NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS (Units in mm) • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 A • HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz 0.6±0.15 5.7 MAX. Gate 1.5±0.2 Source 0X001 • HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 4.2 MAX. 2 • HIGH OUTPUT POWER: +32 dBm TYP 0.4±0.15 0.8 MAX. 5.7 MAX. 0.2±0.1 0.9±0.2 DESCRIPTION 3.6±0.2 APPLICATIONS NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. • DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets • 0.7-2.5 GHz FIXED WIRELESS ACCESS • W-LAN • SHORT RANGE WIRELESS • RETAIL BUSINESS RADIO • SPECIAL MOBILE RADIO ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE5520279A PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL ηADD Electrical DC Characteristics ID CHARACTERISTICS Output Power 79A UNITS MIN TYP dBm 30.5 32.0 Linear Gain dB Power Added Efficiency % MAX f = 1.8 GHz, VDS = 3.2 V, IDSQ = 700 mA, PIN = 25 dBm, except PIN = 5 dBm for Linear Gain 10 40 TEST CONDITIONS 45 Drain Current mA IGSS Gate-to-Source Leakage Current nA 100 VGS = 5.0 V IDSS Saturated Drain Current (Zero Gate Voltage Drain Current) nA 100 VDS = 6.0 V VTH Gate Threshold Voltage V 1.9 VDS = 3.5 V, IDS = 1 mA gm BVDSS RTH Transconductance S Drain-to-Source Breakdown Voltage V Thermal Resistance 800 1.0 15 °C/W 1.4 1.3 VDS = 3.5 V, IDS = 700 mA 18 IDSS = 10 μA 8 Channel-to-Case Notes: 1. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2. Pin = 5 dBm California Eastern Laboratories NE5520279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS PARAMETERS UNITS RATINGS RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS UNITS TYP MAX VDS Drain Supply Voltage V 15.0 VDS Drain to Source Voltage V 3.0 6.0 VGS Gate Supply Voltage V 5.0 VGS Gate Supply Voltage V 2.0 3.0 ID Drain Current A 0.6 IDS Drain Current1 A 0.8 1.0 ID Drain Current (Pulse Test) A 1.2 PIN Input Power f = 1.8 GHz, VDS = 3.2 V dBm 25 30 2 PT Total Power Dissipation W 12.5 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 s. ORDERING INFORMATION PART NUMBER NE5520279A-T1-A QTY Note: 1. Duty Cycle ≤ 50%, Ton ≤ 1 s. LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz) FREQUENCY (GHz) Zin (Ω) ZOL (Ω) 1 1.8 1.77 −j6.71 1.25 −j5.73 Note: 1. ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power. NE5520279A TYPICAL PERFORMANCE CURVES (TA = 25°C) 25 IDS ηadd 15 20 25 30 50 250 25 0 0 10 75 15 1000 50 500 25 20 25 30 25 4 f = 1.8 GHz ∆f = 1 MHz VDS = 3.2 V IDQ = 700 mA IM3 -40 IM5 -50 -60 -70 10 25 20 15 30 35 Average Two Tone Ouput Power, Pout (dBm) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE Pout ηd 2000 100 1500 75 1000 50 ηadd 25 IDS 500 20 10 15 20 25 Input Power,Pin (dBm) 30 40 0 35 25 0 Output Power, Pout (dBm) 2500 f = 2.00 GHz VDS = 5.0 V IDQ = 300 mA 0 0 Input