CSD18534KCS www.ti.com SLPS383 – SEPTEMBER 2012 60-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18534KCS FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package TA = 25°C UNIT Drain to Source Voltage 60 V Qg Gate Charge Total (10V) 19 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage 3.1 nC VGS = 4.5V 10.2 mΩ VGS = 10V 7.6 mΩ 1.9 V ORDERING INFORMATION Device Package Media Qty Ship CSD18534KCS TO-220 Plastic Package Tube 50 Tube APPLICATIONS • • • TYPICAL VALUE VDS DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°C DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. VALUE UNIT VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V Continuous Drain Current (Package limited), TC = 25°C 100 Continuous Drain Current (Silicon limited), TC = 25°C 71 Continuous Drain Current (Silicon limited), TC = 100°C 45 IDM Pulsed Drain Current (1) 108 A PD Power Dissipation 98 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 38A, L = 0.1mH, RG = 25Ω 72 mJ ID A (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 10 TC = 25°C Id = 40A TC = 125ºC Id = 40A 28 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 32 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 40A VDS = 30V 8 6 4 2 0 0 2 4 6 8 10 12 14 Qg - Gate Charge (nC) 16 18 20 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated CSD18534KCS SLPS383 – SEPTEMBER 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 48V IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Drain to Source On Resistance gfs Transconductance 60 1.5 V 1 μA 100 nA 1.9 2.3 V 10.2 13.3 mΩ VGS = 10V, ID = 40A 7.6 9.5 mΩ VDS = 30V, ID = 40A 100 VGS = 4.5V, ID = 40A S Dynamic Characteristics Ciss Input Capacitance 1500 1880 pF Coss Output Capacitance Crss Reverse Transfer Capacitance 164 205 pF 5.0 6.5 RG pF Series Gate Resistance 1.5 3.0 Ω Qg Gate Charge Total (4.5V) 9.3 12 nC Qg Gate Charge Total (10V) 19 24 nC Qgd Gate Charge Gate to Drain Qgs Qg(th) Qoss Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 30V, f = 1MHz VDS = 30V, ID = 40A 3.1 nC Gate Charge Gate to Source 4.8 nC Gate Charge at Vth 3.3 nC 18 nC 4.2 ns VDS = 30V, VGS = 0V VDS = 30V, VGS = 10V, IDS = 40A, RG = 0Ω 4.8 ns 10.4 ns 2.4 ns Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = 40A, VGS = 0V 0.8 VDS= 30V, IF = 40A, di/dt = 300A/μs 68 1 nC V 49 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) MAX UNIT RθJC Thermal Resistance Junction to Case PARAMETER 1.3 °C/W RθJA Thermal Resistance Junction to Ambient 62 °C/W 2 Submit Documentation Feedback MIN TYP Copyright © 2012, Texas Instruments Incorporated Product Folder Links: CSD18534KCS CSD18534KCS www.ti.com SLPS383 – SEPTEMBER 2012 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 60 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) 100 80 60 40 VGS =10V VGS =6.5V VGS =4.5V 20 0 0 0.5 1 VDS - Drain-to-Source Voltage (V) 1.5 VDS = 5V 40 20 TC = 125°C TC = 25°C TC = −55°C 0 0 G001 Figure 2. Saturation Characteristics 1 2 3 VGS - Gate-to-Source Voltage (V) Product Folder Links: CSD18534KCS G001 Figure 3. Transfer Characteristics Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated 4 3 CSD18534KCS SLPS383 – SEPTEMBER 2012 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 10000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd ID = 40A VDS = 30V 8 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 6 4 1000 100 2 0 0 2 4 6 8 10 12 14 Qg - Gate Charge (nC) 16 18 10 20 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) G001 Figure 4. Gate Charge TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING ID = 250uA 2.4 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 32 2.2 2 1.8 1.6 1.4 1.2 1 0.8 −75 −25 25 75 125 TC - Case Temperature (ºC) TC = 25°C Id = 40A TC = 125ºC Id = 40A 28 24 20 16 12 8 4 0 175 0 2 G001 Figure 6. Threshold Voltage vs. Temperature TEXT ADDED FOR SPACING 18 20 G001 TEXT ADDED FOR SPACING VGS = 4.5V VGS = 10V ID =40A 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 100 ISD − Source-to-Drain Current (A) 2.2 4 Figure 7. On-State Resistance vs. Gate-to-Source Voltage 2.4 Normalized On-State Resistance G001 Figure 5. Capacitance 2.6 −25 25 75 125 TC - Case Temperature (ºC) 175 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) G001 Figure 8. Normalized On-State Resistance vs. Temperature 4 60 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: CSD18534KCS CSD18534KCS www.ti.com SLPS383 – SEPTEMBER 2012 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100 1ms 10ms 1000 100ms 1s DC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 100 10 1 0.1 Single Pulse Typical RthetaJA =52ºC/W 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 TC = 25ºC TC = 125ºC 10 0.01 0.1 TAV - Time in Avalanche (mS) G001 Figure 10. Maximum Safe Operating Area 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING IDS - Drain- to- Source Current (A) 120 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 TC - Case Temperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: CSD18534KCS 5 CSD18534KCS SLPS383 – SEPTEMBER 2012 www.ti.com MECHANICAL DATA KCS Package Dimensions Notes: 1. All linear dimensions are in inches 2. This drawing is subject to change without notice 3. Lead Dimensions are not controlled within "C" area 4. All lead dimensions apply before solder dip 5. The center lead is in electrical contact with the mounting tab 6. The chamfer at "F" is optional 7. Thermal pad contour at "G" optional with these dimensions 8. "H" Falls within JEDEC TO-220 variation AB, except minimum lead thickness, minimum exposed pad length, and maximum body length. Table 1. Pin Configuration 6 Position Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: CSD18534KCS PACKAGE OPTION ADDENDUM www.ti.com 20-Dec-2012 PACKAGING INFORMATION Orderable Device Status (1) CSD18534KCS ACTIVE Package Type Package Pins Package Qty Drawing TO-220 KCS 3 50 Eco Plan Lead/Ball Finish (2) Pb-Free (RoHS Exempt) CU SN MSL Peak Temp Samples (3) (Requires Login) N / A for Pkg Type (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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