DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION handbook, 2 columns PIN 3 DESCRIPTION 1 base 2 emitter 3 collector Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. 1 2 Top view MBC870 Marking code: E1 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage − − 25 V VCEO collector-emitter voltage − − 15 V IC DC collector current − − 50 mA Ptot total power dissipation up to Ts = 118 °C; note 1 − − 300 mW hFE DC current gain IC = 2 mA; VCE = 1 V 25 90 − fT transition frequency IC = 25 mA; VCE = 5 V − 1.6 − GHz Cc collector capacitance IE = 0; VCB = 10 V; f = 1 MHz − 0.8 1.5 pF Cre feedback capacitance IC = 1 mA; VCE = 5 V; f = 1 MHz − 0.75 − pF Tj junction temperature − − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Ts = 118 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 04 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS UNIT 190 K/W MAX. UNIT up to Ts = 118 °C; note 1 thermal resistance from junction to soldering point Rth j-s VALUE Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. − TYP. − ICBO collector cut-off current hFE DC current gain IC = 2 mA; VCE = 1 V 25 90 − fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz − 1.6 − GHz Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.8 1.5 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF Cre feedback capacitance IB = ib = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 °C − 0.75 − pF F noise figure IC = 2 mA; VCE = 5 V; f = 500 MHz; ΓS = Γopt − 4.5 − dB IE = 0; VCB = 10 V nA MBG237 MLB587 400 10 60 handbook, halfpage handbook, halfpage P tot (mW) hFE 300 40 200 20 100 0 0 0 50 100 150 200 T s ( o C) 10−1 1 10 IC (mA) 102 VCE = 1 V. Fig.3 Fig.2 Power derating curve. 1995 Sep 04 3 DC current gain as a function of collector current; typical values. Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W MBG238 2 MBG239 2.5 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 1.5 2 VCE = 10 V 1 5V 1.5 0.5 1 0 0 2 4 6 8 10 VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 MBG240 20 handbook, halfpage F (dB) 15 10 5 0 10−3 10−2 10−1 1 10 102 103 f (MHz) VCE = 10 V. Fig.6 1995 Sep 04 IC (mA) 102 Tamb = 25 °C; f = 500 MHz. IB = ib = 0; f = 1 MHz. Fig.4 10 1 Minimum noise figure as function of frequency; typical values. 4 Transition frequency as a function of collector current; typical values. Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W PACKAGE OUTLINE 1.00 max handbook, full pagewidth 0.2 M A 0.2 M B 0.1 max 0.4 0.2 0.2 A 3 2.2 2.0 1.35 1.15 1 2 0.3 0.1 1.4 1.2 0.25 0.10 2.2 1.8 B Dimensions in mm. Fig.7 SOT323. 1995 Sep 04 5 MBC871 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 04 6