH
48000H to 4FFFFH
32-kword main block
B0000H to BFFFFH
58000H to 5FFFFH
32-kword main block
80000H to 8FFFFH
40000H to 47FFFH
32-kword main block
A0000H to AFFFFH
50000H to 57FFFH
32-kword main block
70000H to 7FFFFH
38000H to 3FFFFH
32-kword main block
90000H to 9FFFFH
48000H to 4FFFFH
32-kword main block
60000H to 6FFFFH
30000H to 37FFFH
32-kword main block
80000H to 8FFFFH
40000H to 47FFFH
32-kword main block
50000H to 5FFFFH
28000H to 2FFFFH
32-kword main block
70000H to 7FFFFH
38000H to 3FFFFH
32-kword main block
40000H to 4FFFFH
20000H to 27FFFH
32-kword main block
60000H to 6FFFFH
30000H to 37FFFH
32-kword main block
30000H to 3FFFFH
18000H to 1FFFFH
32-kword main block
50000H to 5FFFFH
28000H to 2FFFFH
32-kword main block
20000H to 2FFFFH
10000H to 17FFFH
32-kword main block
40000H to 4FFFFH
20000H to 27FFFH
32-kword main block
10000H to 1FFFFH
08000H to 0FFFFH
32-kword main block
30000H to 3FFFFH
18000H to 1FFFFH
32-kword main block
08000H to 0FFFFH
04000H to 07FFFH
16-kword main block
20000H to 2FFFFH
10000H to 17FFFH
32-kword main block
06000H to 07FFFH
03000H to 03FFFH
4-kword parameter block
10000H to 1FFFFH
08000H to 0FFFFH
32-kword main block
04000H to 05FFFH
02000H to 02FFFH
4-kword parameter block
00000H to 0FFFFH
00000H to 07FFFH
32-kword main block
00000H to 03FFFH
00000H to 01FFFH
8-kword boot block
A-1 to A18 (Byte mode) A0 to A18 (Word mode)
6
A-1 to A18 (Byte mode) A0 to A18 (Word mode)
HN29WT800 Series, HN29WB800 Series
Top Boot Block Address Map*1
Address
Size
Block
A18
A17
A16
A15
A14
A13
A12
× 8 (Byte mode)
× 16 (Word mode)
Block18
1
1
1
1
1
1
×
16-kbyte
8-kword
Block17
1
1
1
1
1
0
1
8-kbyte
4-kword
Block16
1
1
1
1
1
0
0
8-kbyte
4-kword
Block15
1
1
1
1
0
×
×
32-kbyte
16-kword
Block14
1
1
1
0
×
×
×
64-kbyte
32-kword
Block13
1
1
0
1
×
×
×
64-kbyte
32-kword
Block12
1
1
0
0
×
×
×
64-kbyte
32-kword
Block11
1
0
1
1
×
×
×
64-kbyte
32-kword
Block10
1
0
1
0
×
×
×
64-kbyte
32-kword
Block9
1
0
0
1
×
×
×
64-kbyte
32-kword
Block8
1
0
0
0
×
×
×
64-kbyte
32-kword
Block7
0
1
1
1
×
×
×
64-kbyte
32-kword
Block6
0
1
1
0
×
×
×
64-kbyte
32-kword
Block5
0
1
0
1
×
×
×
64-kbyte
32-kword
Block4
0
1
0
0
×
×
×
64-kbyte
32-kword
Block3
0
0
1
1
×
×
×
64-kbyte
32-kword
Block2
0
0
1
0
×
×
×
64-kbyte
32-kword
Block1
0
0
0
1
×
×
×
64-kbyte
32-kword
0
0
0
0
×
×
×
64-kbyte
32-kword
Block0
Note:
1. × can be VIH. Address except block address must be V IH.
7
HN29WT800 Series, HN29WB800 Series
Bottom Boot Block Address Map*1
Address
Size
Block
A18
A17
A16
A15
A14
A13
A12
× 8 (Byte mode)
× 16 (Word mode)
Block18
1
1
1
1
×
×
×
64-kbyte
32-kword
Block17
1
1
1
0
×
×
×
64-kbyte
32-kword
Block16
1
1
0
1
×
×
×
64-kbyte
32-kword
Block15
1
1
0
0
×
×
×
64-kbyte
32-kword
Block14
1
0
1
1
×
×
×
64-kbyte
32-kword
Block13
1
0
1
0
×
×
×
64-kbyte
32-kword
Block12
1
0
0
1
×
×
×
64-kbyte
32-kword
Block11
1
0
0
0
×
×
×
64-kbyte
32-kword
Block10
0
1
1
1
×
×
×
64-kbyte
32-kword
Block9
0
1
1
0
×
×
×
64-kbyte
32-kword
Block8
0
1
0
1
×
×
×
64-kbyte
32-kword
Block7
0
1
0
0
×
×
×
64-kbyte
32-kword
Block6
0
0
1
1
×
×
×
64-kbyte
32-kword
Block5
0
0
1
0
×
×
×
64-kbyte
32-kword
Block4
0
0
0
1
×
×
×
64-kbyte
32-kword
Block3
0
0
0
0
1
×
×
32-kbyte
16-kword
Block2
0
0
0
0
0
1
1
8-kbyte
4-kword
Block1
0
0
0
0
0
1
0
8-kbyte
4-kword
Block0
0
0
0
0
0
0
×
16-kbyte
8-kword
Note:
8
1. × can be VIH. Address except block address must be V IH.
