NCP623 Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control Housed in a Micro8 or QFN6 package, the NCP623 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 VRMS (over 100 Hz to 100 kHz, with a 10 nF bypass capacitor), the NCP623 represents the ideal choice for sensitive circuits, especially in portable applications where noise performance and space are premium. The NCP623 also excels in response time and reacts in less than 25 s when receiving an OFF to ON signal (with no bypass capacitor). Due to a novel concept, the NCP623 accepts output capacitors without any restrictions regarding their Equivalent Series Resistance (ESR) thus offering an obvious versatility for immediate implementation. With a typical DC ripple rejection better than −90 dB (−70 dB @ 1.0 kHz), it naturally shields the downstream electronics against choppy power lines. Additionally, thermal shutdown and short−circuit protection provide the final product with a high degree of ruggedness. http://onsemi.com MARKING DIAGRAMS 8 Micro8 DM SUFFIX CASE 846A XXX AYW 1 1 NCP6 23yy ALYW QFN6, 3X3 MN SUFFIX CASE 488AE 1 Features • Very Low Quiescent Current 170 A (ON, no load), 100 nA XXX yy A L Y W (OFF, no load) • Very Low Dropout Voltage, Typical Value is 137 mV at an Output Current of 100 mA • Very Low Noise with External Bypass Capacitor (10 nF), • • • • • • • • Typically 25 Vrms over 100 Hz to 100 kHz Internal Thermal Shutdown Extremely Tight Line Regulation Typically −90 dB Ripple Rejection −70 dB @ 1.0 kHz Line Transient Response: 1.0 mV for Vin = 3.0 V Extremely Tight Load Regulation, Typically 20 mV at Iout = 150 mA Multiple Output Voltages Available Logic Level ON/OFF Control (TTL−CMOS Compatible) ESR can vary from 0 to 3.0 = Specific Device Code = Voltage Option = Assembly Location = Wafer Lot = Year = Work Week PIN CONNECTIONS Bypass 1 8 VOUT NC 2 7 GND NC 3 6 GND ON/OFF 4 5 VIN Micro8 (Top View) Applications • All Portable Systems, Battery Powered Systems, Cellular Telephones, Radio Control Systems, Toys and Low Voltage Systems VIN 1 6 ON/OFF GND 2 5 GND VOUT 3 4 Bypass QFN6 (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 0 1 Publication Order Number: NCP623/D NCP623 VIN On/Off Thermal Shutdown ON/OFF Band Gap Reference Bypass VOUT * Current Limit * Antisaturation * Protection GND GND Figure 1. NCP623 Block Diagram MAXIMUM RATINGS Rating Power Supply Voltage Power Dissipation and Thermal Resistance Maximum Power Dissipation Case 488AE (QFN6, 3x3) MN Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Case 846A (Micro8) DM Suffix Thermal Resistance, Junction−to−Air Thermal Resistance, Junction−to−Case Operating Ambient Temperature Range Maximum Junction Temperature Storage Temperature Range ESD Protection − Human Body Model Machine Model Symbol Value Unit Vin 12 V PD Internally Limited W °C/W RJA RJC 161 19 RJA RJC 240 105 TA −40 to +85 °C TJmax 150 °C Tstg −60 to +150 °C VESD 2000 200 V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. http://onsemi.com 2 NCP623 ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA = −40°C to +85°C, Max TJ = 150°C) Characteristics Symbol Min Typ Max Unit Input Voltage Range VON/OFF 0 − Vin V ON/OFF Input Current (All versions) VON/OFF = 2.4 V ION/OFF − 2.5 − ON/OFF Input Voltages (All versions) Logic “0”, i.e. OFF State Logic “1”, i.e. ON State VON/OFF − 2.2 − − 0.3 − − 0.1 2.0 − 170 200 − 900 1400 175 210 − 3.23 3.92 4.90 3.3 4.0 5.0 3.37 4.08 5.1 3.18 3.86 4.83 3.3 4.0 5.0 3.42 4.14 5.17 − 2.0 10 − − − 8.0 15 20 25 35 45 − − − 30 137 180 90 230 260 Ripple Rejection (All versions) Vin = Vout + 1.0 V, Vpp = 1.0 V, f = 1.0 kHz, Iout = 60 mA 60 70 − Line Transient Response Vin = Vout + 1.0 V to Vout + 4.0 V, Iout = 60 mA, d(Vin)/dt = 15 mV/s − 1.0 − CONTROL ELECTRICAL CHARACTERISTICS A V CURRENTS PARAMETERS Current Consumption in OFF State (All versions) OFF