Electronics MB10M Rectifier reverse voltage 50 to 1000v Datasheet

星合电子
XINGHE ELECTRONICS
MB05M thru MB10M
0.8 A Single-Phase Glass Passivated Bridge Rectifiers
Rectifier Reverse Voltage 50 to 1000V
MBM
Features
4.6± 0.2
1.3± 0.15
3.6± 0.2
This series is UL listed under the Recognized
Component Index, file number E142814
Ideal for surface mount application
The plastic material used carries Underwriters
Laboratory flammability recognition 94V-0
Surge overload ratings to 30 amperes
High temperature soldering guaranteed 260 C/5
seconds at 5 lbs (2.3kg) tension
3.8± 0.2
Case: Molded plastic
Terminals: Plated leads solderable per MIL-STD-202,
Method 208
Polarity: Marked on body
Mounting Position: Any
Weight: 0.125 grams (approx)
4.8± 0.2
2.5± 0.2
Mechanical Data
5.5± 0.2
0.6± 0.1
0.2± 0.05
6.2± 0.2
2.5± 0.25
Dimensions in millimeters(1mm =0.0394")
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
Parameter
Symbol MB05M MB1M MB2M MB4M MB6M MB8M MB10M unit
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS bridge input voltage
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
Maximum DC blocking voltage
Maximum average forward rectified
output current at TA=40 C
IF(AV)
0.8
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
IFSM
30
A
I t
8.73
A sec
ReJA
110
C /W
Cj
19.0
pF
Rating for fusing ( t<8.3ms)
Typical thermal resistance per element (1)
Typical junction capacitance per element (2)
Operating junction and storage temperature
range
2
TJ,
TSTG
-55 to + 150
2
C
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
Parameter
Symbol MB05M MB1M MB2M MB4M MB6M MB8M MB10M Unit
Maximum instantaneous forward voltage drop
per leg at 1.0A
VF
1.1
V
Maximum DC reverse current at rated TA =25 C
DC blocking voltage per element
TA =125 C
IR
10
500
A
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.
(3)R-load on aluminum substrate TA=25 C.
1
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
星合电子
MB05M thru MB10M
XINGHE ELECTRONICS
Rating and Characteristic Curves
( TA=25 C Unless otherwise noted )
Peak Forward Surge Current,
Amperes
Fig. 1 Derating Curve for
Output Rectified Current
1.0
Average Forward Output
Current, Amperes
60Hz Resistive of
Inductive Load
0.8
0.6
0.4
Fig. 2 Maximum Non-repetitive Peak
Forward Surge Current
30
8.3ms
Single half-sine-Wave
[JEDEC Method]
20
10
0
10
1
100
Number of Cycles at 60Hz
0.2
Fig. 4 Typical Revers
Characteristics
100
0
40
60
80
100
120
140
Instantaneous Reverse
Current ,Amperes
20
Ambient Temperature, C
1.0
Tj=25 C
0.1
.01
10
0
Tj=25 C
Pulse Width=300us
2% duty cycle
20
40
60
80
100
120
140
Percent of Rated Peak Reverse
Voltage, %
1.0
Fig. 5 Typical Junction Capacitance
100
Tj=25 C
f=1.0MHz
Vsin=50mV p.p.
0.1
.01
0.4
0.6
0.8
1.0
1.2
Capacitance, pF
Instantaneous Forward Current,
Amperes
Fig. 3 Typical Instantaneous
Forward Characteristics
Tj=125 C
10
1.4
Instantaneous Forward
Voltage, Volts
10
1
1.5 2
10
100
Reverse Voltage, Volts
2
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
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