HN29WT800 Series, HN29WB800 Series
Mode Selection
Word Mode (BYTE = VIH)
Mode
Pin
CE
OE
WE
RP
RDY/Busy
Read
Array
VIL
VIL
VIH
VIH
VOH (High-Z) Dout
Status register
VIL
VIL
VIH
VIH
×* 5
Status Register Data
VIL
VIL
VIH
VIH
×
Lock bit data (I/O6)
VIL
VIL
VIH
VIH
VOH (High-Z) 07H
VIL
VIL
VIH
VIH
VOH (High-Z) 85H / 86H*6
VIL
VIH
VIH
VIH
×
High-Z
VIH
×*
×*
VIH
×
High-Z
Program
VIL
VIH
VIL
VIH
×
Command/Data in
Erase
VIL
VIH
VIL
VIH
×
Command
Others
VIL
VIH
VIL
VIH
×
Command
×
×
×
VIL
VOH (High-Z) High-Z
Lock bit status
1
Identifier (Maker)* , *
1
2
Identifier (Device)* , *
Output disable
Standby
4
Command write*
Deep powerdown
3
5
5
I/O0 to I/O15
Notes: 1. The command programming mode is used to output the identifier code. Refer to the table of
Software Command Definition.
2. A0 = VIL
3. A0 = VIH
4. Refer to the table of Software Command Definition. Programming and erase operation begins after
mode setting by command input.
5. × can be VIL or VIH for control pins, and VOL or VOH (High-Z) for RDY/Busy pin. The RDY/Busy is an
open drain output pin and indicates status of the internal WSM. When low, it indicates the WSM is
Busy performing an operation. A pull-up resistor of 10 k to 100 k Ω is required to allow the
RDY/Busy signal to transition high indicating a Ready WSM condition.
6. 85H: HN29WT800 Series, 86H: HN29WB800 Series.
9
HN29WT800 Series, HN29WB800 Series
BYTE Mode (BYTE = VIL )
Mode
Pin
CE
OE
WE
RP
RDY/Busy
Read
Array
VIL
VIL
VIH
VIH
VOH (High-Z) Dout
Status register
VIL
VIL
VIH
VIH
×* 5
Status Register Data
VIL
VIL
VIH
VIH
×
Lock bit data (I/O6)
VIL
VIL
VIH
VIH
VOH (High-Z) 07H
VIL
VIL
VIH
VIH
VOH (High-Z) 85H / 86H*6
VIL
VIH
VIH
VIH
×
High-Z
VIH
×*
×*
VIH
×
High-Z
Program
VIL
VIH
VIL
VIH
×
Command/Data in
Erase
VIL
VIH
VIL
VIH
×
Command
Others
VIL
VIH
VIL
VIH
×
Command
×
×
×
VIL
VOH (High-Z) High-Z
Lock bit status
1
Identifier (Maker)* , *
1
2
Identifier (Device)* , *
Output disable
Standby
4
Command write*
Deep powerdown
3
5
5
I/O0 to I/O7
Notes: 1. The command programming mode is used to output the identifier code. Refer to the table of
Software Command Definition.
2. A0 = VIL
3. A0 = VIH
4. Refer to the table of Software Command Definition. Programming and erase operation begins after
mode setting by command input.
5. × can be VIL or VIH for control pins, and VOL or VOH (High-Z) for RDY/Busy pin. The RDY/Busy is an
open drain output pin and indicates status of the internal WSM. When low, it indicates the WSM is
Busy performing an operation. A pull-up resistor of 10 k to 100 k Ω is required to allow the
RDY/Busy signal to transition high indicating a Ready WSM condition.
6. 85H: HN29WT800 Series, 86H: HN29WB800 Series.
