ATP106 Ordering number : ENA1597 SANYO Semiconductors DATA SHEET ATP106 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP PW≤10μs, duty cycle≤1% V ±20 V --30 A --90 A 40 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 30 mJ --15 A Avalanche Current *2 Tc=25°C Unit --40 Note : *1 VDD=--10V, L=200μH, IAV=--15A *2 L≤200μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--40V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V Marking : ATP106 Ratings min typ max --40 Unit V --1 μA ±10 μA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N0409PA TK IM TC-00002145 No. A1597-1/4 ATP106 Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max RDS(on)1 VDS=--10V, ID=--1mA VDS=--10V, ID=--15A ID=--15A, VGS=--10V RDS(on)2 ID=--8A, VGS=--4.5V Input Capacitance Ciss VDS=--20V, f=1MHz 1380 pF Output Capacitance Coss VDS=--20V, f=1MHz 210 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 150 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 12 ns See specified Test Circuit. 120 ns td(off) tf See specified Test Circuit. 110 ns See specified Test Circuit. 90 ns 29 nC 6.4 nC Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time --1.5 --2.6 28 Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=--20V, VGS=--10V, ID=--30A VDS=--20V, VGS=--10V, ID=--30A Gate-to-Drain “Miller” Charge Qgd VDS=--20V, VGS=--10V, ID=--30A Diode Forward Voltage VSD IS=--30A, VGS=0V V S 19 25 mΩ 29 41 mΩ 5.9 --0.97 nC --1.5 V Package Dimensions unit : mm (typ) 7057-001 1.5 4.6 0.5 7.3 0.55 0.7 0.5 3 0.8 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 2.3 0.1 2.3 1.7 2 1 0.4 0.4 9.5 4 4.6 2.6 6.05 6.5 SANYO : ATPAK Switching Time Test Circuit 0V --10V VDD= --20V VIN ID= --15A RL=1.33Ω VIN D PW=10μs D.C.≤1% VOUT G P.G ATP106 50Ω S No. A1597-2/4 ATP106 VGS= --3.0V --1.0 --1.2 --1.4 --1.6 --1.8 50 ID= --8A --15A 40 35 30 25 20 15 10 Gate-to-Source Voltage, VGS -- V C 5° 10 = Tc 7 --2 °C 75 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 7 25° C --2.5 --3.0 --3.5 C Single pulse 50 45 40 8A 35 = -, ID .5V 4 = -V GS 30 5A = --1 0V, I D 1 = VGS 25 20 15 10 0 --25 25 50 75 100 125 150 IT15125 IS -- VSD VGS=0V Single pulse --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V IT15126 SW Time -- ID --5.0 IT15123 55 --100 7 5 3 2 --10 7 5 3 2 Ciss, Coss, Crss -- VDS 5 VDD= --20V VGS= --10V 75° 25° C --4.0 --4.5 Case Temperature, Tc -- °C Source Current, IS -- A °C 25 2 --2.0 RDS(on) -- Tc 5 --50 VDS= --10V Single pulse 3 --1.5 IT15124 | yfs | -- ID 5 --1.0 Gate-to-Source Voltage, VGS -- V --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 7 --0.5 60 Tc=25°C Single pulse 45 0 IT15122 RDS(on) -- VGS 55 0 --2.0 C --0.8 --25° --0.6 25°C --0.4 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --15 5°C --0.2 5 0 Forward Transfer Admittance, | yfs | -- S --20 Tc= 7 0 60 --1.4 IT15127 f=1MHz 3 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --25 --5 Drain-to-Source Voltage, VDS -- V 5 --30 --10 --5 7 --35 Tc= --2 75° 5°C C --8. 0 --3.5V --10 1000 Tc= --6 --40 --15 0 VDS= --10V Single pulse --45 Drain Current, ID -- A --20 V --4.0 V 0V --10 .0V --25 .5V --4 ID -- VGS --50 --16 . Drain Current, ID -- A --30 .0V Tc=25°C Single pulse --25 °C ID -- VDS --35 td(off) 100 tf 7 5 tr 3 2 Ciss 1000 7 5 3 Coss Crss 2 td(on) 100 10 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 IT15128 7 0 --5 --10 --15 --20 --25 --30 Drain-to-Source Voltage, VDS -- V --35 --40 IT15129 No. A1597-3/4 ATP106 VGS -- Qg --10 --2 --1.0 7 5 --1 3 2 --3 0 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Tc 30 30 25 20 15 10 5 20 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15132 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT15131 EAS -- Ta 120 35 0 2 IT15130 40 0 Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 Operation in this area is limited by RDS(on). 3 2 on ati er --4 --10 7 5 op --5 10 0m s s m --6 ID= --30A 3 2 s 1m --7 PW≤10μs 10 μs 10 0μ s 10 Drain Current, ID -- A --8 0 IDP= --90A --100 7 5 DC Gate-to-Source Voltage, VGS -- V --9 ASO 2 VDS= --20V ID= --30A 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT15133 Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice. PS No. A1597-4/4