Power,Pin (dBm) 30 15 250 -30 0 0 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 35 15 3 2 1 0 -20 IMD, (dBc) 1500 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) Ids(mA) 100 ηadd 10 50 15 -10 2000 IDS 20 40 Output Power, Pout (dBm) 2500 ηd 5 500 ηadd 20 IMD vs. TWO TONE OUTPUT POWER Pout 25 10 75 Gate to Source Voltage, Vgs (V) Ids(mA) Output Power, Pout (dBm) 30 750 ηd OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER f = 1.8 GHz VDS = 3.2 V IDQ = 700 mA 100 25 Input Power,Pin (dBm) 35 1000 IDS 35 2500 f = 2.00 GHz VDS = 5.0 V Pin = 27 dBm 30 Pout 2000 100 1500 75 1000 50 500 25 ηd ηadd 25 IDS 20 15 0 1 2 3 Gate to Source Voltage, Vgs (V) 4 0 0 Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 15 10 5 500 30 Pout Ids(mA) 10 75 750 ηd 20 100 1250 f = 1.8 GHz VDS = 3.2 V Pin = 25 dBm Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) 1000 Pout Output Power, Pout (dBm) 30 35 Ids(mA) 1250 f = 1.8 GHz VDS = 3.2 V IDQ = 300 mA Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) Output Power, Pout (dBm) 35 Ids(mA) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER NE5520279A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 0 120˚ j100 90˚ 60˚ S21 150˚ S11 10 25 100 50 30˚ S12 180˚ 0 0˚ S22 -j10 Coordinates in Ohms Frequency in GHz VD = 5.0 V, ID = 400 mA -j100 -j25 -150˚ -30˚ -120˚ -90˚ -j50 NE5520279A VD = 5.0 V, ID = 400 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 S11 MAG 0.885 0.885 0.883 0.885 0.887 0.890 0.895 0.900 0.905 0.911 0.916 0.921 0.924 0.926 0.927 0.929 0.930 0.931 0.935 0.937 0.941 0.944 0.949 0.950 0.955 0.956 0.958 0.957 0.959 0.959 0.962 0.961 0.965 0.967 0.971 S21 ANG -152.5 -166.9 -172.4 -175.6 -177.9 -179.8 178.7 177.3 176.0 174.6 173.6 172.2 171.0 169.9 168.7 167.5 166.3 165.2 164.1 162.9 161.8 160.6 159.5 158.3 157.3 156.3 155.4 154.5 153.8 152.9 152.5 151.5 150.8 150.1 149.6 MAG 11.510 5.882 3.896 2.897 2.278 1.865 1.569 1.346 1.168 1.024 0.911 0.812 0.728 0.655 0.594 0.541 0.494 0.451 0.415 0.384 0.356 0.329 0.305 0.285 0.267 0.248 0.232 0.217 0.204 0.192 0.180 0.170 0.161 0.152 0.144 S12 ANG 98.5 87.7 80.8 75.2 70.1 65.3 60.7 56.5 52.4 48.5 44.7 40.9 37.5 34.1 30.8 27.9 25.1 22.4 19.6 17.1 14.9 12.6 10.2 7.7 5.8 4.0 2.0 0.0 - 1.6 - 3.1 - 4.5 - 6.1 - 7.6 - 8.8 - 10.0 MAG 0.021 0.022 0.022 0.021 0.021 0.020 0.020 0.019 0.018 0.017 0.016 0.015 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.003 -60˚ S22 ANG 10.3 0.2 - 5.2 - 9.2 - 12.9 - 15.7 - 19.3 - 21.8 - 24.5 - 27.2 - 28.8 - 30.8 - 33.3 - 33.9 - 36.0 - 36.6 - 37.3 - 38.5 - 38.5 - 38.8 - 36.9 - 40.8 - 36.6 - 36.0 - 34.6 - 32.7 - 31.4 - 27.2 - 22.0 - 5.2 - 1.3 27.2 56.3 79.5 86.6 MAG 0.830 0.833 0.840 0.849 0.851 0.856 0.861 0.869 0.876 0.882 0.894 0.898 0.903 0.907 0.914 0.921 0.925 0.926 0.930 0.937 0.942 0.941 0.942 0.947 