10
HN29WT800 Series, HN29WB800 Series
Software Command Definition
First bus cycle
Second bus cycle
Third bus cycle
Data
Data
Data
Operati on
(I/O7 to Operati on
(I/O7
Operati on
(I/O7
mode
Address I/O0)*1 mode
Address to I/O0) mode
Address to I/O0)
Command
Read array (memory) Write
×
FFH
Read identifier codes Write
×
90H
Read
IA*2
ID*2
Read status register
Write
×
70H
Read
×
SRD*3
Clear status register
Write
×
50H
Write
×
41H
Write
WA0*4
WD0*4
Block erase
Write
×
20H
Suspend
Write
×
B0H
Resume
Write
×
D0H
Read lock bit status
Write
×
Lock bit
program/confirm
Write
Erase all unlocked
blocks
Write
Page program*
5
6
Write
BA*
71H
Read
BA
I/O6* 7
×
77H
Write
BA
D0H
×
A7H
Write
×
D0H
Write
WA1
WD1
D0H
Notes: 1. In the word mode, upper byte data (I/O8 to I/O15) is ignored.
2. IA = Identifier address, A0 = VIL (Manufacture code), A0 = VIH (Device code), ID = ID code,
BYTE = VIL: A-1, A1 to A18 = VIL, BYTE = VIH: A1 to A18 = VIL.
3. SRD = Status register data
4. WA = Write address, WD = Write data
5. BYTE = VIL: Write address and write data must be provided sequentially from 00H to FFH for A-1
to A6. Page size is 256 byte (256-byte × 8-bit).
BYTE = VIH: Write address and write data must be provided sequentially from 00H to 7FH for A0 to
A6. Page size is 128 word (128-word × 16-bit).
6. BA = Block address (A12 to A18), (Addresses except block address must be VIH)
7. I/O6 provides block lock status, I/O6 = 1: Block unlocked, I/O6 = 0: Block locked.
11
HN29WT800 Series, HN29WB800 Series
Block Locking
RP
WP
Lock bit (internally) Write protection provided
VIL
×
×
All blocks locked (Deep powerdown mode)
VHH
×
×
All blocks unlocked
VIH
VIL
0
Blocks locked (Depend on lock bit data)
VIH
VIL
1
Blocks unlocked (Depend on lock bit data)
VIH
VIH
×
All blocks unlocked
Note: I/O6 provided lock status of each block after writing the Read lock status command (71H). WP pin
must not be switched during performing Read/Write operations or WSM busy (WSMS = 0).
Status Register Data (SRD)
Symbol
Function
Definition
SR. 7 (I/O7)
Write state machine status 1 = Ready
0 = Busy
SR. 6 (I/O6)
Suspend status
1 = Suspend
0 = Operation in progress/completed
SR. 5 (I/O5)
Erase status
1 = Error
0 = Successful
SR. 4 (I/O4)
Program status
1 = Error
0 = Successful
SR. 3 (I/O3)
Block status after program 1 = Error
0 = Successful
SR. 2 (I/O2)
Reserved
SR. 1 (I/O1)
Reserved
SR. 0 (I/O0)
Reserved
The function and the definition for these bits are to be
determined. These bits should be masked out when the
status register is polled.
Note: The RDY/Busy is an open dran output pin and indicates status of the internal WSM. When low, it
indicates that the WSM is Busy performing an operation. A pull-up resistor of 10k Ω to 100k Ω is
required to allow the RDY/Busy signal to transition high indicating a Ready WSM condition.
I/O3 indicates the block status after the page programming. When I/O3 is High, the page has the overprogrammed cell. If over-program occures, the device is block failed. However, if I/O3 is High, please
try the block erase to the block. The block may revive.
12
HN29WT800 Series, HN29WB800 Series
Device Identifier Mode
The device identifier mode allows the reading out of binary codes that identify manufacturer and type of
device, from outputs of Flash Memory. By this mode, the device will be automatically matched its own
corresponding erase and programming algorithm.
HN29WT800 Series, HN29WB800 Series Identifier Code
Pins
A0
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Hex. data
Manufacturer code
0
0
0
0
0
0
1
1
1
07H
Device code (T series)
1
1
0
0
0
0
1
0
1
85H
Device code (B series)
1
1
0
0
0
0
1
1
0
86H
Notes: 1. Device identifier code can be read out by using the read identified codes command.
2. In the word mode, the same data as I/O7 to I/O0 is read out from I/O15 to I/O8.
3. A9 = VHH mode. A9 = 11.5 V to 13.0 V. Set A9 to VHH min 200 ns before falling edge of CE in ready
status. Min 200 ns after return to V HH, device can’t be accessed. A1 to A8, A10 to A18, CE, OE, =
VIL, WE = VIH, I/O15/A-1 = VIL (BYTE = L).
Operations of the HN29WT800 Series, HN29WB800 Series
The HN29WT800 Series, HN29WB800 Series include on-chip program/erase control circuitry. The Write
State Machine (WSM) controls block erase and page program operations. Operational modes are selected by
the commands written to the Command User Interface (CUI). The Status Register indicates the status of the
WSM and when the WSM successfully completes the desired program or block erase operation. A Deep
Powerdown mode is enabled when the RP pin is at VSS minimizing power consumption.
