CEM26138 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 33mΩ @VGS = 4.5V. 20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter TA = 25 C unless otherwise noted Symbol Channel 1 Channel 2 Drain-Source Voltage VDS 30 20 Units V Gate-Source Voltage VGS ±20 ±12 V ID 7.6 6 A IDM 30 24 A Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 2. 2012.Aug http://www.cetsemi.com CEM26138 N-Channel(Q1) Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 3 V VGS = 10V, ID = 6.3A 1 17 22 mΩ VGS = 4.5V, ID = 5.0A 27 33 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 590 pF 125 pF 95 pF 10 ns 4 ns 25 ns Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω Turn-Off Fall Time tf 4 ns Total Gate Charge Qg 13 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 3.5 nC VDS = 15V, ID = 6A, VGS = 5V Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.6A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 1.6 A 1.2 V CEM26138 N-Channel(Q2) Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 20V, VGS = 0V 1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA 1.5 V VGS = 4.5V, ID = 6A 0.5 21 27 mΩ VGS = 2.5V, ID = 5.2A 32 40 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 8V, VGS = 0V, f = 1.0 MHz 720 pF 130 pF 95 pF 10 ns 7 ns 34 ns Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω Turn-Off Fall Time tf 6 ns Total Gate Charge Qg 6.8 nC Gate-Source Charge Qgs 0.5 nC Gate-Drain Charge Qgd 1.8 nC VDS = 10V, ID = 6A, VGS = 4.5V Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 1.7 A 1.2 V CEM26138 CHANNEL 1 15 VGS=10,8,6,5V VGS=4V 20 ID, Drain Current (A) ID, Drain Current (A) 25 15 10 VGS=3V 5 0 0 1 2 3 0 -55 C 6 4 2 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 450 300 Coss 150 Crss 0 3 6 9 12 15 2.2 1.9 ID=6.3A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 3 VDS, Drain-to-Source Voltage (V) 600 1.2 6 0 750 1.3 9 4 900 0 12 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM26138 CHANNEL 2 15 VGS=4.5,3.5,2.5V VGS=2.0V 8 ID, Drain Current (A) ID, Drain Current (A) 10 6 4 2 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 1.0 1.5 2.0 2.5 3.0 Figure 7. Output Characteristics Figure 8. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 Coss 150 Crss 0 2 4 6 8 10 2.2 1.9 ID=6A VGS=4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0.5 -55 C VGS, Gate-to-Source Voltage (V) Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 25 C 3 0 0.0 3.0 600 1.2 6 VDS, Drain-to-Source Voltage (V) 750 1.3 9 TJ=125 C 900 0 12 -25 0 25 50 75 100 125 VGS=0V 10 1 10 0 10 -1 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 CEM26138 10 V =15V DS ID=6A 10 6 4 2 0 0 4 8 12 16 10 1 10 0 10 -1 10 -2 10 -2 10 -1 10 0 10 1 Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) TA=25 C TJ=150 C Single Pulse VDS, Drain-Source Voltage (V) 5 V =10V DS ID=4.5A 3 2 1 0 1ms 10ms 100ms 1s DC Qg, Total Gate Charge (nC) CHANNEL 2 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CHANNEL 1 2 4 6 8 10 2 10 1 10 0 10 -1 10 -2 RDS(ON)Limit 2 10 2 1ms 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 10 CEM26138 VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms Figure 17. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 1 10 2