0.952 0.953 0.952 0.954 0.958 0.961 0.960 0.960 0.964 0.965 0.963 ANG -170.1 -175.4 -177.5 -178.5 -179.3 179.9 179.1 178.4 177.9 177.2 176.5 175.5 174.7 173.9 172.9 172.2 171.5 170.7 169.8 169.0 168.5 167.8 167.0 166.0 165.5 164.9 164.2 163.2 162.4 161.9 161.1 160.2 159.4 158.6 157.6 K MAG1 0.03 0.07 0.11 0.14 0.20 0.27 0.30 0.32 0.36 0.39 0.36 0.42 0.47 0.62 0.68 0.76 0.98 1.22 1.35 1.33 1.45 1.74 2.04 2.04 2.04 2.59 3.32 4.54 5.69 5.78 9.71 9.31 9.54 7.96 5.89 (dB) 27.43 24.21 22.51 21.31 20.41 19.66 19.05 18.55 18.12 17.79 17.48 17.21 16.93 16.84 16.65 16.54 16.58 13.67 12.97 12.95 12.62 11.58 11.01 11.00 11.27 10.34 9.53 8.76 8.58 8.26 7.87 7.08 7.19 6.89 6.46 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2 -1 ). When K ≤ 1, MAG is undefined and MSG values are used. MAG = Maximum Available Gain MSG = Maximum Stable Gain MSG = |S21| ,K= |S12| 1 + | ∆ | 2 - |S11| 2 - |S22| 2 2 |S12 S21| , ∆ = S11 S22 - S21 S12 NE5520279A APPLICATION CIRCUIT (2.40-2.48 GHz) P.C.B. LAYOUT (Units in mm) 79A PACKAGE VG VD J3 C3 C9 C11 4.0 J4 C2 C8 C10 1.7 P1 GND 1.0 Gate 0.5 5.9 C12 1.2 Drain C13 IN C5 C6 OU C15 A2 C14 R1 U1 98 J1 C1 J2 C4 RF IN Source RF OUT Through hole φ 0.2 × 33 0.5 0.5 6.1 er=4.2 500855 t=0.028 5.74mm .30mm .63mm J4 J3 +Vd +Vg C13 C11 C9 C2 C3 C10 C8 C12 R1 C1 J1 C5 RF OUTPUT RF INPUT NE5520279A C7 C14 C4 C15 NE5520279A PARTS LIST 1 1 4 2 1 1 1 1 2 1 2 2 2 1 1 1 2 1 SD-500881 TF-100637 MA101J MCR03J200 600S2R7CW 600S2R2BW 600S1R2BW 600S5R6CW 600S3R3CW TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520279A 703401 1250-003 2052-5636-02 FD-500855B J2 C2,C3 R1 C4 C15 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB SCHEMATIC DIAGRAM NE5520279A-EVAL TEST CIRCUIT BLK 2-56 x 3/16 PHILLIPS PAN HEAD CASE 1 100pF CAP MURATA 0603 20 OHM RESISTOR ROHM 0603 2.7pF CAP ATC 0603 2.2pF CAP ATC 0805 1.2pF CAP ATC 0603 5.6pF CAP ATC 0603 3.3pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE S-BAND MODULE FABRICATION DRAWING 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 NE5520279A TYPICAL APPLICATION CIRCUIT PERFORMANCE (TA = 25°C) OUTPUT POWER vs. INPUT POWER -20.0 34 f= 2.44 GHz -20.0 f= 2.44 GHz -20.0 32 -25.0 30 IM3 (dBc) Output Power, POUT (dBm) 36 IM3 vs. OUTPUT POWER 28 26 24 22 20 -30.0 -35.0 -40.0 3.6 V, 300 mA 3.6 V, 300 mA 3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 500 mA 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Input Power, PIN (dBm) -45.0 3.6 V, 500 mA 6.0 V, 300 mA -50.0 -55.0 12 6.0 V, 300 mA 14 16 18 20 22 24 26 28 30 Output Power, POUT (dBm), Each Tone NE5520279A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times VP215 Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 09/03/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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