Mode Current: Vin = Vout + 1.0 V, Iout = 0 mA IQOFF Current Consumption in ON State (All versions) ON Mode Sat Current: Vin = Vout + 1.0 V, Iout = 0 mA IQON Current Consumption in Saturation ON State (All versions) ON Mode Sat Current: Vin = Vout − 0.5 V, Iout = 0 mA IQSAT Current Limit Vin = Vout + 1.0 V, (All versions) Output Short−circuited (Note 1) IMAX Vin = Vout + 1.0 V, TA = 25°C, 1.0 mA < Iout < 150 mA 3.3 Suffix 4.0 Suffix 5.0 Suffix Vout Vin = Vout + 1.0 V, −40°C < TA < 85°C 3.3 Suffix 4.0 Suffix 5.0 Suffix Vout A A A mA V V LINE AND LOAD REGULATION, DROPOUT VOLTAGES Line Regulation (All versions) Vout + 1.0 V < Vin < 12 V, Iout = 60 mA Regline Load Regulation (All versions) Regload Vin = Vout + 1.0 V Iout = 1.0 to 60 mA Iout = 1.0 to 100 mA Iout = 1.0 to 150 mA Dropout Voltage (All versions) mV mV Vin − Vout Iout = 10 mA Iout = 100 mA Iout = 150 mA mV DYNAMIC PARAMETERS dB Output Noise Voltage (All versions) Cout = 1.0 µF, Iout = 60 mA, f = 100 Hz to 100 kHz Cbypass = 10 nF Cbypass = 1.0 nF Cbypass = 0 nF mV µVrms VRMS Output Noise Density Cout = 1.0 µF, Iout = 60 mA, f = 1.0 kHz − − − 25 40 65 − − − − 230 − − − 40 1.1 − − nV/ √Hz VN Output Rise Time (All versions) Cout = 1.0 µF, Iout = 30 mA, VON/OFF = 0 to 2.4 V 1% of ON/OFF Signal to 99% of Nominal Output Voltage Without Bypass Capacitor With Cbypass = 10 nF tr µs ms THERMAL SHUTDOWN Thermal Shutdown (All versions) − 150 − 1. Iout (Output Current) is the measured current when the output voltage drops below 0.3 V with respect to Vout at Iout = 30 mA. http://onsemi.com 3 °C NCP623 DEFINITIONS Maximum Package Power Dissipation − The maximum package power dissipation is the power dissipation level at which the junction temperature reaches its maximum value i.e. 125°C. The junction temperature is rising while the difference between the input power (VCC X ICC) and the output power (Vout X Iout) is increasing. Depending on ambient temperature, it is possible to calculate the maximum power dissipation, maximum load current or maximum input voltage (see Application Hints: Protection). The maximum power dissipation supported by the device is a lot increased when using appropriate application design. Mounting pad configuration on the PCB, the board material and also the ambient temperature are affected the rate of temperature rise. It means that when the IC has good thermal conductivity through PCB, the junction temperature will be “low” even if the power dissipation is great. The thermal resistance of the whole circuit can be evaluated by deliberately activating the thermal shutdown of the circuit (by increasing the output current or raising the input voltage for example). Then you can calculate the power dissipation by subtracting the output power from the input power. All variables are then well known: power dissipation, thermal shutdown temperature (150°C for NCP623) and ambient temperature. Load Regulation − The change in output voltage for a change in load current at constant chip temperature. Dropout Voltage − The input/output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 100 mV below its nominal value (which is measured at 1.0 V differential), dropout voltage is affected by junction temperature, load current and minimum input supply requirements. Output Noise Voltage − The RMS AC voltage at the output with a constant load and no input ripple, measured over a specified frequency range. Maximum Power Dissipation − The maximum total dissipation for which the regulator will operate within specifications. Quiescent Current − Current which is used to operate the regulator chip and is not delivered to the load. Line Regulation − The change in input voltage for a change in the input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Line Transient Response − Typical over− and undershoot response when input voltage