DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD127 BZA800A-series Quadruple ESD transient voltage suppressor Product data sheet Supersedes data of 2000 May 01 2000 Sep 25 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series FEATURES PINNING • ESD rating >8 kV, according to IEC1000-4-2 PIN DESCRIPTION • SOT353 (SC-88A) surface mount package 1 cathode 1 • Common anode configuration. 2 common anode 3 cathode 2 APPLICATIONS 4 cathode 3 • Computers and peripherals 5 cathode 4 • Audio and video equipment • Communication systems. DESCRIPTION handbook, halfpage5 Monolithic transient voltage suppressor diode in a five lead SOT353 (SC-88A) package for 4-bit wide ESD transient suppression. 4 1 3 2 4 MARKING 5 1 TYPE NUMBER MARKING CODE BZA856A Z1 BZA862A Z2 BZA868A Z3 BZA820A Z4 2000 Sep 25 2 3 MGT580 Fig.1 Simplified outline SOT353 (SC-88A). 2 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Tamb = 25 °C − note 1 mA IF continuous forward current Tamb = 25 °C − 200 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 3.75 A Ptot total power dissipation Tamb = 25 °C − 335 mW PZSM non repetitive peak reverse power dissipation: square pulse; tp = 1 ms; see Fig.3 BZA856A, BZA862A, BZA868A, − 24 W BZA820A − 17 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. DC working current limited by Ptot(max). THERMAL CHARACTERISTICS SYMBOL Rth j-a 2000 Sep 25 PARAMETER CONDITIONS thermal resistance from junction to ambient all diodes loaded 3 VALUE UNIT 370 K/W NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER Cd V BZA856A VR = 3 V − − 2 000 nA BZA862A VR = 4 V − − 700 nA BZA868A VR = 4.3 V − − 200 nA BZA820A VR = 15 V − − 100 nA BZA856A 5.32 5.6 5.88 V BZA862A 5.89 6.2 6.51 V BZA868A 6.46 6.8 7.14 V BZA820A 19 20 21 V BZA856A − − 400 Ω BZA862A − − 300 Ω BZA868A − − 200 Ω BZA820A − − 125 Ω BZA856A − −0.2 − mV/K BZA862A − 1.8 − mV/K BZA868A − 3 − mV/K BZA820A − 16 − mV/K BZA856A − − 240 pF BZA862A − − 200 pF BZA868A − − 180 pF − − 50 pF BZA856A − − 3.2 A BZA862A − − 2.9 A BZA868A − − 2.6 A BZA820A − − 0.6 A working voltage differential resistance temperature coefficient diode capacitance non-repetitive peak reverse current 2000 Sep 25 UNIT 1.3 IZ = 1 mA IZ = 1 mA IZ = 1 mA f = 1 MHz; VR = 0 BZA820A IZSM MAX. − reverse current SZ TYP. − forward voltage IR rdiff MIN. IF = 200 mA VF VZ CONDITIONS tp = 1 ms; Tamb = 25 °C 4 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series MGT583 10 MGT584 102 handbook, halfpage handbook, halfpage BZA856A BZA856A, BZA862A, BZA868A I ZSM (A) PZSM (W) BZA862A BZA820A BZA868A 1 10 BZA820A 10−1 10−2 10−1 1 t p (ms) 1 10−2 10 10−1 1 t p (ms) 10 PZSM = VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. Fig.3 Fig.2 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). Maximum non-repetitive peak reverse current as a function of pulse time. MGT586 MGT585 400 200 Cd handbook, halfpage handbook, halfpage Ptot (mW) (pF) 160 300 120 200 BZA856A 80 BZA862A BZA868A 100 40 BZA820A 0 0 5 10 VR (V) 0 15 0 50 100 Tamb (°C) Tj = 25 °C; f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2000 Sep 25 Fig.5 Power derating curve. 5 150 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor handbook, full pagewidth ESD TESTER RZ 450 Ω BZA800A-series RG 223/U 50 Ω coax CZ 10× ATTENUATOR DIGITIZING OSCILLOSCOPE 50 Ω note 1 1/4 BZA800A IEC 1000-4-2 network CZ = 150 pF; RZ = 330 Ω Note 1: attenuator is only used for open socket high voltage measurements vertical scale = 100 V/div horizontal scale = 50 ns/div BZA820A GND-4 BZA868A GND-3 BZA862A GND-2 BZA856A GND-1 GND unclamped +1 kV ESD voltage waveform (IEC 1000-4-2 network) vertical scale = 10 V/div horizontal scale = 50 ns/div clamped +1 kV ESD voltage waveform (IEC 1000-4-2 network) GND GND vertical scale = 100 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 1000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 1000-4-2 network) Fig.6 ESD clamping test set-up and waveforms. 2000 Sep 25 6 MGT587 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series APPLICATION INFORMATION Typical common anode application A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one package. Two simplified examples are shown in Figs 7 and 8. handbook, full pagewidth keyboard, terminal, printer, etc. A B C D I/O FUNCTIONAL DECODER BZA800A GND MGT581 Fig.7 Computer interface protection. VDD handbook, full pagewidth VGG address bus RAM I/O ROM data bus CPU CLOCK control bus BZA800A GND MGT582 Fig.8 Microprocessor protection. 2000 Sep 25 7 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series Device placement and printed-circuit board layout Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA800A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a minimum. This includes the lead length of the suppression element. In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended: 1. Place the suppression element close to the input terminals or connectors 2. Keep parallel signal paths to a minimum 3. Avoid running protection conductors in parallel with unprotected conductors 4. Minimize all printed-circuit board loop areas including power and ground loops 5. Minimize the length of the transient return path to ground 6. Avoid using shared transient return paths to a common ground point. 2000 Sep 25 8 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series PACKAGE OUTLINE Plastic surface mounted package; 5 leads SOT353 D E B y X A HE 5 v M A 4 Q A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E (2) e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT353 2000 Sep 25 REFERENCES IEC JEDEC EIAJ SC-88A 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet Quadruple ESD transient voltage suppressor BZA800A-series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2000 Sep 25 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp11 Date of release: 2000 Sep 25 Document order number: 9397 750 07142