NTE NTE127 Germanium pnp transistor horizontal output amplifier Datasheet

NTE127
Germanium PNP Transistor
Horizontal Output Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320V
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4, –1A
Power Dissipation (TMF ≤ +55°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature Range, TJ(opr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +85°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +230°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
V(BR)CES IC = 0.025A, VEB = 0
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100mA, IC = 0
Collector Cutoff Current
Collector–Emitter Saturation Voltage
ICBO
VCE(sat)
Min Typ Max Unit
320
–
–
V
2
–
–
V
VCB = 10V, IE = 0
–
–
200
µA
IC = 6A, IB = 400mA
–
–
1.5
V
IC = 3A, IB = 200mA
–
–
1.5
V
DC Current Gain
hFE
VCE = 3V, IC = 6A
15
–
–
Base–Emitter Voltage
VBE
IC = 6A, IB = 400mA
–
0.8
–
V
Turn–Off Time
ts + tf
–
–
1.2
µs
Note 1. This device is for replacement only and NOT intended for new design. Therefore, these
specifications are for reference only and strictly for determining the suitability of this device
as a replacement in a working circuit.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
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