Read: The HN29WT800 Series, HN29WB800 Series have three read modes, which accesses to the memory
array, the Device Identifier and the Status Register. The appropriate read command are required to be written
to the CUI. Upon initial device powerup or after exit from deep powerdown, the HN29WT800 Series,
HN29WB800 Series automatically reset to read array mode. In the read array mode, low level input to CE
and OE, high level input to WE and RP, and address signals to the address inputs (A0 to A18) output the data
of the addressed location to the data input/output (I/O0 to I/O15).
Write: Writes to the CUI enable reading of memory array data, device identifiers and reading and clearing of
the Status Register, they also enable block erase and program. The CUI is written by bringing WE to low
level, while CE is at low level and OE is at high level. Addresses and data are latched on the earlier rising
edge of WE and CE. Standard micro-processor write timings are used.
Output Disable: When O E is at V IH, output from the device is disabled. Data input/output are in a high
impedance (High-Z) state.
13
HN29WT800 Series, HN29WB800 Series
Standby: When CE is at VIH, the device is in the standby mode and its power consumption is reduced. Data
input/output are in a high impedance (High-Z) state. If the memory is deselected during block erase or
program, the internal control circuits remain active and the device consume normal active power until the
operation completes.
Deep Powerdown: When RP is at VIL , the device is in the deep powerdown mode and its power
consumption is substantially low. During read modes, the memory is deselected and the data input/output are
in a high impedance (High-Z) state. After return from powerdown, the CUI is reset to Read Array and the
Status Register is cleared to value 80H. During block erase or program modes, RP low will abort either
operation. Memory array data of the block being altered become invalid.
Functional Description
The device operations are selected by writing specific software command into the CUI.
Read Array Command (FFH): The device is in read array mode on initial device power up and after exit
from deep power down, or by writing FFH to the CUI. The device remains in Read Array mode until the
other commands are written.
Read Device Identifier Command (90H): Though PROM programmers can normally read device identifier
codes by raising A9 to high voltage, multiplexing high voltage onto address lines is not desired for microprocessor system. It is an other means to read device identifier codes that Read Device Identifier Code
Command (90H) is written to the command latch. Following the write of the Read Device Identifier
command of 90H, the manufacturer code and the device code can be read from addresses 00000H and
00001H, respectively.
Read Status Register Command (70H): The Status Register is read after writing the read status register
command of 70H to the CUI. The contents of Status Register are latched on the later falling edge of OE or
CE. So CE or OE must be toggled every status read.
Clear Status Register Command (50H): The Erase Status and Program Status bits are set to High by the
Write State Machine and can be reset by the Clear Status Register command of 50H. These bits indicates
various failure conditions.
Block Erase/Confirm Command (20H/D0H): Automated block erase is initiated by writing the Block
Erase of 20H followed by the Confirm command of D0H. An address within the block to be erased is
required. The WSM executes iterative erase pulse application and erase verify operation.
Suspend/Resume Command (B0H/D0H): Writing the suspend command of B0H during block erase
operation interrupts the block erase operation and allows read out from another block of memory. Writing the
suspend command of B0H during program operation interrupts the program operation and allows read out
from another block of memory. The device continues to output status register data when read, after the
suspend command is written to it. Polling the WSM status and suspend status bits will determine when the
erase operation or program operation has been suspended. At this point, writing of the read array command to
the CUI enables reading data from blocks other than that which is suspended. When the resume command of
D0H is written to the CUI, the WSM will continue with the erase or program processes.
14
HN29WT800 Series, HN29WB800 Series
Page Program Command (41H): Page program allows fast programming of 128-word of data. Writing of
41H initiates the page program operation. From 2nd cycle to 129th cycle write data must be serially inputted.
Address A6 to A0 have to be incremented from 00H to 7FH. After completion of data loading, the WSM
controls the program pulse application and verify operation. Basically re-program must not be done on a page
which has already programmed.
Data Protection: The HN29WT800 Series, HN29WB800 Series provide selective block locking of memory
blocks. Each block has an associated nonvolatile lock-bit which determines the lock status of the block. In
addition, the HN29WT800 Series, HN29WB800 Series have a master write protect pin (WP) which prevents
any modifications to memory blocks whose lock-bits are set to Low, when WP is low. When WP is high or
RP is V HH , all blocks can be programmed or erased regardless of the state of lock-bits, and the lock-bits are
cleared to High by erase.
Power Supply Voltage: A delay time of 2 µs is required before any device operation is initiated. The delay
time is measured from the time VCC reaches VCC min (3.0 V). During powerup, RP = V SS is recommended.