is excited with a given slope. Thermal Protection − Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated, typically 150°C, the regulator turns off. This feature is provided to prevent catastrophic failures from accidental overheating. http://onsemi.com 4 NCP623 APPLICATION HINTS Input Decoupling − As with any regulator, it is necessary to reduce the dynamic impedance of the supply rail that feeds the component. A 1.0 F capacitor either ceramic or tantalum is recommended and should be connected close to the NCP623 package. Higher values will correspondingly improve the overall line transient response. Output Decoupling − Due to a novel concept, the NCP623 is a stable component and does not require any Equivalent Series Resistance (ESR) neither a minimum output current. Capacitors exhibiting ESRs ranging from a few m up to 3.0 can thus safely be used. The minimum decoupling value is 1.0 F and can be augmented to fulfill stringent load transient requirements. The regulator accepts ceramic chip capacitors as well as tantalum devices. Noise Performances − Unlike other LDOs, the NCP623 is a true low−noise regulator. With a 10 nF bypass capacitor, it typically reaches the incredible level of 25 VRMS overall noise between 100 Hz and 100 kHz. To give maximum insight on noise specifications, ON Semiconductor includes spectral density graphics as well as noise dependency versus bypass capacitor. The bypass capacitor impacts the start−up phase of the NCP623 as depicted by the data−sheet curves. A typical 1.0 ms settling time is achieved with a 10 nF bypass capacitor. However, due to its low−noise architecture, the NCP623 can operate without bypass and thus offers a typical 20 s start−up phase. In that case, the typical output noise stays lower than 65 VRMS between 100 Hz − 100 kHz. Protections − The NCP623 hosts several protections, conferring natural ruggedness and reliability to the products implementing the component. The output current is internally limited to a minimum of 175 mA while temperature shutdown occurs if the die heats up beyond 150°C. These value lets you assess the maximum differential voltage the device can sustain at a given output current before its protections come into play. The maximum dissipation the package can handle is given by: If a 150 mA output current is needed, the ground current is extracted from the data−sheet curves: 6.5 mA @ 150 mA. For a NCP623NW28R2 (2.8 V), the maximum input voltage will then be 6.48 V, a rather comfortable margin. Typical Application − The following figure portraits the typical application for the NCP623 where both input/output decoupling capacitors appear. C1 10 nF On/Off 6 C3 1.0 F 5 4 C2 1.0 F NCP623 1 2 3 Input Output Figure 2. A Typical NCP623 Application with Recommended Capacitor Values (QFN6) Output Input 8 C2 1.0 F 6 5 C3 1.0 F NCP623 1 C1 10 nF 7 2 3 NC NC 4 On/Off T – T A P max Jmax R JA If TJmax is internally limited to 150°C, then the NCP623 can dissipate up to 595 mW @ 25°C. The power dissipated by the NCP623 can be calculated from the following formula: Figure 3. A Typical NCP623 Application with Recommended Capacitor Values (Micro8) Ptot V I (I ) V Vout I out in gnd out in or Vin max Ptot Vout I out I I out gnd http://onsemi.com 5 NCP623 At power−on, C4 is discharged. When the control logic sends its wake−up signal by going to a high level, the PNP base is momentarily tied to ground. The PNP switch closes and immediately charges the bypass capacitor C1 toward its operating value. After a few s, the PNP opens and becomes totally transparent to the regulator. This circuit improves the response time of the regulator which drops from 1.0 ms down to 30 s. The value of C4 needs to be tweaked in order to avoid any bypass capacitor overload during the wake−up transient. NCP623 Wake−up Improvement − In portable applications, an