EID8596A1-12 UPDATED 07/12/2007 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID8596A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3600mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3600mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3600mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3600mA f = 8.50-9.60GHz MIN TYP MAX UNITS 40.5 41.5 dBm 8.0 9.0 dB ±0.6 dB 35 % Id1dB Drain Current at 1dB Compression f = 8.50-9.60GHz 4000 4600 mA IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 6500 7500 mA VP Pinch-off Voltage VDS = 3 V, IDS = 60 mA -1.2 -2.5 V RTH Thermal Resistance2 2.5 3.0 o C/W Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2007 EID8596A1-12 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET UPDATED 07/12/2007 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -3.0 V IDS Drain Current IDSS IGSF Forward Gate Current PIN Input Power PT Total Power Dissipation 42 W TCH Channel Temperature 150°C TSTG Storage Temperature -65/+150°C 120 mA @ 3dB compression Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 3600mA S11 and S22 0 .4 -0 0. 4 3. 0 10 0 4. 0 -5. 0 0 S21 and S12 (dB) .0 -3 . -4 . 5.0 2 -0. 0.2 -10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 S21 and S12 20 2. 1.0 0.8 6 0. -2 -0 .6 -0.8 -1.0 Swp Max 10GHz DB(|S[2,1]|) * EID8596-12 0 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10.0 DB(|S[1,2]|) * EID8596-12 -10 -10.0 10.0 2 -0. -20 0.2 5.0 -5. 0 4. 0 -3 .0 -30 3. -1.0 8 -2 6 -0.8 6 0.8 1.0 S[2,2] * EID8596-12 0. 0 -0 . 0 0 2. .0 0. 4 -4 . S[1,1] * EID8596-12 .4 -0 8.5 Swp Min 8GHz 9 Frequency (GHz) 9.5 10 FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 8.00 8.25 8.50 8.75 9.00 9.25 9.50 9.75 10.00 10.25 10.50 0.665 0.628 0.575 0.506 0.426 0.343 0.273 0.235 0.223 0.200 0.209 3.042 3.060 3.064 3.146 3.230 3.263 3.280 3.232 3.140 3.023 2.818 0.043 0.048 0.051 0.056 0.060 0.063 0.065 0.066 0.066 0.066 0.063 0.386 0.383 0.405 0.430 0.437 0.410 0.373 0.309 0.235 0.210 0.291 13.310 -10.290 -33.260 -58.660 -88.220 -124.370 -168.710 139.600 86.780 27.440 -47.720 -101.000 -126.890 -151.970 -177.830 154.710 126.660 97.610 67.230 36.090 3.490 -30.940 -143.450 -171.390 165.500 139.920 114.480 87.140 59.430 28.560 -1.380 -36.490 -72.920 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com 175.740 144.740 116.280 91.480 68.710 45.740 21.620 -5.450 -41.240 -95.270 -146.970 page 2 of 4 Revised July 2007 EID8596A1-12 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET UPDATED 07/12/2007 Power De-rating Curve Power Dissipation vs. Temperature 48 Total Power Dissipation (W) 42 36 Potentially Unsafe Operating Region 30 24 Safe Operating Region 18 12 6 0 0 25 50 75 100 Case Temperature (°C) 125 150 Typical Power Data (VDS = 10 V, IDSQ = 3600 mA) P-1dB & G-1dB vs Frequency 43 14 42 13 P-1dB (dBm) 40 12 G-1dB (dB) 39 11 G-1dB (dB) P-1dB (dBm) 41 38 10 37 36 9 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised July 2007 EID8596A1-12 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET UPDATED 07/12/2007 PACKAGE OUTLINE SOURCE Dimensions in inches, Tolerance + .005 unless otherwise specified Excelics .024 EID8596A1-12 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ORDERING INFORMATION Part Number Grade1 fTest (GHz) P1dB (min) EID8596A1-12 Industrial 8.50-9.60 GHz 40.5 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2007