Falling in Busy status is not recommended for possibility of damaging the device.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Notes
VCC voltage
VCC
–0.2 to +4.6
V
1
All input and output voltages except V CC, A9,
RP
Vin, Vout
–0.6 to +4.6
V
1, 2
A9, RP supply voltage
VHH, VID
–0.6 to +14.0
V
1, 2
Operating temperature range
Topr
0 to +70
˚C
Storage temperature range
Tstg
–65 to +125
˚C
Storage temperature under bias
Tbias
–10 to +80
˚C
Notes: 1. Relative to VSS .
2. Minimum DC voltage is –0.5 V on input/output pins. During transition, this level may undershoot to
–2.0 V for periods < 20 ns. Maximum DC voltage on input/output pins are VCC +0.5 V which, during
transitions, may overshoot to V CC +1.5 V for periods < 20 ns.
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance
Cin
—
—
8
pF
Vin = 0 V
Output capacitance
Cout
—
—
12
pF
Vout = 0 V
15
HN29WT800 Series, HN29WB800 Series
DC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to +70˚C)
Parameter
Symbol Min
Typ
Max
Unit
Test conditions
Input leakage current
I LI
–1
—
1
µA
Vin = VSS to V CC
Output leakage current
I LO
–10
—
10
µA
Vout = VSS to V CC
Standby V CC current
I SB1
—
50
200
µA
Vin = VIH/V IL, CE = RP = WP = VIH
I SB2
—
1
5
µA
Vin = VSS or VCC ,
CE = RP = WP = VCC ± 0.3 V
I SB3
—
5
15
µA
Vin = VIH/V IL, RP = VIL
I SB4
—
1
5
µA
Vin = VSS or VCC, RP = VSS ± 0.3 V
Read VCC current
I CC1
—
7
30
mA
Vin = VIH/V IL, CE = VIL,
RP = OE = VIH, f = 10 MHz,
Iout = 0 mA
Write VCC current
I CC2
—
—
30
mA
Vin = VIH/V IL, CE = WE = VIL,
RP = OE = VIH
Programming VCC current
I CC3
—
—
40
mA
Vin = VIH/V IL, CE = RP = WP = VIH
Erasing VCC current
I CC4
—
—
40
mA
Vin = VIH/V IL, CE = RP = WP = VIH
Suspend VCC current
I CC5
—
—
200
µA
Vin = VIH/V IL, CE = RP = WP = VIH
RP all block unlocked current
I RP
—
—
100
µA
RP = VHH max
A9 intelligent identifier current
I ID
—
—
100
µA
A9 = VID max
A9 intelligent identifier voltage VID
11.4
12.0
12.6
V
RP unlocked voltage
VHH
11.4
12.0
12.6
V
Input voltage
VIL
–0.5
—
0.8
V
VIH
2.0
—
VCC + 0.5 V
VOL
—
—
0.45
V
I OL = 5.8 mA
VOH1
0.85 ×
VC C
—
—
V
I OH = –2.5 mA
VOH2
VCC - 0.4 —
—
V
I OH = –100 µA
VLKO
1.2
—
V
Deep powerdown V CC current
Output voltage
2
Low VCC lock-out voltage*
—
Notes: 1. All currents are RMS unless otherwise noted. Typical values at VCC = 3.3 V, Ta = 25˚C.
2. To protect initiation of write cycle during V CC powerup/powerdown, a write cycle is locked out for VCC
less than V LKO. If VCC is less than VLKO Write State Machine is reset to read mode. When the Wirte
State Machine is in Busy state, if V CC is less than VLKO, the alternation of memory contents may
occur.
16
HN29WT800 Series, HN29WB800 Series
AC Characteristics (VCC = 3.3 V ± 0.3 V, Ta = 0 to +70˚C)
Test Conditions
•
•
•
•
•
•
Input pulse levels: VIL = 0 V, V IH = 3.0 V
Input rise and fall time: ≤ 10 ns (HN29WT/WB800-10/12 Series)
: ≤ 5 ns (HN29WT/WB800-8 Series)
Output load: 1 TTL gate +100 pF (Including scope and jig.) (HN29WT/WB800-10/12 Series)
: 1 TTL gate +30 pF (Including scope and jig.) (HN29WT/WB800-8 Series)
Reference levels for measuring timing: 1.5 V
VCC Powerup/Powerdown Timing
Parameter
Symbol
Min
Typ
Max
Unit
RP = VIH setup time from VCC min
t VCS
2
—
—
µs
Note: During powerup/powerdown, by the noise pulses on control pins, the device has possibility of
accidental erasure or programming. The device must be protected against initiation of write cycle for
memory contents during powerup/powerdown. The delay time of min 2 µs is always required before
read operation or write operation is initiated from the time VCC reaches VCC min during
powerup/powerdown. By holding RP V IL, the contents of memory is protected during VCC
powerup/powerdown. During powerup, RP must be held V IL for min 2 µs from the time VCC reaches VCC
min. During powerdown, RP must be held V IL until V CC reaches VSS. RP doesn’t have latch mode, so
RP must be held V IH during read operation or erase/program operation.
