BAV19WS FM120-M+ BAV20WSTHRU BAV21WS FM1200-M+ WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline FeaturesDIODE FAST SWITCHING • Batch process design, excellent power dissipation offers FEATURES z z z z z better reverse leakage current and thermal resistance. Fast• Low Switching Speedmounted application in order to profile surface optimize board space. Ideally Suited for Automatic Surface Mount Package • Low power loss, high efficiency. For •General Purpose Switching Applications High current capability, low forward voltage drop. surge capability. • Highpackage Pb-Free is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” high-speed switching. • Ultra Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • Moisture Sensitivity Level 1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOD-323 SOD-123H Insertion 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Polarity: Color band denotes cathode end Mechanical data 0.040(1.0) MARKING: BAV19WS: A8 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy BAV20WS: T2 SOD-123H : Molded plastic, • Case 0.031(0.8) Typ. 0.031(0.8) Typ. , BAV21WS: T3 • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum RatingsMethod and Electrical Characteristics, Single Diode @Ta=25℃ 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Parameter Symbol BAV19WS BAV20WS BAV21WS Unit • Mounting Position : Any 120 200 250 V VRM Non-Repetitive Reverse Voltage • WeightPeak : Approximated 0.011 gram Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. DC Blocking Voltage R Single phase half wave, 60Hz, resistive of inductive V load. For capacitive load, derate current by 20% VR(RMS) RMS Reverse Voltage RATINGS 150 250 V 71 106 141 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Forward Continuous Current IFM Marking Code Average Output Current MaximumRectified Recurrent Peak Reverse Voltage Maximum RMS Voltage Peak Forward Surge Current @t=1.0ms Maximum DC Blocking Voltage 100 IVORRM 12 20 13 30 14 40 VRMS 14 21 VDC 20 30 IFSM @ t=1.0s IO Maximum Average Forward Rectified Current Repetitive Peak Forward Current Peak Forward Surge Current 8.3 ms single half sine-wave Power Dissipation superimposed on rated load (JEDEC method) Thermal Resistance Junction Typical Thermal Resistance (Note 2)to Parameter Maximum Average Reverse Current at @T A=25℃ Forward voltage NOTES: 42 56 70 105 140 V 40 0.550 60 80 100 A 150 200 V 1.0 RΘJA 500 40 120 ℃/W Symbol IR -55 to +125 -55~+150 Min 0.50 Typ Max 0.70 VF1 1.0 VF2 1.25 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse BAV19WS 2- Thermalcurrent Resistance From Junction to Ambient BAV20WS 2.535 -55 to +150 - 65 to +175 Unit 0.5 10 V 0.1 IR BAV21WS 0.1 μA 0.1 ℃ ℃ 0.9 0.85 Conditions 0.92 V m IF=0.1A IF=0.2A VR=150V VR=200V CT 5 pF Reverse recovery time trr 50 ns 2012-1 A VR=100V Capacitance between terminals 2012-06 A mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U @T A=125℃ Rated DC Blocking Voltage V 28 mW VF Maximum Forward Voltage at 1.0A DC 120 200 30 TSTG Electrical Ratings @Ta=25℃ CHARACTERISTICS 10 115 100 mA 150 250 TSTG Storage Temperature Range 18 80 IFSM Pd TJ Operating Temperature Range 16 60 625 CJ Storage Temperature mA 15 200 50 IFRM RθJA Typical Junction Capacitance (Note 1) Ambient 400 VR=0V,f=1MHz IF=IR=30mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BAV19WS FM120-M+ BAV20WSTHRU BAV21WS FM1200-M+ WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. Forward Characteristics planar chip, metal silicon junction. •400Silicon epitaxial • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Typical Characteristics BAV19WS 1000 MIL-STD-19500 /228 300 Halogen free product for packing code suffix "H" 100 Ta=100℃ (nA) Method 2026 • Polarity : Indicated by cathode band • 3Mounting Position : Any • Weight : Approximated 0.011 gram REVERSE CURRENT IR Ta =2 5℃ • Epoxy : UL94-V0 rated flame retardant 30 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 1 0.2 0.040(1.0) 0.024(0.6) 30 Ta=25℃ 10 0.031(0.8) Typ. Dimensions in inches and (millimeters) 1 0.3 0.1 MAXIMUM AND ELECTRICAL CHARACTERISTICS 0.4 0.6 RATINGS 0.8 1.0 1.2 1.4 0 20 RATINGS 12 20 13 30 Maximum RMS Voltage VRMSTa=25℃ 14 21 Maximum DC Blocking Voltage VDC 20 30 f=1MHz 1.2 Peak Forward Surge Current 8.3 ms single half sine-wave PD IFSM 1.0 superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 0.8 Storage Temperature Range 80 CHARACTERISTICS VR 100 120 (V) 250 16 18 10 Power Derating Curve 60 80 100 28 35 42 56 40 50 60 80 200 115 150 120 200 Vo 70 105 140 Vo 100 150 200 Vo 1.0 Am 30 Am ℃ 40 120 150 P -55 to +150 100 ℃ - 65 to +175 ℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH50 VF Maximum0.4Average Reverse Current at @T A=25℃ 10 @T A=125℃ REVERSE VOLTAGE 300 15 50 -55 to +125 TSTG Maximum Forward Voltage at 1.0A DC 5 60 14 40 (mW) IO Maximum Average Forward Rectified Current POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Capacitance Characteristics Maximum1.4Recurrent Peak Reverse Voltage VRRM 0 40 REVERSE VOLTAGE SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Rated DC Blocking Voltage 0.031(0.8) Typ. 3 VOLTAGE (V) Ratings at 25℃ ambientFORWARD temperature unlessVotherwise specified. F Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.6 0.071(1.8) 0.056(1.4) Characteristics 100 Mechanical data Ta =1 00 ℃ FORWARD CURRENT IF (mA) • RoHS product for packing code suffix "G" 10 Reverse VR 15 (V) IR 0.50 20 0 0.70 0.9 0.85 0.92 0.5 0 25 50 10 75 AMBIENT TEMPERATURE 100 Ta 125 150 Vo mA (℃ ) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAV19WS BAV20WS BAV21WS SOD-323 Plastic-Encapsulate Diodes Outline Drawing SOD-323 .075(1.90) .059(1.50) .045(1.15) .010(0.25) .016(0.40) .091(2.30) .057(1.45) .106(2.70) .043(1.10) .031(0.80) .004(0.10)MAX. .008(0.20) .004(0.10) .016(0.40) .010(0.25) .010(0.25)MIN. Dimensions in inches and (millimeters) Rev.C 2012-1 WILLAS ELECTRONIC CORP.