immediate response to an enable signal is vital. If noise is not of concern, the NCP623 without a bypass capacitor settles in nearly 20 s and typically delivers 65 VRMS between 100 Hz and 100 kHz. In ultra low−noise systems, the designer needs a 10 nF bypass capacitor to decrease the noise down to 25VRMS between 100 Hz and 100 kHz. With the addition of the 10 nF capacitor, the wake−up time expands up to 1.0 ms as shown on the data−sheet curves. If an immediate response is wanted, following figure’s circuit gives a solution to charge the bypass capacitor with the enable signal without degrading the noise response of the NCP623. Input Output C4 470 pF C1 10 nF MMBT2902LT1 Q1 8 R2 220 k On/Off + 6 5 C2 1.0 F 6 5 NCP623 1 4 7 2 3 + 4 On/Off + C3 1.0 F C2 + 1.0 F NCP623 1 2 R2 220 k C1 10 nF 3 MMBT2902LT1 Q1 Input C4 470 pF Output Figure 5. A PNP Transistor Drives the Bypass Pin when Enable Goes High (Micro8) Figure 4. A PNP Transistor Drives the Bypass Pin when Enable Goes High (QFN6) http://onsemi.com 6 C3 1.0 F NCP623 NCP623 Without Wake−up Improvement (Typical Response) 1 ms NCP623 With Wake−up Improvement (Typical Response) 30 s Figure 6. NCP623 Wake−up Improvement with Small PNP Transistor area which reaches a typical noise level of 26 VRMS (100 Hz to 100 kHz) at Iout = 60 mA. The PNP being wired upon the bypass pin, it shall not degrade the noise response of the NCP623. Figure 7 confirms the good behavior of the integrated circuit in this 350 Vin = 3.8 V Vout = 2.8 V Co = 1.0 F Iout = 60 mA Tamb = 25°C nV/sqrt (Hz) 300 250 200 Cbyp = 10 nF 150 100 50 Output Noise = 26 Vrms C = 10 nF @ 100 Hz − 100 kHz 0 100 1,000 10,000 100,000 1,000,000 Frequency (Hz) Figure 7. Noise Density of the NCP623 with a 10 nF Bypass Capacitor and a Wake−up Improvement Network http://onsemi.com 7 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS Ground Current Performances 2.1 GROUND CURRENT (mA) GROUND CURRENT (mA) 7.0 Vin = 3.8 V Vout = 2.8 V CO = 1.0 mF Tamb = 25°C 6.0 5.0 4.0 3.0 2.0 2.05 Vin = 3.8 V Vout = 2.8 V CO = 1.0 F Iout = 60 mA 2.0 1.95 1.9 1.85 1.0 0 0 20 40 60 80 100 120 140 160 180 200 1.8 −40 −20 0 20 40 60 80 OUTPUT CURRENT (mA) AMBIENT TEMPERATURE (°C) Figure 8. Ground Current versus Output Current Figure 9. Ground Current versus Ambient Temperature QUIESCENT CURRENT ON MODE (A) Line Transient Response and Output Voltage 200 190 Y1 180 170 160 Vin = 3.8 to 7.0 V Y1 = 1.0 mV/div Y2 = 1.0 V/div X = 1.0 ms Iout = 60 mA Tamb = 25°C 150 140 130 120 110 100 −40 −20 0 20 40 60 80 dVin = 3.2 V 100 TEMPERATURE (°C) Figure 10. Quiescent Current versus Temperature http://onsemi.com 8 Figure 11. Line Transient Response Y2 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS Load Transient Response versus Load Current Slope Y1 Y2 Vin = 3.8 V Y1 = 100 mV/div Y2 = 20 mV/div X = 200 s/div Tamb = 25°C Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 20 s Tamb = 25°C Y1 Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 12. Iout = 3.0 mA to 150 mA Figure 13. ISlope = 100 mA/s (Large Scale) Iout = 3.0 mA to 150 mA Y1 Y1 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 100 s Tamb = 25°C Y2 Vin = 3.8 V Y1 = 50 mA/div Y2 = 20 mV/div X = 200 s Tamb = 25°C Y2 Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE Figure 14. ISlope = 6.0 mA/s (Large Scale) Iout = 3.0 mA to 150 mA Figure 15. ISlope = 2.0 mA/s (Large Scale) Iout = 3.0 mA to 150 mA http://onsemi.com 9 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS Noise Performances 350 70 250 3.3 nF 200 60 RMS NOISE (A) 0 nF 300 nV/Hz Vin = 3.8 V Vout = 2.8 V CO = 1.0 F Iout = 60 mA Tamb = 23°C Cbyp = 10 nF 150 100 Vn = 65 Vrms @ Cbypass = 0 Vn = 30 Vrms @ Cbypass = 3.3 nF Vn = 25 Vrms @ Cbypass = 10 nF 0 over 100 Hz to 100 kHz 100,000 100 1000 10,000 FREQUENCY (Hz) 50 50 40 30 Vin = 3.8 V Vout = 2.8 V CO = 1.0 F Iout = 60 mA Tamb = 