Read/Write inhibit
Read/Write inhibit
Read/Write inhibit
VCC
t VCS
RP
CE
t PS
t PS
WE
17
HN29WT800 Series, HN29WB800 Series
Read Operation
HN29WT800/HN29WB800
-8
-10
-12
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Read cycle time
t RC
80
—
100
—
120
—
ns
Address to output delay
t ACC
—
80
—
100
—
120
ns
CE to output delay
t CE
—
80
—
100
—
120
ns
t OE
—
40
—
50
—
60
ns
t DF
—
25
—
25
—
30
ns
t OH
0
—
0
—
0
—
ns
OE hold from WE high Status register t OEH
read in busy
80
—
100
—
120
—
ns
OE hold from WE high Other read
t OEH
0
—
0
—
0
—
ns
RP recovery time before read
t PS
500
—
500
—
500
—
ns
RP low to output High-Z
t PHZ
—
150
—
150
—
300
ns
CE low to BYTE high or low
t BCD
—
5
—
5
—
5
ns
Address to BYTE high or low
t BAD
—
5
—
5
—
5
ns
BYTE to output delay
t BYTE
—
80
—
100
—
120
ns
BYTE low to output High-Z
t BHZ
—
25
—
25
—
30
ns
OE to output delay
CE or OE high to output float *
1
Address to output hold
Notes: 1. t DF is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
2. Timing measurements are made under read timing waveform.
18
HN29WT800 Series, HN29WB800 Series
Read Timing Waveform (Byte Mode or Word Mode)
Address
Address valid
t RC
CE
t DF
OE
t OEH
t OE
WE
t CE
t OH
t ACC
I/O
Output valid
t PS
t PHZ
RP
19
HN29WT800 Series, HN29WB800 Series
Read Timing Waveform (Byte Mode, Word Mode Switch)
Address valid
A0 to A18
Address valid
t ACC
t DF
CE
t CE
t OE
OE
t BAD
t BYTE
BYTE
t BYTE
t OH
t BCD
High-Z
t BAD
Output valid
I/O0 to I/O7
Valid
Output valid
t BHZ
t ACC
High-Z
Valid
I/O8 to I/O14
I/O15/A-1
A-1
I/O15
Note: When BYTE = High, CE = OE = Low, I/O15/A-1 is output status.
At this time, input signal must not be applied.
20
A-1
HN29WT800 Series, HN29WB800 Series
Command Write Operation
HN29WT800/HN29WB800
-8
-10
-12
Parameter
Symbol Min
Typ
Max Min
Typ
Max Min
Typ
Max Unit
Write cycle time
t WC
80
—
—
100
—
—
120
—
—
ns
Address setup time
t AS
50
—
—
50
—
—
50
—
—
ns
Address hold time
t AH
10
—
—
10
—
—
10
—
—
ns
Data setup time
t DS
50
—
—
50
—
—
50
—
—
ns
Data hold time
t DH
10
—
—
10
—
—
10
—
—
ns
CE setup time
t CS
0
—
—
0
—
—
0
—
—
ns
CE hold time
t CH
0
—
—
0
—
—
0
—
—
ns
Write pulse width
t WP
60
—
—
60
—
—
60
—
—
ns
Write pulse high time
t WPH
20
—
—
20
—
—
20
—
—
ns
WE setup time
t WS
0
—
—
0
—
—
0
—
—
ns
WE hold time
t WH
0
—
—
0
—
—
0
—
—
ns
CE pulse width
t CEP
60
—
—
60
—
—
60
—
—
ns
CE pulse high time
t CEPH
20
—
—
20
—
—
20
—
—
ns
Duration of program operation
t DAP
—
25
80
—
25
80
—
25
80
ms
Duration of block erase operation
t DAE
—
50
600
—
50
600
—
50
600
ms
BYTE high or low setup time
t BS
50
—
—
50
—
—
50
—
—
ns
BYTE high or low hold time
t BH
80
—
—
100
—
—
120
—
—
ns
RP high recovery to WE low
t PS
500
—
—
500
—
—
500
—
—
ns
Block lock setup to write enable
high
t BLS
80
—
—
100
—
—
120
—
—
ns
t WPS
80
—
—
100
—
—
120
—
—
ns
t BLH
0
—
—
0
—
—
0
—
—
ns
t WPH
0
—
—
0
—
—
0
—
—
ns
WE high to RDY/Busy low
t WHRL
—
—
80
—
—
100
—
—
120
ns
CE high to RDY/Busy low
t EHRL
—
—
80
—
—
100
—
—
120
ns
Block lock hold from valid SRD
Note: Read operation parameters during command write operations mode are the same as during read timing
waveform. Typical values at VCC = 3.3 V, Ta = 25˚C.
