PIN Silicon Photodiode OP950 Series OP950 OP954 OP955 Features: • • • • • • Epoxy package Linear response vs. irradiance Fast switching me Choice of wide or extra wide receiving angle Side-looker package Small package style ideal for space-limited applica ons Description: Each OP950, OP954 and OP955 device consists of a PIN silicon photodiode molded in an epoxy packge that allows spectral response from visible to infrared light wavelengths. The side-looking package is designed for easy PCBoard moun ng and space-limited applica ons. The OP950 has a 95° wide receiving angle that provides rela vely even recep on over a large area and is mechanically and spectrally matched to OPTEK’s GaAs and GaAiAs series of infrared emi ng diodes. The OP954 has a 128° very wide receiving angle that provides rela vely even recep on over a large area. The OP955 has a 95° wide receiving angle with a recessed lens, which allows an acceptance half-angle of 45° when measured from the op cal axis to the half power point. Both OP954 and OP955 components are 100% produc on tested, using infrared light for close correla on with OPTEK’s GaAs and GaAIAs emi ers. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Applications: • • • • • • Non-contact reflec ve object sensor Assembly line automa on Machine automa on Machine safety End of travel sensor Door sensor Part Number OP950 OP954 OP955 Ordering InformaƟon Sensor Viewing Angle 95° Photodiode 128° 95° Lead Length 50” RoHS General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue A 08/2016 Page 1 PIN Silicon Photodiode OP950 Series OP950 Sidelooker Lens OP950 1 DIMENSIONS ARE IN: [MILLIMETERS] INCHES Pin # Diode 1 Anode 2 Cathode 2 OP954 Sidelooker Lens OP954 1 DIMENSIONS ARE IN: [MILLIMETERS] INCHES 2 Pin # Diode 1 Cathode 2 Anode OP954 - CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plas cs. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue A 08/2016 Page 2 PIN Silicon Photodiode OP950 Series OP955 Sidelooker Recessed Lens OP955 1 DIMENSIONS ARE IN: [MILLIMETERS] INCHES 2 Pin # Diode 1 Cathode 2 Anode OP955 - CONTAINS POLYSULFONE To avoid stress cracking, we suggest using ND Industries’ Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in OPTEK'S molded plas cs. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue A 08/2016 Page 3 PIN Silicon Photodiode OP950 Series Electrical Specifications Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Reverse Breakdown Voltage 60 V Storage & Opera ng Temperature Range -40° C to +100° C 260° C(1) Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron] Reverse Breakdown Voltage 60 V 100 mW(2) Power Dissipa on Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL MIN TYP MAX UNITS IL Reverse Light Current OP950, OP955 OP954 8 3.5 - 18 8 µA VR = 5 V, EE = 1 mW/cm2 (3) ID Reverse Dark Current - 1 60 nA VR = 30 V, EE = 0(4) 60 - - V IR = 100 μA V(BR) PARAMETER Reverse Breakdown Voltage TEST CONDITIONS VF Forward Voltage - - 1.2 V IF = 1 mA CT Total Capacitance - 4 - pF VR = 20 V, EE = 0, f = 1.0 MHz tr Rise Time - 5 - tf Fall Time - 5 - ns VR = 20 V, λ = 850 nm, RL = 50 Ω Notes: (1) RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.67 mW/° C above 25° C. (3) The light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the en re lens surface of the photodiode being tested. (4) Calculate the typical dark current in nA using the formula ID = 10(0.042TA-1.5) where TA is ambient temperature in °C. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue A 08/2016 Page 4 PIN Silicon Photodiode OP950 Series Performance OP950 Series General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue A 08/2016 Page 5