High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 70 A I C90 TC = 90°C 35 A ICM TC = 25°C, 1 ms 140 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 5 W Clamped inductive load ICM = 90 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 5 W, non repetitive 10 ms PC TC = 25°C IGBT Diode 300 190 W W -55 ... +150 TJ °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 10 6 g g TL 1.6 mm (0.063 in) from case for 10 s Weight TO-264 PLUS247 Symbol Test Conditions BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 250 mA, VCE = VGE I CES VCE = 0.8 VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 V 3 6 V 1 3 mA mA ±100 nA 3.6 V TJ = 125°C = IC90, VGE = 15 V VCES = 1200 V IC25 = 70 A VCE(SAT) = 3.6 V TO-264 AA (IXSK) G C E PLUS TO-247 (IXSX) TM G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features Hole-less TO-247 package for clip mounting High frequency IGBT and anti-parallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) Reduces assembly time and cost High power density Device must be heatsunk for high temperature measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 98733 (7/00) IXSX 35N120BD1 IXSX 35N120BD1 Symbol Test Conditions gfs IC = IC90; VCE = 10 V, Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 23 S 3600 pF 315 pF Cres 75 pF Qg 120 nC 33 nC 49 nC Inductive load, TJ = 25°C 36 ns I C = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 5.0 W Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 27 ns TO-247 HOLE-LESS Outline Pulse test, t £ 300 ms, duty cycle £ 2 % Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz I C = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C I C = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 5.0 W Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 160 300 ns 180 300 ns 5 9 mJ 38 ns 29 ns 6 mJ 240 ns 340 ns 9 mJ 0.42 K/W RthJC RthCK 0.15 Reverse Diode (FRED) TO-264 AA Outline K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF I F = 130A, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C IRM t rr IF = 130A, VGE = 0 V, -diF/dt = 100 A/ms TJ =100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V RthJC 2.75 1.85 7 14.3 40 V V A ns 0.65 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025