21
HN29WT800 Series, HN29WB800 Series
Erase and Program Performance
Parameter
Min
Typ
Max
Unit
Main block write time (Page mode)
—
6.4
20.4
s
Page write time
—
25
80
ms
Block erase time
—
50
600
ms
Note: Typical values at V CC = 3.3 V, Ta = 25˚C. These values exclude system level overhead.
Page Program Timing Waveform (WE control)
Page program
A7 to A18
Read status
Write read
register array command
Address valid
BYTE = Low
(A-1 to A6)
00H
01H
02H to FEH
FFH
BYTE = High
(A0 to A6)
00H
01H
02H to 7EH
7FH
t AH
t AS
t WC
t CE
CE
t CS
OE
t OE
t CH
t OEH
t WP
t DAP
t WPH
WE
t DS t DH
41H
I/O
Din
Din
Din
SRD
Din
t WHRL
RDY/Busy
t BS
t BH
BYTE
VHH
RP
WP
22
t BLS
t BLH
t WPS
t WPH
t PS
FFH
HN29WT800 Series, HN29WB800 Series
Page Program Timing Waveform (CE control)
Page program
A7 to A18
Read status
Write read
register array command
Address valid
BYTE = Low
(A-1 to A6)
00H
BYTE = High
(A0 to A6)
00H
CE
02H to FEH
FFH
01H
02H to 7EH
7FH
t CE
t AH
t AS
t WC
01H
t CEPH
t OE
t WH
OE
t WS
t OEH
t CEP
t DAP
WE
t DS t DH
41H
I/O
Din
Din
Din
SRD
Din
FFH
t EHRL
RDY/Busy
t BS
t BH
BYTE
VHH
RP
t BLS
t BLH
t WPS
t WPH
t PS
WP
23
HN29WT800 Series, HN29WB800 Series
Write Timing Waveform for Erase Operations (WE control)
Program, Erase
Address
Read status
Write read
register array command
Address valid
t AH
t AS
t WC
t CE
CE
t CS
t OE
t CH
t OEH
OE
t WP
t DAE
t WPH
WE
t DS t DH
20H
D0H
I/O
SRD
t WHRL
RDY/Busy
tBS
t BH
BYTE
VHH
RP
WP
24
t BLS
t BLH
t PS
t WPS
t WPH
FFH
HN29WT800 Series, HN29WB800 Series
Write Timing Waveform for Erase Operations (CE control)
Program, Erase
Address
Read status
Write read
register array command
Address valid
t AH
t AS
t WC
t CE
CE
t CEPH
t OE
t WH
OE
t OEH
t CEP
t DAE
t WS
WE
t DS t DH
20H
D0H
I/O
SRD
FFH
t EHRL
RDY/Busy
tBS
t BH
BYTE
VHH
RP
t BLS
t BLH
t PS
t WPS
t WPH
WP
25
HN29WT800 Series, HN29WB800 Series
Page Program Flowchart
START
Write 41H
n=0
n=n+1
Write
Address n, Data n
n = FFH ?
or
n = 7FH ?
NO
YES
Status register read
Write B0H ?
SR. 7 = 1 ?
NO
NO
YES
YES
Full status check
if desired
Suspend loop
Write D0H
Page program
completed
YES
26
HN29WT800 Series, HN29WB800 Series
Block Erase Flowchart
START
Write 20H
Write D0H
Block address
Status register read
Write B0H ?
SR. 7 = 1 ?
NO
NO
YES
YES
Full status check
if desired
Suspend loop
Write D0H
Block erase
completed
YES
27
HN29WT800 Series, HN29WB800 Series
Full Status Check Procedure
Status register
read
SR. 4 = 1
and
SR. 5 = 1
?
NO
SR. 5 = 0 ?
Command sequence error
YES
NO
Block erase error
YES
SR. 4 = 0 ?
NO
Program error
(Page, lock bit)
YES
SR. 3 = 0 ?
NO
YES
Successful
(Block erase, program)
28
Program error
(Block)
HN29WT800 Series, HN29WB800 Series
Suspend/Resume Flowchart
START
Write B0H
Suspend
Status register read
SR. 7 = 1 ?
NO
YES
SR. 6 = 1 ?
NO
Program/erase
completed
YES
Write FFH
Read array data
Done
reading?
NO
YES
Write D0H
Resume
Operation
resumed
29
HN29WT800 Series, HN29WB800 Series
Lock Bit Program Flowchart
START
Write 77H
Write D0H
block address
SR. 7 = 1 ?