25°C 20 10 0 1,000,000 Figure 16. Noise Density versus Bypass Capacitor 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 BYPASS CAPACITOR (nF) 8.0 9.0 10 Figure 17. RMS Noise versus Bypass Capacitor (100 Hz − 100 kHz) Settling Time Performances 1200 Vin = 3.8 V Vout = 2.8 V CO = 1.0 F Iout = 60 mA Tamb = 25°C SETTLINE TIME (A) 1000 800 600 200 s/div 500 mV/div Cbyp = 10 nF 400 200 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Vin = 3.8 V Vout = 2.8 V Cout = 1.0 F Iout = 50 mA Tamb = 25°C 10 BYPASS CAPACITOR (nF) Figure 18. Output Voltage Settling Time versus Bypass Capacitor 100 s/div 500 mV/div Cbyp = 3.3 nF Figure 19. Output Voltage Settling Shape Cbypass = 10 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 F Iout = 50 mA Tamb = 25°C 10 s/div 500 mV/div Cbyp = 0 nF Figure 20. Output Voltage Settling Shape Cbypass = 3.3 nF Vin = 3.8 V Vout = 2.8 V Cout = 1.0 F Iout = 50 mA Tamb = 25°C Figure 21. Output Voltage Settling Shape without Bypass Capacitor http://onsemi.com 10 NCP623 TYPICAL PERFORMANCE CHARACTERISTICS 250 250 200 200 150 mA 85°C 150 100 mA DROPOUT (mV) DROPOUT (mV) Dropout Voltage 25°C −40°C 100 150 60 mA 100 50 0 50 10 100 60 10 mA 0 −40 150 −20 0 20 40 60 80 100 IO (mA) TEMPERATURE (°C) Figure 22. Dropout Voltage versus Iout Figure 23. Dropout Voltage versus Temperature Output Voltage 2.860 2.805 1 mA 2.840 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 2.800 2.795 60 mA 2.790 100 mA 2.785 150 mA 2.780 2.820 2.800 −40°C 25°C 2.780 85°C 2.760 2.775 2.770 −40 2.740 −20 0 20 40 60 80 0 100 20 40 60 80 100 120 140 TEMPERATURE (°C) OUTPUT CURRENT (mA) Figure 24. Output Voltage versus Temperature Figure 25. Output Voltage versus Iout 160 Ripple Rejection Performances 0 0 −10 Vin = 3.8 V Vout = 2.8 V CO = 1.0 F Iout = 60 mA Tamb = 25°C (dB) −30 −40 −40 (dB) −20 Vin = 3.8 V Vout = 2.8 V CO = 1.0 F Iout = 60 mA Tamb = 25°C −20 −50 −60 −60 −80 −70 −80 −100 −90 −100 −120 100 1000 10,000 100,000 10 100 1000 10,000 100,000 1,000,000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 26. Ripple Rejection versus Frequency with 10 nF Bypass Capacitor Figure 27. Ripple Rejection versus Frequency without Bypass Capacitor http://onsemi.com 11 NCP623 ORDERING INFORMATION ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ Device Version NCP623DM−3.3R2 3.3 V NCP623DM−4.0R2 4.0 V NCP623DM−5.0R2 5.0 V NCP623MN−3.3R2 3.3 V NCP623MN−4.0R2 4.0 V NCP623MN−5.0R2 5.0 V Package Shipping† Micro8 4000 Tape & Reel QFN6, 3x3 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 12 NCP623 PACKAGE DIMENSIONS Micro8 DM SUFFIX CASE 846A−02 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A−01 OBSOLETE, NEW STANDARD 846A−02. −A− −B− K PIN 1 ID G D 8 PL 0.08 (0.003) M T B S A S SEATING −T− PLANE 0.038 (0.0015) C H L J http://onsemi.com 13 DIM A B C D G H J K L MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 −−− 1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75 5.05 0.40 0.70 INCHES MIN MAX 0.114 0.122 0.114 0.122 −−− 0.043 0.010 0.016 0.026 BSC 0.002 0.006 0.005 0.009 0.187 0.199 0.016 0.028 NCP623 PACKAGE DIMENSIONS 6 PIN QFN, 3x3 MN SUFFIX CASE 488AE−01 ISSUE O D 6X B PIN ONE IDENTIFICATION 6X K L Ç Ç Ç Ç Ç Ç 6 E 6X 2X 0.15 C 1 4 0.15 C 2X NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A b TOP VIEW D2 e 3 NOTE 3 0.10 C A B E2 0.05 C BOTTOM VIEW 0.10 C 6X 0.08 C SEATING PLANE A1 ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ DIM A A1 A3 b D D2 E E2 e K L MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.25 2.55 3.00 BSC 1.55 1.85 0.65 BSC 0.20 −−− 0.30 0.50 A (A3) C SIDE VIEW 2.45 0.964 ÇÇÇ ÇÇ ÇÇÇ ÇÇ 3.31 0.130 0.63 0.025 Ç ÇÇ ÇÇ ÇÇÇ ÇÇ Exposed Pad SMD Defined 1.700 0.685 0.35 0.014 0.65 0.025 Micro8 is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 14 For additional information, please contact your local Sales Representative. NCP623/D