APT60M80L2VFR
600V 65A
POWER MOS V® FREDFET
0.080Ω
L2VFR
TO-264
Max
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• TO-264 MAX Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
D
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT60M80L2VFR
UNIT
600
Volts
Drain-Source Voltage
65
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
PD
TJ,TSTG
1
260
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
65
(Repetitive and Non-Repetitive)
1
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 32.5A)
TYP
MAX
UNIT
Volts
0.080
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
050-7266 Rev A 6-2004
Symbol
DYNAMIC CHARACTERISTICS
Symbol
C iss
APT60M80L2VFR
Characteristic
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
tf
ID = 65A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
ns
1880
VDD = 400V, VGS = 15V
2830
ID = 65A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
31
RG = 0.6Ω
Eon
UNIT
pF
700
590
50
310
14
24
70
ID = 65A @ 25°C
Turn-off Delay Time
MAX
13300
1610
VDD = 300V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
3100
VDD = 400V, VGS = 15V
ID = 65A, RG = 5Ω
3345
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
280
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -65A)
1.3
Volts
15
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
65
5
t rr
Reverse Recovery Time
(IS = -65A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -65A, di/dt = 100A/µs)
Tj = 25°C
2.3
Tj = 125°C
7
IRRM
Peak Recovery Current
(IS = -65A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
32
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.15
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.12
0.7
0.10
0.5
Note:
0.06
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7266 Rev A 6-2004
0.16
0.08
0.3
0.04
0
t1
t2
0.02
SINGLE PULSE
0.1
10-5
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-4
°C/W
4 Starting Tj = +25°C, L = 1.51mH, RG = 25Ω, Peak IL = 65A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID65A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.14
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT60M80L2VFR
180
6.5V
RC MODEL
Junction
temp. (°C)
0.0456
0.0272F
Power
(watts)
0.104
0.493F
ID, DRAIN CURRENT (AMPERES)
160
Case temperature. (°C)
140
120
100
80
60
TJ = +125°C
20
0
TJ = +25°C
0
TJ = -55°C
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
60
50
40
30
20
10
0
25
100
5.5V
80
5V
60
40
4.5V
20
4V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
V
I
D
= 32.5A
GS
NORMALIZED TO
= 10V @ I = 32.5A
GS
D
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0.8
0
20
40
60
80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
-50
120
1.15
70
V
6V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7266 Rev A 6-2004
ID, DRAIN CURRENT (AMPERES)
160
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
140
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200
180
15 &10V
OPERATION HERE
LIMITED BY RDS (ON)
100
10
1mS
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
Ciss
100µS
1
I
= 65A
D
12
VDS=120V
8
VDS=300V
VDS=480V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10,000
5000
Coss
1000
Crss
500
100
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT60M80L2VFR
50,000
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
260
600
200
100
TJ =+150°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
200
V
DD
R
G
400
V
DD
R
L = 100µH
tf
T = 125°C
J
300
J
150
= 400V
= 5Ω
G
= 400V
= 5Ω
T = 125°C
td(off)
tr and tf (ns)
td(on) and td(off) (ns)
500
L = 100µH
200
100
50
100
tr
td(on)
0
30
0
30
70
90
110
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
8,000
50
V
DD
R
G
70
90
110
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
25,000
I
L = 100µH
Eoff
E ON includes
diode reverse recovery.
4,000
Eon
2,000
0
30
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
J
6,000
50
V
= 400V
= 5Ω
T = 125°C
050-7266 Rev A 6-2004
TJ =+25°C
DD
D
= 400V
= 65A
T = 125°C
20,000
J
L = 100µH
E ON includes
diode reverse recovery.
Eoff
15,000
10,000
Eon
5,000
0
40
50
60
70 80
90 100 110
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT60M80L2VFR
Gate Voltage
10%
90%
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
Drain Current
90%
90%
tr
Drain Voltage
tf
5%
10%
5%
Drain Voltage
Switching Energy
Switching Energy
10%
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2VFR) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7266 Rev A 6-2004
Drain
5.79 (.228)
6.20 (.244)