NO
YES
SR. 4 = 0 ?
NO
YES
Lock bit program
successful
30
Lock bit program
failed
HN29WT800 Series, HN29WB800 Series
Data Protection Operation
Page programming and Block Erasing can be locked by programming a nonvolatile lock bit for each block.
When WP is V IL level, those locked blocks as reflected by the Block-Lock Status bits, are protected from
inadvertent Page programming or Block Erasing.
Programmed block data and Lock-Bit Data can be locked When WP is VIL level.
Lock bit data programmed
Lock bit data programmed
WP = VIL level (Block lock!)
WP = VIL level (Block lock!)
Operation start
Operation start
Write page program command (41H)
Write block erase command (20H)
Write page program data
(WDn, n = 00H to FFH, 00H to 7FH)
Write erase confirm command (D0H)
Block erase error (SR.5 = 1)
Page program error (SR.4 = 1)
Write clear status register command (50H)
Write clear status register command (50H)
Operation end
Operation end
31
HN29WT800 Series, HN29WB800 Series
Programmed block data and Lock-Bit Data can be erased by block erase command When WP is VIH level or
RP is VHH level.
Lock bit data programmed
WP = VIH level or RP = VHH (Block unlock!)
Operation start
Write block erase command (20H)
Write erase confirm command (D0H)
Block data and lock bit data erase successful (SR.5 = 0)
Operation end
32
HN29WT800 Series, HN29WB800 Series
Operation Status and Effective Command
Read/standby state
Read status
register
70H
Read device
identifier
Read lock bit
status
71H
90H
Read array
FFH
Setup state
41H
20H
77H
Page program
setup
Lock bit program
setup
WDi
Inernal state i = 0-255
D0H
Block erase
setup
D0H
other
Program and
verify
Erase and verify
Read status
register
Read status
register
D0H
Erase all unlocked
blocks setup
D0H
other
B0H
A7H
other
D0H
B0H
Suspend state
Read status
register
70H
Read device
identifier
Invalid data
Read lock status
71H
90H
Read array
FFH
33
HN29WT800 Series, HN29WB800 Series
Package Dimensions
HN29WT800T/HN29WB800T Series (TFP-48D)
Unit: mm
12.00
12.40 Max
25
18.40
48
1
24
0.50
34
20.00 ± 0.20
0 – 5°
0.13 ± 0.05
0.10
0.80
0.17 ± 0.05
0.125 ± 0.04
1.20 Max
0.22 ± 0.08
0.08 M
0.20 ± 0.06
0.45 Max
0.50 ± 0.10
Hitachi Code
JEDEC Code
EIAJ Code
Weight
TFP-48D
MO-142DD
SC-669
0.49 g
HN29WT800 Series, HN29WB800 Series
Package Dimensions (cont.)
HN29WT800R/HN29WB800R Series (TFP-48DR)
Unit: mm
12.00
12.40 Max
24
48
25
18.40
1
0.50
20.00 ± 0.20
0 – 5°
0.13 ± 0.05
0.10
0.80
0.17 ± 0.05
0.125 ± 0.04
1.20 Max
0.22 ± 0.08
0.08 M
0.20 ± 0.06
0.45 Max
0.50 ± 0.10
Hitachi Code
JEDEC Code
EIAJ Code
Weight
TFP-48DR
MO-142DD
SC-669
0.49 g
35
HN29WT800 Series, HN29WB800 Series
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other
reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such
use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested
to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
36
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Electronic Components Group
Continental Europe
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München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
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United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
HN29WT800 Series, HN29WB800 Series
Revision Record
Rev.
Date
Contents of Modification
Drawn by
Approved by
0.0
Jun. 14, 1996
Initial issue
K. Izawa
T. Muto
1.0
May. 9, 1997
Deletion of HN29WT/WB800FP Series
Addition of Top Boot Block Address Map
and Bottom Boot Block Address Map
Software Command Definition
Deletion of Sleep command
Deletion of notes8
Deletion of Block Locking (SOP Package)
Change of Status Register Data (SRD)
DC Characteristics
V LKO min: 1.5 V to 1.2 V
V LKO max: 2.5 V to —
AC Characteristics
Test Conditions (HN29WT/WB800-10/12):
1TTL gate + 50 pF to 1TTL gate + 100 pF
Change of parameter name: t RWH to tPS
Deletion of t RP
tPS min: 0/0/0 ns 500/500/500 ns
tDAP max: 120/120/120 ms to 80/80/80 ms
Erase and program performance
Main block write time max: 38.4 s to 20.4 s
Page write time max: 120 ms to 80 ms
Change of Full Status Check Procedure and
Operation Status and Effective Command
Addition of Data Protection Operation
37
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