HFA30PA60CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level Pb-free Available RoHS* COMPLIANT BENEFITS TO-247AC • • • • • 1 3 Anode Anode 2 1 2 Common cathode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HFA30PA60C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A per leg continuous current, the HFA30PA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA30PA60C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR 600 V VF at 15 A at 25 °C 1.7 V IF(AV) 2 x 15 A trr (typical) 19 ns TJ (maximum) 150 °C Qrr (typical) 80 nC dI(rec)M/dt (typical) 160 A/µs IRRM (typical) 4.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF TC = 100 °C VALUES UNITS 600 V 15 30 Single pulse forward current IFSM 150 Maximum repetitive forward current IFRM 60 Maximum power dissipation PD Operating junction and storage temperature range TC = 25 °C 74 TC = 100 °C 29 TJ, TStg - 55 to + 150 A W °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94068 Revision: 25-Jul-08 For technical questions, contact: [email protected] www.vishay.com 1 HFA30PA60CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 µA Maximum forward voltage VFM IF = 30 A IF = 15 A See fig. 1 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 UNITS V IF = 15 A, TJ = 125 °C - 1.2 1.6 VR = VR rated - 1.0 10 - 400 1000 - 25 50 pF - 12 - nH Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 µA DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 19 - trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V trr1 TJ = 25 °C - 42 60 trr2 TJ = 125 °C - 70 120 - 4.0 6.0 - 6.5 10 - 80 180 - 220 600 IRRM1 TJ = 25 °C IRRM2 TJ = 125 °C IF = 15 A dIF/dt = 200 A/µs VR = 200 V UNITS ns A Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 250 - dI(rec)M/dt2 TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 - - 0.85 nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063” from case (1.6 mm) for 10 s RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device www.vishay.com 2 Case style TO-247AC (JEDEC) For technical questions, contact: [email protected] HFA30PA60C Document Number: 94068 Revision: 25-Jul-08 HFA30PA60CPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 15 A 10000 TJ = 150°C 1000 100 TJ = 125°C 10 100 1 0.1 TJ = 25°C 0.01 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) TJ = 150°C TJ = 125°C 10 TJ = 25°C 100 A TJ = 25°C A 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 Forward Voltage Drop - V FM(V) 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94068 Revision: 25-Jul-08 For technical questions, contact: [email protected] www.vishay.com 3 HFA30PA60CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A 800 100 VR = 200V TJ = 125°C TJ = 25°C I F = 30A I F = 15A I F = 5.0A 80 600 I F = 30A I F = 15A 60 IF = 5.0A 400 40 200 20 VR = 200V TJ = 125°C TJ = 25°C 0 100 dI f /dt - (A/µs) 0 100 1000 dI f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 10000 25 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 20 I F = 30A I F = 15A I F = 5.0A I F = 30A 15 I F = 15A 1000 I F = 5.0A I 10 5 0 100 dI f /dt - (A/µs) 1000 Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) www.vishay.com 4 100 100 dI f /dt - (A/µs) 1000 Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) For technical questions, contact: [email protected] Document Number: 94068 Revision: 25-Jul-08 HFA30PA60CPbF HEXFRED® Vishay High Power Products Ultrafast Soft Recovery Diode, 2 x 15 A VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94068 Revision: 25-Jul-08 For technical questions, contact: [email protected] www.vishay.com 5 HFA30PA60CPbF Vishay High Power Products HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A ORDERING INFORMATION TABLE Device code HF A 30 PA 60 C PbF 1 2 3 4 5 6 7 1 - HEXFRED® family 2 - Process designator: A = Subs. electron irradiated 3 - Current rating (30 = 30 A) 4 - Package outline (PA = TO-247, 3 pins) 5 - Voltage rating (60 = 600 V) 6 - Configuration (C = Center tap common cathode) 7 - B = Subs. platinum None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95223 Part marking information http://www.vishay.com/doc?95226 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94068 Revision: 25-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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